Homan B. Yuen

Prospects for epitaxial c-Er 2 O 3 as a CMOS-compatible lasing material

The emission of high-Q c-Er₂O₃ resonators displays little inhomogeneous broadening, robust vacuum-Rabi splitting, and strong upconversion. Considering these effects and a rate-equation model, we analyze the prospects for optically pumped on-chip lasing using c-Er₂O₃.

Towards a monolithically-integrated electrically-pumped Si light emitter technology using epitaxial erbium oxide

We present epitaxial erbium oxide films on Si as a potential light emitter technology for integration with CMOS electronics. These films offer strong photoluminescence and can be integrated into heterostructures for providing photodetection and electroluminescence.

c-Er 2 O 3 Microdisks on Silicon: Fabrication and Photoluminescence

Microdisks are fabricated from c-Er₂O₃. Surface scattering presently limits the quality of whispering-gallery modes around the 980 nm and 1480 nm Er³⁺ pump bands. Photoluminescence is observed at 1550 nm while resonantly pumping cavity modes.