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Featured researches published by Xue-Peng Wang.


IEEE Transactions on Nanotechnology | 2018

Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study”

Nian-Ke Chen; Xian-Bin Li; Xue-Peng Wang; Sheng-Yi Xie; Wei Quan Tian; Shengbai Zhang; Hong-Bo Sun

Presents corrections to the paper, “Metal–insulator transition ofGe–Sb–Te superlattice: An electron counting model study,” (Chen, N.-K.), IEEE Trans. Nanotechnol., vol. 17, no. 1, pp. 140–146, Jan. 2018.


Quality Assurance and Safety of Crops & Foods | 2017

Sorption equilibrium moisture and isosteric heat of Chinese wheat flours

Xiaoxia Han; Xue-Peng Wang; X.-J. Li; P. Jiang

Data on equilibrium moisture content (EMC) for six Chinese wheat flour varieties were collected by a gravimetric method at 11-96% equilibrium relative humidity (ERH) and a temperature range of 10-35 °C. Six models were fitted to the sorption data, with the modified Guggenheim Anderson deBoer equation, modified Henderson equation (MHE), and a polynomial equation being the best fits. At a constant ERH, the EMC was negatively correlated with temperature, whereas there was a strong effect of temperature on the sorption isotherms of the wheat flours. Initially, the isosteric heats of adsorption for the wheat flours decreased rapidly with increasing sample moisture content (MC); however, when MC was higher than 15% of the wet basis, further increases in MC caused a slight decrease in heat adsorption values. The heat of vaporisation of the wheat flours approached the latent heat of pure water at a moisture content of ~17.5% wet basis, which was ~2,500 kJ/kg. The isosteric heat of sorption values of the wheat flo...


non volatile memory technology symposium | 2015

Origin of high data retention for Ge1Cu2Te3 phase-change memory

Nian-Ke Chen; Xue-Peng Wang; Xian-Bin Li

To meet the high-temperature applications of the phase change memory, Ge1Cu2Te3 (GCT) has been proposed to be a suitable candidate due to its good amorphous stability. Here, we investigate the basic atomic bonding mechanism by first-principles calculations to understand this. The amorphous GCT has significant chemical disorder with large amounts of homopolar bonds. Cage-like clusters (composed of 3-fold rings) are mainly related to Cu atoms. The bonding mechanism in crystalline GCT is proposed and demonstrated by the nonequivalent sp3 hybridization with Te lone-pair electrons. In contrast, amorphous GCT requires Cu d electrons to participate in bonding due to the isolation of Te lone-pair electrons. Thus, the vast difference in atomic and electronic structures between the amorphous and crystalline phase makes the good amorphous stability for high data retention.


Acta Materialia | 2015

Origin of high thermal stability of amorphous Ge 1 Cu 2 Te 3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization

Nian-Ke Chen; Xian-Bin Li; Xue-Peng Wang; Mengjiao Xia; Sheng-Yi Xie; Hai-Yu Wang; Zhitang Song; Shengbai Zhang; Hong-Bo Sun


Advanced Functional Materials | 2017

Highly Efficient Three Primary Color Organic Single‐Crystal Light‐Emitting Devices with Balanced Carrier Injection and Transport

Ran Ding; Jing Feng; Feng-Xi Dong; Wei Zhou; Yang Liu; Xu-Lin Zhang; Xue-Peng Wang; Hong-Hua Fang; Bin Xu; Xian-Bin Li; Hai-Yu Wang; Shu Hotta; Hong-Bo Sun


Physical Chemistry Chemical Physics | 2014

Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles

Xue-Peng Wang; Nian-Ke Chen; Xian-Bin Li; Yan Cheng; X. Q. Liu; Meng-Jiao Xia; Zhitang Song; Xiaodong Han; S. B. Zhang; Hong-Bo Sun


Acta Materialia | 2018

Strong electron-polarized atom chain in amorphous phase-change memory GeSbTe alloy

Nian-Ke Chen; Xian-Bin Li; Xue-Peng Wang; Wei Quan Tian; Shengbai Zhang; Hong-Bo Sun


Acta Materialia | 2017

Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory

Xue-Peng Wang; Xian-Bin Li; Nian-Ke Chen; Qi-Dai Chen; Xiaodong Han; Shengbai Zhang; Hong-Bo Sun


Physical Chemistry Chemical Physics | 2018

Electric field analyses on monolayer semiconductors: the example of InSe

Xue-Peng Wang; Xian-Bin Li; Nian-Ke Chen; Ji-Hong Zhao; Qi-Dai Chen; Hong-Bo Sun


IEEE Transactions on Nanotechnology | 2018

Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study

Nian-Ke Chen; Xian-Bin Li; Xue-Peng Wang; Sheng-Yi Xie; Wei Quan Tian; Shengbai Zhang; Hong-Bo Sun

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Shengbai Zhang

Rensselaer Polytechnic Institute

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Xiaodong Han

Beijing University of Technology

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