Kazuaki Akaiwa

Molecular Beam Epitaxy and p-type Doping of ZnMgSTe Quaternary Alloys

ZnS-based ZnMgSTe quaternary alloy layers have been grown by molecular beam epitaxy. The bandgap of ZnMgSTe has been estimated from the reflectance spectra, and it was found that it increases with increasing Mg content, while it decreases with increasing Te content. Nitrogen acceptor doping to

MBE Growth and Characterization of Te-doped CuGaS 2 Thin Films

\hbox {Zn}_{1-x}\hbox {Mg}_x\hbox {S}_{1-y}\hbox {Te}_y

Fabrication and Structural Characterization of α-Ga 2 O 3 Thin Films on m-plane Sapphire Substrates by Mist Chemical Vapor Deposition

Zn1-xMgxS1-yTey layers has also been investigated. The layers with Te content

Development of ultraviolet optical modulator using non-polar ZnO/ZnMgO multiple quantum wells

y > 0.1

Conduction control of p-type non-polar a-plane ZnO:N thin films on r-plane sapphire substrates by plasma-asisted molecular beam epitaxy

y>0.1 were found to be p-type, and the layer with the larger Te content exhibited lower resistivity. From these results, it seems that the ZnMgSTe quaternary alloy with appropriate composition possesses both a wide bandgap and p-type conductivity.