Y. Sakakibara

Distributed feedback laser diode and module for CATV systems

Harmonic distortion of distributed feedback laser diodes (DFB-LDs) for analog transmission systems is investigated. It is shown that, under a modulation frequency of less than 1 GHz, the harmonic distortion depends on the nonlinearity of the light output power-current (P-I) curve under the continuous wave (CW) condition, which is determined by the coupling constant kappa L, and that the distortion can be minimized at kappa L approximately 1. A 1.3 mu m wavelength InGaAsP DFB-PPIBH (p-substrate partially inverted buried heterostructure) LD and its module, with low distortion by the control of a coupling constant, have been developed. >

InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength

The fabrication procedure, designing of an active region and a p-n-p-n current blocking structure, characteristics and the aging results of an InGaAsP/InP buried crescent (BC) laser diode are described. The BC laser diodes exhibit high laser performances, such as a low-threshold current, a fundamental transverse mode oscillation with linear light output-current characteristics. CW operation at as high as 100°C is achieved with a junction up configuration as a result of the improvement in the current blocking structure. A stable CW operation at 80°C has been realized with a constant optical output power of 5 mW.

Wavelength dependence of characteristics of 1.2-1.55 mu m InGaAsP/InP p-substrate buried crescent laser diodes

Laser diodes with the p-substrate buried-crescent structure have been fabricated for the 1.2-1.55- mu m wavelength region. The dependence of laser characteristics on wavelength has been measured. Up to 70 degrees C, the increasing rates of the threshold current with temperature are similar, while, above 70 degrees C, a shorter-wavelength laser shows a larger increasing rate. At the same full width at half maximum of the far-field pattern perpendicular to the junction plane, the external differential quantum efficiency of the 1.55- mu m laser diode is only 10% smaller than that of the 1.3- mu m laser. The absorption loss coefficients in the active layer of the 1.2-, 1.3-, and 1.55- mu m laser are estimated to be 26, 34, and 73 cm/sup -1/, respectively. >

Extremely narrow spectral linewidth and low chirping of the MQW-DFB-PPIBH laser diode

The low threshold current of 9 mA, the high side-mode suppression ratio of more than 45 dB, the extremely narrow spectral linewidth of 1.1 MHz, and the low chirping of 2.8 AA at -20 dB at 2 Gb/s nonreturn to zero (NRZ) modulation have been achieved in the multiple quantum well (MQW) distributed feedback (DFB) p-substrate partially inverted buried heterostructure (PPIBH) laser diode. The spectral linewidth of 1.1 MHz is the narrowest value among 300- mu m-length solitary laser diodes. These results suggest that the MQW-DFB laser diodes are a promising light source for longer distance and higher bit-rate optical communication systems and coherent optical communication systems. >

Threshold currents of 1.2-1.55 mu m P-substrate buried crescent laser diodes

P-substrate buried crescent (PCB) laser diodes whose wavelength ranged from 1.2 to 1.55 mu m have been fabricated. The threshold currents as low as 10 mA have been obtained in this wavelength range experimentally. The calculated threshold currents of 13, 13, and 14 mA at 1.2, 1.3, and 1.55 mu m almost coincide with the measured values. >

High temperature and long life operation of new InGaAsP/InP 1.3 µm buried crescent lasers

The main purpose of this study is to realize a highly reliable InP/InGaAsP lasers even at elevated temperatures. We present and demonstrate a new BC structure (displaced BC, D-BC) with optimized device parameters such as the dimensions of the active region and the doping levels of the constituent layers. A stable long life operation for more than 4,000 hours in automatic power control (APC) mode operation at a temperature of 80° C is obtained in these new lasers. The life time of the lasers are estimated to be8 \times 10^{4}hours( ≃ 9 years).