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Dive into the research topics where Hirofumi Namizaki is active.

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Featured researches published by Hirofumi Namizaki.


international electron devices meeting | 1983

High temperature and long life operation of new InGaAsP/InP 1.3 µm buried crescent lasers

Ryoichi Hirano; Etsuji Oomura; Hideyo Higuchi; Y. Sakakibara; Hirofumi Namizaki; W. Susaki; K. Fujikawa

The main purpose of this study is to realize a highly reliable InP/InGaAsP lasers even at elevated temperatures. We present and demonstrate a new BC structure (displaced BC, D-BC) with optimized device parameters such as the dimensions of the active region and the doping levels of the constituent layers. A stable long life operation for more than 4,000 hours in automatic power control (APC) mode operation at a temperature of 80° C is obtained in these new lasers. The life time of the lasers are estimated to be8 \times 10^{4}hours( ≃ 9 years).


Archive | 1974

PROCESS OF PRODUCING SEMICONDUCTOR LASER DEVICE

Hirofumi Namizaki; Hirofumi Kan


Archive | 1975

Semiconductor luminescent device

Hirofumi Namizaki; Akiko Ito


Archive | 1978

Semiconductor injection laser device

W. Susaki; Hirofumi Namizaki


Archive | 1989

Method of making a buried crescent laser with air gap insulator

E. Omura; Hirofumi Namizaki


Archive | 1985

Method of fabricating buried crescent semiconductor laser device by removing a surface portion of substrate around a groove therein

Hirofumi Namizaki; Y. Sakakibara


Archive | 1985

Semiconductor laser having an active layer buried in a groove

Y. Sakakibara; Hirofumi Namizaki; Etsuji Oomura; Hideyo Higuchi


Archive | 1983

Buried semiconductor laser avoiding thyristor action

Hirofumi Namizaki; Ryoichi Hirano; Hideyo Higuchi; Etsuji Oomura; Y. Sakakibara; W. Susaki


Clinical Nutrition Supplements | 2003

Analysis of grid disconnection effect on I-V characteristics in crystalline Si solar cells

Hirofumi Namizaki; Kimikazu Hazumi; Hiroaki Morikawa; Mitsunori Nakatani; Keisuke Namba


IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology | 1993

1.8-inch poly-Si TFT-LCDs with novel TFT structure and storage capacitance arrangement

Takashi Sugawara; Kazuhiro Kobayashi; Hiroyuki Murai; Christiaan Baert; Takao Sakamoto; Hidetada Tokioka; Yuichi Masutani; Hirofumi Namizaki; Masahiro Nunoshita

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