Hong-Bae Kim

Structure and Multiferroic Properties of V-doped Bi6Fe2Ti3O18 Thin Films Prepared by Chemical Solution Deposition

Pure Bi6Fe2Ti3O18 and vanadium (V) doped Bi6Fe2Ti3O18 (Bi5.99Fe2Ti2.75V0.03O18) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by a chemical solution deposition method. The Bi5.99Fe2Ti2.75V0.03O18 thin film exhibited improved electrical and multiferroic properties, such as leakage current densities, dielectric properties, ferroelectric and ferromagnetic properties. We consider that the improved properties might be related to the reduced concentration of oxygen vacancies and the decreased mobility of oxygen vacancies by V doping.

The Characteristic Changes of Amorphous-InGaZnO Thin Film according to RF Power

We have studied the optical and electrical properties of a-IGZO thin films on the n-type semiconductor fabricated by RF magnetron sputtering method. The ceramic target was used in which , and ZnO powder were mixed with 1:1:2 mol% ratio and furnished. The RF power was set at 25 W, 50 W, 75 W and 100 W as a variable process condition. The transmittance of the films in the visible range was above 80%, and it was 92% in the case of 25 W power. AFM analysis showed that the roughness increased as increasing RF power, and XRD showed amorphous structure of the films without any peak. The films are electrically characterized by high mobility above 10 at low RF power, high carrier concentration and low resistivity. It is required to study further finding the optimal process condition such as lowering the RF power, prolonging the deposition ratio and qualification analysis.

Properties of Dielectric Constant and Bonding Mode of Annealed SiOCH Thin Film

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O- bonding group and Si- bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant and also be reduced further by decreasing the group density and increasing Si-O-Si(C) group density through annealing process.

An Inspection of Stability for Annealing SiOCH Thin Flim

The low dielectric SiOCH films were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 to 60 sccm by 2 sccm step into reaction chamber but with the constant flow rate of 60 sccm . SiOCH thin films were annealed at for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed large reduction of the maximum capacitance yielding low dielectric constant owing to reductions of surface charge density. After exposure at room temperature and atmospheric pressure, dielectric constant of SiOCH films was totally increased. However, annealed SiOCH thin films were more stable than as-deposited SiOCH thin films for natural oxidation.

Properties of SiOCH Thin Film Bonding Mode by BTMSM/O 2 Flow Rates

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in , Si-O-Si and Si- bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O- bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode open link mode cage link mode .

Effects of Lanthanide Ion Doping on Structures and Electrical Properties of Chemical Solution Deposited Bi5FeTi3O15 Thin Films

Pure Bi5FeTi3O15 and its doped compounds, such as Bi4.15La0.75FeTi3O15 and Bi4.15Nd0.85FeTi3O15 thin films, were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The crystalline structures and the surface morphologies of the thin films were identified by using an X-ray diffractometry, a Raman spectroscopy, and a scanning electron microscopy. In addition, the comprehensive electrical properties of the thin films, such as ferroelectric hysteresis loops and leakage current densities, were characterized by using a precision materials analyzer and an electrometer at room temperature, respectively.

Properties of SiOCH Thin Film Dielectric Constant by BTMSM/O 2 Flow Rates

We have Manufactured the low-k dielectric interlayer fabricated by plasma enhanced chemical vapor deposition (PECVD), The thin film of SiOCH is studied correlation between components and Dielectric constant. The precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant measuring C-V. Then compare respectively. ILD of BTMSM/ could have low dielectric constant about , and react sensitively. Also dielectric constant could be decreased by the effects of decreasing and growing Si-O-Si(C) after annealing process.