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Dive into the research topics where Hidekazu Okuhira is active.

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Featured researches published by Hidekazu Okuhira.


Applied Surface Science | 2003

Hydrogen absorption of LaNi5 after LiOD treatment and surface characterization by TOF-SIMS

Chika Izawa; Haru-Hisa Uchida; Hidekazu Okuhira; Yoshitake Nishi

Abstract In the hydrogen absorption reaction, the surface condition is a predominant factor. The surface oxide layer generally prevents the dissociative absorption. Recently we reported the effect of the pretreatment by LiOH, which enhanced the hydrogen absorption even after significant surface oxidations. In this study the surface of LaNi 5 alloy treated with a LiOD solution was analyzed by TOF-SIMS. The reaction mechanism of the accelerated absorption by the alkaline treatment is discussed.


Japanese Journal of Applied Physics | 1993

Quantitative Analysis of Trace Hydrogen in Highly Purified Nitrogen Gas Using Rapid Reactions in Atmospheric Pressure Ionization Mass Spectrometer

Yasuhiro Mitsui; Takashi Irie; Hidekazu Okuhira; Atsushi Saiki

Quantitative analysis of trace hydrogen in highly purified nitrogen gas for the semiconductor fabrication process was investigated using an atmospheric pressure ionization mass spectrometer (APIMS). A previous method wherein the sample gas is directly introduced into the APIMS is not capable of providing high-sensitivity measurements for hydrogen in nitrogen gas. By mixing 20% argon gas with the sample gas, the sensitivity was increased to ten times that of the previous method. This is due to the occurrence of a previously unreported rapid reaction through which the quantity of hydrogen ions is increased: (N2Ar)++H2→N2H++H+Ar. The detection limit in this method and the rate constant for this reaction were estimated to be 40 ppt and 1.4×10-10 molecule-1 cm3 s-1, respectively.


Applied Surface Science | 2003

ToF-SIMS characterization of molecular ions from Fomblin Z-DOL on Ag substrates

Yoshimi Abe; Hidekazu Okuhira

Abstract There is great difficulty to obtain molecular ions from the lubricant actually as films on magnetic recording disks. With the assistance of Ag cationization, quasi-molecular ions of (Ag+M)+ from Fomblin Z-DOL cast on Ag substrate were successfully observed on the positive time-of-flight secondary ion mass spectrometry (ToF-SIMS) spectra. Considering the mass interference between oligomers, detailed distributions of molecular weight (Mn) and monomer ratio (m/n) could be extracted. The average values of Mn and m/n obtained by ToF-SIMS are in good agreement with other conventional technique such as nuclear magnetic resonance spectroscopy (NMR).


Archive | 1986

Method of forming twin doped regions of the same depth by high energy implant

Nobuyoshi Natsuaki; Masao Tamura; Yasuo Wada; Kiyonori Ohyu; Tadashi Suzuki; Hidekazu Okuhira; Akira Shintani; Shoji Syukuri


Archive | 1985

Manufacturing apparatus for semiconductor devices

Hidekazu Okuhira; Yasuo Wada


Archive | 1995

Defect observing electron microscope

Hiroshi Kakibayashi; Hisaya Murakoshi; Hidekazu Okuhira; Takashi Irie; Jiro Tokita; Keiichi Kanehori; Yasuhiro Mitsui


Applied Surface Science | 2003

Estimation of ToF-SIMS information depth in micro-corrosion analysis

Yoshimi Abe; Manabu Komatsu; Hidekazu Okuhira


The Japan Society of Applied Physics | 1990

Patterned Chemical Vapor Deposition of Tungsten Films on Silicon Dioxide

Hidekazu Okuhira; Shigeru Nishimatsu; Ken Ninomiya


Archive | 1988

Equipment for manufacturing semiconductor devices

Yusuke Yajima; Hidekazu Okuhira; Kanji Tsujii; Seiichi Murayama; Akira Shintani; Yasuo Wada


Journal of Advanced Science | 2002

TOF-SIMS surface analysises on LaNi5 after LiOD treatment

Chika Izawa; Yoshitake Nishi; Hidekazu Okuhira; Haru-Hisa Uchida

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