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IEEE Transactions on Components, Hybrids, and Manufacturing Technology | 1986

Pb - Sn Solder for Die Bonding of Silicon Chips

Hirokazu Inoue; Yasutoshi Kurihara; Hiroaki Hachino

The thermal fatigue life of silicon devices die bonded with lead-tin (Pb-Sn) alloys of 14 different compositions, from Pb-3%Sn to Pb-95% Su was investigated. A silver-plated silicon chip and a nickelplated copper substrate were soldered together using a piece of thin foil (100µmt) solder. Soldered silicon devices were exposed to thermal cycling tests of - 55 to 150°C (1 cycle/h). The thermal fatigue life of a device was defined as the number of thermal cycles when the heat resistance of the device reached 1.5 times its original value. The maximum thermal fatigue life was observed for Pb-50%Sn and was about 9 times that for Pb5%Sn. Solder grain growth during the thermal cycling was also observed, and scanning electron microscope (SEM) measurements showed that cracks in the solder propagated selectively in the at (Pb-rich) region.


Archive | 1979

Semiconductor absolute pressure transducer assembly and method

Minoru Takahashi; Takahiko Tanigami; Kaoru Uchiyama; Hitoshi Minorikawa; Motohisa Nishihara; Kanji Kawakami; Seiko Suzuki; Hiroaki Hachino; Yutaka Misawa


Archive | 1979

Semiconductor pressure sensor having plural pressure sensitive diaphragms and method

Seikou Suzuki; Motohisa Nishihara; Kanji Kawakami; Hideo Sato; Shigeyuki Kobori; Hiroaki Hachino; Minoru Takahashi


Archive | 1985

Heat-conducting cooling module

Yasutoshi Kurihara; Tasao Soga; Hiroaki Hachino; Kenji Miyata; Masahiro Okamura; Fumiyuki Kobayashi; Takahiro Daikoku


Archive | 1982

Insulated type semiconductor devices

Yasutoshi Kurihara; Yoshihiro Suzuki; Michio Ooue; Hiroaki Hachino; Mitsuo Yanagi


Archive | 1980

Semiconductor device using SiC as supporter of a semiconductor element

Yasutoshi Kurihara; Hiroaki Hachino; Kousuke Nakamura


Archive | 1978

Method of diffusing aluminum into silicon substrate for manufacturing semiconductor device

Yasuhiro Mochizuki; Hiroaki Hachino; Yutaka Misawa


Archive | 1978

Vapor phase diffusion of aluminum with or without boron

Yasuhiro Mochizuki; Hiroaki Hachino; Yasumichi Yasuda; Yutaka Misawa; Takuzo Ogawa


Archive | 1981

pn Junction device with glass moats and a channel stopper region of greater depth than the base pn junction depth

Yutaka Misawa; Masaaki Takahashi; Hiroaki Hachino


Archive | 1981

Semiconductor device having ribbon electrode structure and method for fabricating the same

Yoko Wakui; Hiroaki Hachino; Mamoru Sawahata; Tasao Soga; Tomio Yasuda; Michio Ooue

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