Holger Winkler

Synthesis of InxGa1-xN solid solutions

Abstract For the growth of group-III nitride thin films as well as GaN and AlN bulk phases precursors are widely used. Here, we introduce bulk phases of pure GaN, InN and solid solutions of InxGa1–xN synthesized by pyrolysis of molecular precursors in ammonia atmosphere. The dimeric [M(NMe2)3]2 (M = Al, Ga) is an oftentimes discussed precursor for conversion into group-III nitrides, while the other here presented gallium and indium amide derivatives have not been reported as appropriate precursors in literature so far. The given molecular structure of the precursors lead to a homogeneous distribution of Gallium and Indium on the cation positions in the solid solutions. GaN and InN and their solid solutions crystallizing in the wurtzite structure type follow Vegard’s law and therefore the lattice constant a0 gives a hint about the degree of cations substitution in the structure. For the investigations of the synthesized bulk phases XRD, SEM and TEM coupled with EDX were used.