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Featured researches published by Atsushi Saiki.


international electron devices meeting | 1982

Advanced planar metallization with polymer for VLSI

T. Nishida; Atsushi Saiki; Ygshio Homma; Kiichirg Mukai

An advanced planar metallization technology has been developed that makes use of PIQ®(a polyimide type resin from Hitachi Chemical Co.). This technology employs a novel taper control etching approach for fine via holes, a sputter cleaning for low via hole contact resistance, and an A1 RIE for fine metallization patterning. Taper-controlled via holes in thick PIQ film satisfy demands for both minimizing via hole area and maintaining reliable step coverage in overlapping metallization at via hole steps. Appropriate sputter cleaning conditions accomplish low via hole contact resistance, eliminating undesirable influences on the polymer surface. Full use of RIE for both first and second metallization, in combination with taper control etching, provides 5\microm pitch metallization. This technology, because of its excellent planarization and newly developed techniques, is shown to be applicable to highly packed multi-level interconnections for future VLSIs.


Japanese Journal of Applied Physics | 1993

Quantitative Analysis of Trace Hydrogen in Highly Purified Nitrogen Gas Using Rapid Reactions in Atmospheric Pressure Ionization Mass Spectrometer

Yasuhiro Mitsui; Takashi Irie; Hidekazu Okuhira; Atsushi Saiki

Quantitative analysis of trace hydrogen in highly purified nitrogen gas for the semiconductor fabrication process was investigated using an atmospheric pressure ionization mass spectrometer (APIMS). A previous method wherein the sample gas is directly introduced into the APIMS is not capable of providing high-sensitivity measurements for hydrogen in nitrogen gas. By mixing 20% argon gas with the sample gas, the sensitivity was increased to ten times that of the previous method. This is due to the occurrence of a previously unreported rapid reaction through which the quantity of hydrogen ions is increased: (N2Ar)++H2→N2H++H+Ar. The detection limit in this method and the rate constant for this reaction were estimated to be 40 ppt and 1.4×10-10 molecule-1 cm3 s-1, respectively.


international electron devices meeting | 1977

High packing linear integrated circuits using planar metallization with polymer

Kiichiro Mukai; Atsushi Saiki; S. Harada; S. Shoji

A linear IC for the TV chroma systems has been packed on a 2.34×2.36mm2chip using a two-level interconnection with Planar Metallization with Polymer (PMP) technology, and is packaged by plastic direct molding. The chip area of this device is reduced about 40% as compared to the conventional device with the sam function. Advanced PMF technique makes it possible to realize this linear IC with high yields and high reliability. In this technique; (1) Purified PIQ (a high heat resisting polyimide, Na 0.5ppm) is used for insulating layers. (2) A special solution of hydrazine-hydrate has been developed to etch the PIQ layer to form via-holes down to 3×3µm. Yield of via-hole contact proved to be over 99.9998%. (3) PMP makes it possible to place the pads for thermo-compression bonding on the active region of the device. (4) Pinhole density of the PIQ layer is less than 0.05/cm2. Failure of interconnection has not been observed in the reliability test.


Archive | 1972

Method of producing multilayer wiring structure of integrated circuit

Seiki Harada; T Mori; Atsushi Saiki; Kikuji Sato


Archive | 1972

MULTILAYER INTERCONNECTED STRUCTURE FOR SEMICONDUCTOR INTEGRATED CIRCUIT AND PROCESS FOR MANUFACTURING THE SAME

Seiki Harada; T Kohashi; Saburo Nonogaki; Yoichi Oba; Takahiro Okabe; Atsushi Saiki; Kikuji Sato


Archive | 1972

Multilayer wiring structure of integrated circuit and method of producing the same

Seiki Harada; Takahiro Okabe; Atsushi Saiki; Kikuji Sato


Archive | 1973

Isolating protective film for semiconductor devices and method for making the same

Atsushi Saiki; Kikuji Sato; Seiki Harada; Terue Tsunoda; Yoichi Oba


Archive | 1975

Discrete semiconductor device having polymer resin as insulator and method for making the same

Masami Tomono; Akira Abe; Seiki Harada; Kikuji Sato; Takeshi Takagi; Gen-ichi Kamoshita; Yuichiro Oya; Atsushi Saiki


Journal of The Electrochemical Society | 1977

A New Transistor with Two‐Level Metal Electrodes

Atsushi Saiki; Seiki Harada; Toshio Okubo; Kiichiro Mukai; Takeshi Kimura


Archive | 1974

Aluminum oxide layer bonding polymer resin layer to semiconductor device

Atsushi Saiki; Seiki Harada; Yoichi Oba

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