Holger Thierschmann

Three-terminal energy harvester with coupled quantum dots

Rectification of thermal fluctuations in mesoscopic conductors is the key idea behind recent attempts to build nanoscale thermoelectric energy harvesters to convert heat into useful electric power. So far, most concepts have made use of the Seebeck effect in a two-terminal geometry, where heat and charge are both carried by the same particles. Here, we experimentally demonstrate the working principle of a new kind of energy harvester, proposed recently, using two capacitively coupled quantum dots. We show that, due to the novel three-terminal design of our device, which spatially separates the heat reservoir from the conductor circuit, the directions of charge and heat flow become decoupled. This enables us to manipulate the direction of the generated charge current by means of external gate voltages while leaving the direction of heat flow unaffected. Our results pave the way for a new generation of multi-terminal nanoscale heat engines.

Spatial conductivity mapping of unprotected and capped black phosphorus using microwave microscopy

Thin layers of black phosphorus present an ideal combination of a 2D material with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which involves water, oxygen and light. We have measured the spatial profile of the conductivity on flakes of black phosphorus as a function of time using scanning microwave impedance microscopy. A microwave excitation (3 GHz) allows to image a conducting sample even when covered with a dielectric layer. We observe that on bare black phosphorus, the conductivity changes drastically over the whole surface within a day. We demonstrate that the degradation process is slowed down considerably by covering the material with a 10 nm layer of hafnium oxide. It is stable for more than a week, opening up a route towards stable black phosphorus devices in which the high dielectric constant of hafnium oxide can be exploited. Covering black phosphorus with a 15 nm boron nitride flake changes the degradation process qualitatively, it is dominated by the edges of the flake indicating a diffusive process and happens on the scale of days.

Thermal gating of charge currents with Coulomb coupled quantum dots

We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), whilst the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.

Thermoelectrics with Coulomb-coupled quantum dots

Abstract In this article we review the thermoelectric properties of three terminal devices with Coulomb-coupled quantum dots (QDs) as observed in recent experiments [1] , [2] . The system we consider consists of two Coulomb-blockade QDs, one of which can exchange electrons with only a single reservoir (heat reservoir), while the other dot is tunnel coupled with two reservoirs at a lower temperature (conductor). The heat reservoir and the conductor interact only via the Coulomb coupling of the quantum dots. It has been found that two regimes have to be considered. In the first one, the heat flow between the two systems is small. In this regime, thermally driven occupation fluctuations of the hot QD modify the transport properties of the conductor system. This leads to an effect called thermal gating. Experiments have shown how this can be used to control charge flow in the conductor by means of temperature in a remote reservoir. We further substantiate the observations with model calculations, and implications for the realisation of an all-thermal transistor are discussed. In the second regime, the heat flow between the two systems is relevant. Here the system works as a nanoscale heat engine, as proposed recently (Sanchez and Buttiker [3] ). We review the conceptual idea, its experimental realisation and the novel features arising in this new kind of thermoelectric device such as decoupling of heat and charge flow.

All-thermal transistor based on stochastic switching

Fluctuations are strong in mesoscopic systems and have to be taken into account for the description of transport. We show that they can even be used as a resource for the operation of a system as a device. We use the physics of single-electron tunneling to propose a bipartite device working as a thermal transistor. Charge and heat currents in a two-terminal conductor can be gated by thermal fluctuations from a third terminal to which it is capacitively coupled. The gate system can act as a switch that injects neither charge nor energy into the conductor, hence achieving huge amplification factors. Nonthermal properties of the tunneling electrons can be exploited to operate the device with no energy consumption.

Single-electron thermal devices coupled to a mesoscopic gate

We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron-electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations.

Transport regimes of a split gate superconducting quantum point contact in the two-dimensional LaAlO 3 /SrTiO 3 superfluid

One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel with certain transmission coefficients. It has been a long standing goal to achieve similar experimental conditions also in superconductors, only reached in atomic scale mechanically tunable break junctions of conventional superconducting metals, but here the Fermi wavelength is so short that it leads to a mixing of quantum transport with atomic orbital physics. Here we demonstrate for the first time the formation of a superconducting quantum point contact (SQPC) with split gate technology in a superconductor, utilizing the unique gate tunability of the two dimensional superfluid at the LaAlO3/SrTiO3 (LAO/STO) interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: (i) SQPC for which the supercurrent is carried only by a few quantum transport channels. (ii) Superconducting island strongly coupled to the equilibrium reservoirs. (iii) Charge island with a discrete spectrum weakly coupled to the reservoirs. Our experiments demonstrate the feasibility of a new generation of mesoscopic all-superconductor quantum transport devices.One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact in GaAs/AlGaAs heterostructures. Being formed with split gate technology, these structures represent in an ideal manner equilibrium reservoirs which are connected only through a few electron mode channel. It has been a long standing goal to achieve similar experimental conditions also in superconductors. Here we demonstrate the formation of a superconducting quantum point contact (SQPC) with split gate technology in a two-dimensional superconductor, utilizing the unique gate tunability of the superfluid at the LaAlO3/SrTiO3 interface. When the constriction is tuned through the action of metallic split gates we identify three regimes of transport: First, SQPC for which the supercurrent is carried only by a few quantum transport channels. Second, superconducting island strongly coupled to the equilibrium reservoirs. Third, charge island with a discrete spectrum weakly coupled to the reservoirs.Quantum transport in superconductors remains difficult to study due to the typically small Fermi wavelength. Here, Thierschmann et al. demonstrate a superconducting quantum point contact with split gate technology at the superconducting LaAlO3/SrTiO3 interface and, due to its two-dimensionality, identify three regimes of quantum transport.

Performance of THz Components Based on Microstrip PECVD SiNx Technology

We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μm-thin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and −26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiNx, which yields 5.9. We estimate the wafer–to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit −12-dB transmission to the coupled port and −26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiNx), we observe losses below 4 dB/mm. The thin SiNx dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.