Hiwa Modarresi

Multiferroic BaTiO3–BiFeO3 composite thin films and multilayers: strain engineering and magnetoelectric coupling

BiFeO3 and BaTiO3 were used to grow homogeneous composite thin films and multilayer heterostructures with 15 double layers by pulsed laser deposition. The perpendicular strain of the films was tuned by employing different substrate materials, i.e. SrTiO3(0 0 1), MgO(0 0 1) and MgAl2O4(0 0 1). Multiferroic properties have been measured in a temperature range from room temperature down to 2 K. The composite films show a high ferroelectric saturation polarization of more than 70 µ Cc m −2 . The multilayers show the highest magnetization of 2.3 emu cm −3 , due to interface magnetic moments and exchange coupling of the included weak ferromagnetic phases. The magnetoelectric coupling of the BaTiO3–BiFeO3 films was investigated by two methods. While the ferroelectric hysteresis loops in magnetic fields up to 8 T show only minor changes, a direct longitudinal AC method yields a magnetoelectric coefficient αME = ∂E/∂H of 20.75 V cm −1 Oe −1 with a low µ0HDC of 0.25 T for the 67% BaTiO3–33% BiFeO3 composite film at 300 K. This value is close to the highest reported in the literature.

Effect of rare-earth ion doping on the multiferroic properties of BiFeO3 thin films grown epitaxially on SrTiO3(1 0 0)

High-quality epitaxial Bi1?xRExFeO3 (RE=La, Nd, Gd; x?=?0, 0.05, 0.15) thin films were prepared on SrTiO3(1?0?0) substrates using pulsed laser deposition. X-ray diffraction and RBS-channelling spectroscopy showed that the films are single-phase perovskite, free of additional phases and textured with preferential orientation along the [1?0?0] direction. The dependences of magnetization on temperature and field showed that the films exhibit weak ferromagnetic properties. Among the studied rare-earth doping ions, Bi3+ substitution by Gd3+ most considerably enhanced the ferromagnetic properties. Substitution by La3+ smoothened out the surface morphology, which is important for different potential applications. Both undoped and doped films showed clear ferroelectric response in piezoresponse force microscopy, thus confirming their multiferroic nature. The doping was found to promote a preferential ferroelectric poling of the domains.

Correlation of magnetoelectric coupling in multiferroic BaTiO3-BiFeO3 superlattices with oxygen vacancies and antiphase octahedral rotations

Multiferroic (BaTiO3-BiFeO3) × 15 multilayer heterostructures show high magnetoelectric (ME) coefficients αME up to 24 V/cm·Oe at 300 K. This value is much higher than that of a single-phase BiFeO3 reference film (αME = 4.2 V/cm·Oe). We found clear correlation of ME coefficients with increasing oxygen partial pressure during growth. ME coupling is highest for lower density of oxygen vacancy-related defects. Detailed scanning transmission electron microscopy and selected area electron diffraction microstructural investigations at 300 K revealed antiphase rotations of the oxygen octahedra in the BaTiO3 single layers, which are an additional correlated defect structure of the multilayers.

Magnetic spin structure and magnetoelectric coupling in BiFeO3-BaTiO3 multilayer

Magnetic spin structures in epitaxial BiFeO3 single layer and an epitaxial BaTiO3/BiFeO3 multilayer thin film have been studied by means of nuclear resonant scattering of synchrotron radiation. We demonstrate a spin reorientation in the 15 × [BaTiO3/BiFeO3] multilayer compared to the single BiFeO3 thin film. Whereas in the BiFeO3 film, the net magnetic moment m→ lies in the (1–10) plane, identical to the bulk, m→ in the multilayer points to different polar and azimuthal directions. This spin reorientation indicates that strain and interfaces play a significant role in tuning the magnetic spin order. Furthermore, large difference in the magnetic field dependence of the magnetoelectric coefficient observed between the BiFeO3 single layer and multilayer can be associated with this magnetic spin reorientation.

Induced ferromagnetism and magnetoelectric coupling in ion-beam synthesized BiFeO3–CoFe2O4 nanocomposite thin films

Ferrimagnetic CoFe2O4 (cobalt ferrite) is formed within an epitaxial BiFeO3 (bismuth ferrite) thin film matrix by Co channeled ion implantation and subsequent annealing. The presence of nanoscale CoFe2O4 crystals in the matrix is confirmed by x-ray diffraction using synchrotron radiation. The significantly increased magnetic moment and the low-temperature coercive field of the composite system evidence the formation of ferrimagnetic cobalt ferrite and its nanoscale character, respectively. The results demonstrate that ion beam synthesis is an appropriate method to controllably transform a planar system into a granular one, increasing the interface area between cobalt ferrite and bismuth ferrite. The ferroelectric nature of the BiFeO3–CoFe2O4 composite is confirmed by several scanning probe microscopy techniques. At room temperature, the composite exhibits a magnetoelectric voltage coefficient of α ME = 17.5 V (cm Oe)−1, while a single-phase BiFeO3 thin film shows a α ME value of 4.2 V (cm Oe)−1. The high magnetoelectric voltage coefficient is interpreted to be the result of the interfacial interaction between the ferrimagnetic CoFe2O4 nanocrystallites and the multiferroic BiFeO3 matrix.

Interface induced out-of-plane magnetic anisotropy in magnetoelectric BiFeO3-BaTiO3 superlattices

Room temperature magnetoelectric BiFeO3-BaTiO3 superlattices with strong out-of-plane magnetic anisotropy have been prepared by pulsed laser deposition. We show that the out-of-plane magnetization component increases with the increasing number of double layers. Moreover, the magnetoelectric voltage coefficient can be tuned by varying the number of interfaces, reaching a maximum value of 29 V/cm Oe for the 20×BiFeO3-BaTiO3 superlattice. This enhancement is accompanied by a high degree of perpendicular magnetic anisotropy, making the latter an ideal candidate for the next generation of data storage devices.

Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography

The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally, and magnetically modulated microscale pattern consisting of alternating Co (1.6 µm wide) and Co-CoO (2.4 µm wide) lines has been obtained by oxygen ion implantation into a lithographically masked Au-sandwiched Co thin film. Magnetoresistance along the lines (i.e., current and applied magnetic field are parallel to the lines) reveals an effective positive giant magnetoresistance (GMR) behavior at room temperature. Conversely, anisotropic magnetoresistance and GMR contributions are distinguished at low temperature (i.e., 10 K) since the O-implanted areas become exchange coupled. This planar GMR is principally ascribed to the spatial modulation of coercivity in a spring-magnet-type configuration, which results in 180° Néel extrinsic domain walls at the Co/Co-CoO interfaces. The versatility, in terms of pattern size, morphology, and composition adjustment, of this method offers a unique route to fabricate planar systems for, among others, spintronic research and applications.

Morphology-induced spin frustration in granular BiFeO3 thin films: Origin of the magnetic vertical shift

Pronounced room temperature vertical shifts in the magnetic hysteresis loops of granular, highly polycrystalline and ferromagnetic-like BiFeO3 thin films are observed upon field-cooling from a temperature above the Neel temperature of bulk BiFeO3. This is ascribed to the interplay between the preferential alignment, established by the field-cooling process, of the net magnetic moment, which arises from uncompensated antiferromagnetic spins, and the pinning of a fraction of these spins at the particle boundaries. Conversely, field-cooling of an epitaxially grown BiFeO3 film results in no vertical shift, confirming the effective role played by the particle boundaries (i.e., morphology) of the granular-like BiFeO3 films in the process of spin frustration.Pronounced room temperature vertical shifts in the magnetic hysteresis loops of granular, highly polycrystalline and ferromagnetic-like BiFeO3 thin films are observed upon field-cooling from a temperature above the Neel temperature of bulk BiFeO3. This is ascribed to the interplay between the preferential alignment, established by the field-cooling process, of the net magnetic moment, which arises from uncompensated antiferromagnetic spins, and the pinning of a fraction of these spins at the particle boundaries. Conversely, field-cooling of an epitaxially grown BiFeO3 film results in no vertical shift, confirming the effective role played by the particle boundaries (i.e., morphology) of the granular-like BiFeO3 films in the process of spin frustration.