Ho-Min Kang

P‐8: a‐Si:H TFT‐LCD with Single Organic Passivation Layer

A novel photosensitive organic material is used as the single organic passivation layer for the conventional back channel etched thin film transistors. We find that the leakage current of the a-Si:H TFTs with single organic passivation layer is lower than that of the conventional transistors with silicon nitride passivation layers and the adhesion strength between the organic layers and the pixel electrode is sufficiently strong so that the overlap between the ITO pixel electrode and the data lines can be formed. Using the novel materials, 1.9″ qCIF AMLCD with single organic passivation layer was successfully fabricated with reduced process steps.