Himadri S. Majumdar

Application of regioregular polythiophene in spintronic devices: Effect of interface

The authors report on fabrication and characterization of a polymeric spin valve with the conjugated polymer regioregular (poly 3-hexylthiophene) (RRP3HT) as the spacer layer. The device structure is La0.67Sr0.33MnO3 (LSMO)/polymer/Co, with half-metallic, spin-polarized LSMO acting as the spin-injecting electrode. The spin valve shows behavior similar to a magnetic tunnel junction though the nonmagnetic spacer layer (∼100nm) is much thicker than the tunneling limit. They attribute this behavior to the formation of a thin spin-selective tunneling interface between LSMO and RRP3HT caused by RRP3HT, chemically attaching to LSMO as observed by x-ray photoelectron spectroscopy measurement. This gives rise to ∼80% magnetoresistance (MR) at 5K and ∼1.5% MR at room temperature. They found that by introducing monolayer of different organic insulators between LSMO and RRP3HT the spin-selective interface is destroyed and the spin injection is reduced. Their results show that organic materials are promising candidate...

Role of electron-hole pair formation in organic magnetoresistance

Magneto-electrical measurements were performed on diodes and bulk heterojunction solar cells (BHSCs) to clarify the role of formation of coulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR) response in organic thin film devices. BHSCs are suitable model systems because they effectively quench excitons but the probability of forming e-h pairs in them can be tuned over orders of magnitude by the choice of material and solvent in the blend. We have systematically varied the e-h recombination coefficients, which are directly proportional to the probability for the charge carriers to meet in space, and found that a reduced probability of electrons and holes meeting in space lead to disappearance of the MR. Our results clearly show that MR is a direct consequence of e-h pair formation. We also found that the MR line shape follows a power law-dependence of B0.5 at higher fields.

Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

Rapid low-temperature processing of metal-oxide thin film transistors with combined far ultraviolet and thermal annealing

We propose a combined far ultraviolet (FUV) and thermal annealing method of metal-nitrate-based precursor solutions that allows efficient conversion of the precursor to metal-oxide semiconductor (indium zinc oxide, IZO, and indium oxide, In2O3) both at low-temperature and in short processing time. The combined annealing method enables a reduction of more than 100 °C in annealing temperature when compared to thermally annealed reference thin-film transistor (TFT) devices of similar performance. Amorphous IZO films annealed at 250 °C with FUV for 5 min yield enhancement-mode TFTs with saturation mobility of ∼1 cm2/(V·s). Amorphous In2O3 films annealed for 15 min with FUV at temperatures of 180 °C and 200 °C yield TFTs with low-hysteresis and saturation mobility of 3.2 cm2/(V·s) and 7.5 cm2/(V·s), respectively. The precursor condensation process is clarified with x-ray photoelectron spectroscopy measurements. Introducing the FUV irradiation at 160 nm expedites the condensation process via in situ hydroxyl ra...

Effect of La0.67Sr0.33MnO3 electrodes on organic spin valves

We report the effect of La0.7Sr0.3MnO3 (LSMO) electrodes on the temperature dependence of the magnetoresistance (MR) of LSMO/polymer/cobalt spin valves (SVs). LSMO films have been prepared by pulsed laser deposition on three different single crystal substrates using different deposition parameters. The films were characterized for their surface morphologies, structural, magnetic, and magnetotransport properties. Low deposition rate is found to be detrimental for growth of good quality films and polycrystalline films with grain boundary effects are observed in thicker films. The films on MGO (100) substrate show a broad paramagnetic to ferromagnetic transition, accompanied with a metal-insulator transition below room temperature. This indicates growth of some strained structures due to large lattice mismatch (9%) between the substrate and the film and presence of polycrystalline grain boundaries. The deposited films on STO (100) and NGO (001) show much sharper magnetic transition and metallic behavior indi...

Application of Paper-Supported Printed Gold Electrodes for Impedimetric Immunosensor Development

In this article, we report on the formation and mode-of-operation of an affinity biosensor, where alternate layers of biotin/streptavidin/biotinylated-CRP-antigen/anti-CRP antibody are grown on printed gold electrodes on disposable paper-substrates. We have successfully demonstrated and detected the formation of consecutive layers of supra-molecular protein assembly using an electrical (impedimetric) technique. The formation process is also supplemented and verified using conventional surface plasmon resonance (SPR) measurements and surface sensitive characterization techniques, such as X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The article provides a possible biosensor development scheme, where—(1) fabrication of paper substrate (2) synthesis of gold nanoparticle inks (3) inkjet printing of gold electrodes on paper (4) formation of the biorecognition layers on the gold electrodes and (5) electrical (impedimetric) analysis of growth—all are coupled together to form a test-structure for a recyclable and inexpensive point-of-care diagnostic platform.

Organic spin valves: effect of magnetic impurities on the spin transport properties of polymer spacers

We report the effect of magnetic impurities in the spacer layer of polymeric spin valves (PSV) with the sandwich configuration of La0.67Sr0.33MnO3 (LSMO)/ -conjugated polymer regio-random poly(3-hexyl thiophene)/cobalt (Co), showing giant magnetoresistance (GMR) response. Different deposition rates of Co at the top electrode resulted in two types of devices: one with lower device resistance and linear current-voltage (I-V) characteristics and the other with very low inclusion of Co and exhibiting higher device resistance and nonlinear I-V characteristics. We observed an asymmetric dc bias dependence of magnetoresistance (MR) in devices with more Co inclusion, while for the other type of device, bias dependence was more symmetric. At higher bias, %MR of both types of device showed no significant difference (5-10%), but at low dc bias it ranged between 50 and 160% MR. This can be attributed to the higher tunneling probability of spin-polarized carriers from one ferromagnetic electrode to the other. Magnetic tunnel junction-like features are observed in the devices with greater Co inclusions. Anomalous MR peaks were also observed in these devices and their origin was explained in terms of presence of additional scattering centers around the included metal ions and increased spin relaxation due to high magnetic anisotropy in the system. Both types of PSVs showed a monotonic decrease in MR with temperature at high bias currents.

Printed Half-Wave and Full-Wave Rectifier Circuits Based on Organic Diodes

Presently, most circuits fabricated using organic materials and printing methods have been adopted directly from solid-state inorganic electronics. However, the characteristics of organic electronic devices can differ remarkably from their inorganic equivalents, and therefore, the performance assumptions made about inorganic devices may not be applicable in organic electronics. In this paper, we report a printed diode-based half-wave rectifier having high yield, good air stability, and 3.5-V dc output at 13.56 MHz. Due to the high yield and good performance of the individual diodes, fabrication of more complex devices is possible. In order to achieve higher output power and lower ripple voltage, a printed full-wave bridge rectifier is reported. In addition, the half-wave and the full-wave rectifier circuits are consistently compared with each other. The output waveforms, voltages, and power values are presented for both rectifying circuits. The output measurement results show that the full-wave rectifier has lower output power and lower output voltage due to the high voltage drop of the printed diodes. Therefore, the full-wave rectifier would be most useful in low-frequency applications where low ripple voltage or small capacitor area is required.

Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer

Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.

Surface Functionalization of Ion-Sensitive Floating-Gate Field-Effect Transistors With Organic Electronics

Electrically conducting polymers are advantageous hybrid materials for microelectronic biosensors due to their high bandgap sensitivity, possibilities for nanoscale surface area formation, and well-developed surface bioconjugation strategies. In this paper, we investigated whether those organic conductors can also be used to functionalize ion-sensitive floating-gate field-effect transistors (ISFGFETs) designed to measure biological binding events. We first subjected our device to 100% relative humidity (RH) and proved its viability in such a humid environment. Subsequently, we drop-casted viscoelastic polyaniline emeraldine salt on pristine transistors to construct organo-functionalized devices. The modified ISFGFETs were stable in aqueous environments and sensitive to cationic polyethyleneimine. The directions of the ISFGFET threshold voltage (VT) shifts agree with the corresponding open-circuit potential variations for the same reaction and pH-sensitive behaviors of Al2O3 sensing layer on the transistor. Such organo-modified ISFGFET sensor arrays are promising alternatives to traditional conductive polymer-based potentiometric biosensors due to their signal amplification, high throughput, and scalability advantages.