Henry Wu

Elemental vacancy diffusion database from high-throughput first-principles calculations for fcc and hcp structures

This work demonstrates how databases of diffusion-related properties can be developed from high-throughput ab initio calculations. The formation and migration energies for vacancies of all adequately stable pure elements in both the face-centered cubic (fcc) and hexagonal close packing (hcp) crystal structures were determined using ab initio calculations. For hcp migration, both the basal plane and z-direction nearest-neighbor vacancy hops were considered. Energy barriers were successfully calculated for 49 elements in the fcc structure and 44 elements in the hcp structure. These data were plotted against various elemental properties in order to discover significant correlations. The calculated data show smooth and continuous trends when plotted against Mendeleev numbers. The vacancy formation energies were plotted against cohesive energies to produce linear trends with regressed slopes of 0.317 and 0.323 for the fcc and hcp structures respectively. This result shows the expected increase in vacancy formation energy with stronger bonding. The slope of approximately 0.3, being well below that predicted by a simple fixed bond strength model, is consistent with a reduction in the vacancy formation energy due to many-body effects and relaxation. Vacancy migration barriers are found to increase nearly linearly with increasing stiffness, consistent with the local expansion required to migrate an atom. A simple semi-empirical expression is created to predict the vacancy migration energy from the lattice constant and bulk modulus for fcc systems, yielding estimates with errors of approximately 30%.

High-throughput ab-initio dilute solute diffusion database.

We demonstrate automated generation of diffusion databases from high-throughput density functional theory (DFT) calculations. A total of more than 230 dilute solute diffusion systems in Mg, Al, Cu, Ni, Pd, and Pt host lattices have been determined using multi-frequency diffusion models. We apply a correction method for solute diffusion in alloys using experimental and simulated values of host self-diffusivity. We find good agreement with experimental solute diffusion data, obtaining a weighted activation barrier RMS error of 0.176 eV when excluding magnetic solutes in non-magnetic alloys. The compiled database is the largest collection of consistently calculated ab-initio solute diffusion data in the world.

The MAterials Simulation Toolkit (MAST) for atomistic modeling of defects and diffusion

Abstract The MAterials Simulation Toolkit (MAST) is a workflow manager and post-processing tool for ab initio defect and diffusion workflows. MAST codifies research knowledge and best practices for such workflows, and allows for the generation and management of easily modified and reproducible workflows, where data is stored along with workflow information for data provenance tracking. MAST is available for download through the Python Package Index, or at https://pypi.python.org/pypi/MAST , with installation instructions and a detailed user’s guide at http://pythonhosted.org/MAST . MAST code may be browsed at the GitHub repository at https://github.com/uw-cmg/MAST .

Thermal diffusion boron doping of single-crystal natural diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occurs at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

First-principles investigation on diffusion mechanism of alloying elements in dilute Zr alloys

Abstract Impurity diffusion in Zr is potentially important for many applications of Zr alloys, and in particular for their use of nuclear reactor cladding. However, significant uncertainty presently exists about which elements are vacancy vs. interstitial diffusers, which can inhibit understanding and prediction of their behavior under different temperature, irradiation, and alloying conditions. Therefore, first-principles calculations based on density functional theory (DFT) have been employed to predict the temperature-dependent dilute impurity diffusion coefficients for 14 substitutional alloying elements in hexagonal closed packed (HCP) Zr. Vacancy-mediated diffusion was modeled with the eight-frequency model. Interstitial contributions to diffusion are estimated from interstitial formation and select migration energies. Formation energies for each impurity in nine high-symmetry interstitial sites were determined, including significant effects of thermal expansion. The dominant diffusion mechanism of each solute in HCP Zr was identified in terms of the calculated vacancy-mediated activation energy, lower and upper bounds of interstitial activation energy, and the formation entropy, suggesting a rough relation with the metallic radii of solutes. It is predicted that Cr, Cu, V, Zn, Mo, W, Au, Ag, Al, Nb, Ta and Ti all diffuse predominantly by an interstitial mechanism, while Hf, Zr, and Sn are likely to be predominantly vacancy-mediated diffusers at low temperature and interstitial diffusers at high temperature, although the identification of mechanisms for these elements at high-temperature is quite uncertain.