Homayoon Haddad

Carbon doping effects on hot electron trapping

The injection of hot electrons in submicrometer MOS devices constitutes a serious limitation on the application and reliability of these devices. It is shown that carbon doping can significantly reduce or delay this ageing process and the shifts of threshold voltages of MOS transistors with time. Carbon doping has been achieved by both using carbon-doped substrates and by ion implantation of carbon.<<ETX>>

Pipeline defects in CMOS MOSFET devices caused by SWAMI isolation

A pipeline defect which became a leakage path between source and drain in an n-channel MOSFET was identified. It was found that a 20-second Wright-etch will clearly delineate the pipe. The cause of the pipeline was the improper SWAMI (side wall masked isolation) etch which generated stress at the island corners. This stress generated high density dislocation lines which made vacancies readily available for enhanced phosphorus diffusion.<<ETX>>