Hidetoshi Arakawa

A three-phase inverter IC for AC220 V with a drastically small chip size and highly intelligent functions

A three-phase inverter IC for a 220-V AC line with highly intelligent functions has been fabricated using new high-voltage devices and a process which is compatible with a conventional 3- mu m CMOS process. This process can greatly reduce the chip size of the IC. Components developed for this inverter IC include a lateral insulated-gate bipolar transistor (LIGBT) with a low on-state voltage, a high-speed and large SOA, and a soft and fast recovery diode (SFD) with a low forward voltage drop and good recovery characteristics. The inverter is a high-voltage power IC of the 550V/1-A class and, when supplied from the 220-V line, can control a brushless motor, using a 20-kHz PWM (pulsewidth modulation) frequency over a wide range of motor rotating speeds.<<ETX>>

A 150 V, 320 MHz, low noise self-aligned double diffused lateral (SADDL) pnp transistor

For realization of complementary transistors needed in high voltage, high speed analog ICs, high voltage, high performances lateral pnp transistors have been developed by utilizing the SADDL transistor structure. The developed lateral pnp transistor has a high h/sub FE/ of l00, high f/sub T/ of 320 MHz and low noise figure of 3 dB in spite of a high BV/sub CEO/ of 150 V. When BV/sub CEO/ of the developed SADDL transistor is 340 V, h/sub FE/ is 50 and f/sub T/ is 120 MHz. These f/sub T/s are about 5 times those of the best conventional lateral pnp transistors with the same BV/sub CEO/, as reported to date.