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Dive into the research topics where Hirohumi Kasada is active.

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Featured researches published by Hirohumi Kasada.


conference on optoelectronic and microelectronic materials and devices | 2000

Widegap II-VI compound optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells

Tomonori Abe; Hiroshi Yamada; N. Itano; Hirohumi Kasada; Koshi Ando

We report on widegap II-VI compound short wavelength optical modulators of ZnSe/ZnMgSSe asymmetric coupled quantum wells (ACQWs). Effective mass approximated calculations have shown that ZnSe(50/spl Aring/)-ZnMgSSe(30/spl Aring/)-ZnSe(20/spl Aring/) ACQW exhibits weak Stark effect region (<40 kV/cm) and strong Stark effect region (>40 kV/cm). These simulations are experimentally confirmed by a p-i-n structure ACQW modulator grown by molecular beam epitaxy (MBE). The present device exhibits a low reverse bias operation (/spl sim/8 V) with modulation ratio(T/sub on//T/sub off/) of 1.08 at room temperature.


High-power lasers and applications | 1998

Deep defect center characteristics of wide-bandgap II-VI and III-V blue laser materials

Koshi Ando; Tsutomu Yamaguchi; Keiichi Koizumi; Yoshihiro Okuno; Tomoki Abe; Hirohumi Kasada; Akira Ishibashi; Kazushi Nakano; Shuji Nakamura

Microscopic deep defect characteristics of the blue laser materials in the II-VI and III-V wide-bandgap semiconductors have been studied from the view point of the device performance and degradation. The deep defect centers, monitored by transient capacitance spectroscopy technique, have revealed quite different properties in electrical activity, defect density and carrier injection enhanced generation of the defects for the two different wide-bandgap blue laser materials.


International Journal of Infrared and Millimeter Waves | 1994

Very high power line-selective CO2 laser with (line-selective) unstable resonator

Kazuhiko Miyazaki; Hirohumi Kasada; Yusuke Nishigaki; Hideaki Yoshioka; Shingo Nihonmori

By replacing the conventional (non line-selective) unstable resonator, we succeeded in developing the very high power line-selective (line-tunable) CO2 laser as a pumping source for high power molecular gas (e.g.NH3) lasers in the infrared and far-infrared regions.The experiments were performed by using the very high power CO2 laser (4A unit of Lekko VIII) at The Institute of Laser Engineering, Osaka University.The output power of 9R(30)9.22µ m line from the developed CO2 laser, for instance, exceeded 0.5GW/pulse (50J/pulse with pulse width of 100nsec).


Physica Status Solidi B-basic Solid State Physics | 2006

Highly sensitive ultraviolet PIN photodiodes of ZnSSe n+–i–p structure/p+-GaAs substrate grown by MBE

K. Miki; Tomonori Abe; J. Naruse; K. Ikumi; Tsutomu Yamaguchi; Hirohumi Kasada; Koshi Ando


Physica Status Solidi (c) | 2012

Stark effects of ZnO thin film and ZnO/ZnMgO quantum wells

K. Sato; Tomoki Abe; R. Fujinuma; K. Yasuda; Tsutomu Yamaguchi; Hirohumi Kasada; Koshi Ando


The Japan Society of Applied Physics | 2017

Development of Organic-Inorganic Hybrid Structure ZnSe basedUltraviolet APD ~A Durability Examination of operationAPD~

Keita Tanaka; Shigeto Uchida; Takanobu Fujisawa; Tomoki Abe; Hirohumi Kasada; Koshi Ando; Kunio Ichino; Kazuaki Akaiwa


The Japan Society of Applied Physics | 2017

Development of ultraviolet optical modulator using non-polar ZnO/ZnMgO multiple quantum wells

Shohei Iwagashita; Kimura Daiki; Tomoki Abe; Hirohumi Kasada; Koshi Ando; Kunio Ichino; Kazuaki Akaiwa


The Japan Society of Applied Physics | 2017

Conduction control of p-type non-polar a-plane ZnO:N thin films on r-plane sapphire substrates by plasma-asisted molecular beam epitaxy

hirotake nakayama; Koichiro Hukutani; Naoki Maekawa; Tomoki Abe; Hirohumi Kasada; Takashi Ando; Kunio Ichino; Kazuaki Akaiwa


The Japan Society of Applied Physics | 2016

Study of ultraviolet optical modulator using non-polar ZnO/ZnMgO multiple quantum wells

Shohei Iwagashita; Masaya Yamamono; Takuro Kawahara; Tomoki Abe; Hirohumi Kasada; Koshi Ando; Kunio Ichino; Kazuaki Akaiwa


Physica Status Solidi (c) | 2014

Fermi‐level pinning by carrier com‐ pensating midgap donor defect band in homoepitaxially grown p‐type ZnO by MBE

T. Masamoto; K. Noda; T. Maejima; R. Natsume; T. Matsuo; A. Akiyama; T. Yukue; S. Hiroe; Tomoki Abe; Hirohumi Kasada; Y. Harada; Koshi Ando

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