Hong-Bo Sun

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study”

Presents corrections to the paper, “Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study,” (Chen, N.-K.), IEEE Trans. Nanotechnol., vol. 17, no. 1, pp. 140–146, Jan. 2018.

Clarification of the Molecular Doping Mechanism in Organic Single‐Crystalline Semiconductors and their Application in Color‐Tunable Light‐Emitting Devices

Organic single-crystalline semiconductors with long-range periodic order have attracted much attention for potential applications in electronic and optoelectronic devices due to their high carrier mobility, highly thermal stability, and low impurity content. Molecular doping has been proposed as a valuable strategy for improving the performance of organic semiconductors and semiconductor-based devices. However, a fundamental understanding of the inherent doping mechanism is still a key challenge impeding its practical application. In this study, solid evidence for the perfect substitutional doping mechanism of the stacking mode between the guest and host molecules in organic single-crystalline semiconductors using polarized photoluminescence spectrum measurements and first-principles calculations is provided. The molecular host-guest doping is further exploited for efficient color-tunable and even white organic single-crystal-based light-emitting devices by controlling the doping concentration. The clarification of the molecular doping mechanism in organic single-crystalline semiconductor host-guest system paves the way for their practical application in high-performance electronic and optoelectronic devices.