Hiroyuki Sekine

Self-referenced poly-Si TFT amplifier readout for a linear image sensor

A readout scheme with thin film transistor (TFT) amplifier is proposed for a linear image sensor. Each pixel is provided with a TFT amplifier and additional TFT circuits which allow self-calibration of the amplifier. Prototype sensors were successfully fabricated by the low-temperature poly-Si process utilizing excimer laser annealing.<<ETX>>

29.3: A 1450-ppi Field-Sequential System-on-Glass LCD Capable of Operating Over a Wide Temperature Range

We succeeded in developing a field-sequential color system-on-glass (SOG) LCD with a twisted-nematic mode using a novel material and novel driving method. We achieved a 4-ms response time and operation over a wide range of temperatures with a 2.1-μm cell gap. High optical efficiency was demonstrated with an aperture ratio of 59% and a 17.5-μm pixel pitch.

L-3: Late-News Paper: A 0.9″ XGA Temperature Poly-Si TFT LCLV with Stacked Storage Capacitor

A 0.9” XGA liquid crystal light valve with low temperature Poly-Si TFT has been developed by using a stacked capacitor structure. The stacked capacitor structure could reduce storage capacitor area because most of the capacitor area is located above the pixel components, such as bus-lines and TFTs. Therefore, this structure could obtain the required storage capacitance without decreasing aperture ratio. A high aperture ratio of 65% and a high contrast ratio of over 500:1 have been achieved with the fabricated light valve.

27.4: A Low Temperature Poly‐Si TFT Liquid Crystal Light Valve (LCLV) with a Novel Light‐Shielding Structure for High Performance Projection Displays

We have successfully achieved a very high contrast ratio of over 700:1 without attaching optical compensation films. This good contrast ratio is much higher than that for commercially available projection displays whose typical contrast ratios are about 400:1. A novel light-shielding structure has been employed in order to realize the excellent performance that has been brought by suppressing low photo leakage current in the TFTs for the LCLVs.