Hongjun Hei

ON THE USE OF Mo/Mo2C GRADIENT INTERLAYERS IN DIAMOND DEPOSITION ONTO CEMENTED CARBIDE SUBSTRATES

Molybdenum/molybdenum carbide (Mo/Mo2C) gradient interlayers were prepared via double glow plasma surface alloying (DGPSA) technique onto cemented carbide (WC–Co) substrates for diamond deposition. The morphologies, phase composition and adhesion of the interlayers were investigated, as well as their effect on the subsequent diamond deposition. The results indicated that the Mo/Mo2C gradient interlayer deposited on WC–Co substrate was composed of 4.0-μm-thick diffusion layer and 2.7-μm-thick deposition layer. The Mo concentration decreased gradually with the depth direction whereas the Co and W concentrations increased. As a result, the Co binder phase was completely restricted within the substrate by the diffusion layer. The presence of gradient diffusion layer ensured excellent adhesion of the interlayer. Subsequently, nanocrystalline diamond coatings with excellent adhesion were deposited on the interlayered substrates. Thus, the Mo/Mo2C gradient interlayers deposited via DGPSA technique were demonstrated as a novel option for depositing adherent diamond coatings on WC–Co substrates.

Influence of power density on high purity 63 mm diameter polycrystalline diamond deposition inside a 2.45 GHz MPCVD reactor

63 mm diameter polycrystalline diamond (PCD) films were synthesized via a microwave plasma chemical vapor deposition (MPCVD) reactor in 99% H2–1% CH4 atmosphere. Two different conditions, i.e. the typical condition (input power of 5 kW and gas pressure of 13 kPa) and the high power density condition (input power of 10 kW and gas pressure of 18 kPa), were employed for diamond depositions. The color changes of the plasma under the two proposed conditions with and without methane were observed by photographs. Likewise, the concentrations of hydrogen atoms and carbon active chemical species in plasma were analyzed by optical emission spectroscopy (OES). The morphologies and purity of the PCD films were investigated by scanning electron microscopy (SEM) and Raman spectroscopy, respectively. Finally, the transmission spectrum of the polished PCD plates was characterized by a UV–Vis–NIR spectrometer. Experimental results showed that both the concentrations of hydrogen atoms and carbon radicals increased obviously, with the boost input power and higher pressure. The films synthesized under the high power density condition displayed higher purity and more uniform thickness. The growth rates in 10 kW and 18 kPa reached ~7.7 µm h−1, approximately 6.5 times as much as that occurred in the typical process. Moreover, the polished plates synthesized under the high power density condition possessed a relatively high optical transmittance (~69%), approaching the theoretical values of approximately 71.4% in IR. These results indicate that the purity and growth rate of big-area PCD films could be simultaneously increased with power density.

Effect of Substrate Temperature on Tantalum Carbides Interlayers Synthesized onto WC-Co Substrates for Adherent Diamond Deposition

Tantalum carbides (TaXC) interlayers have been synthesized by double glow plasma surface alloying (DG-PSA) method at different temperature for subsequent deposition of diamond coatings. The evolution of the microstructures, phase composition and adhesion of the interlayers dependent on substrate temperature has been discussed. The results show that the layers are composed of TaXC (i.e. Ta2C, TaC) with nanocrystalline microstructure and small amounts of CoTa2. The layer produced at 700∘C is formed of specific flower-shaped rings embedded in smooth structures. As the temperature increases to 800∘C, interacted rings are covered the full surface, and the surface roughness is increased. As the temperature increases further, the rings are replaced by irregular-shaped pits, caused a decreasing surface roughness. Besides the special microstructure with interactional rings and relatively high roughness, the layer prepared at 800∘C possesses higher adhesion, better wear performance and higher hardness than those of...

Synthesis Of Graphene/Diamond Double-Layered Structure For Improving Electron Field Emission Properties

Ultrananocrystalline diamond (UNCD) films on silicon were prepared by microwave plasma chemical vapor deposition (MPCVD) method using argon-rich CH4/H2/Ar plasmas. The graphene sheets synthesized by chemical vapor deposition (CVD) were successfully transferred on to the UNCD surface to fabricate electron field emission (EFE) property-enhanced graphene/UNCD films. The surface morphology, structure and composition of the graphene/UNCD double-layered structures were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectroscopy and grazing incidence X-ray diffraction (GXRD). GXRD clearly shows the characteristic diffraction peaks of both diamond and graphene. The Raman spectrum shows the characteristic band of diamond at 1332cm−1 and D, G and 2D bands of graphene at 1360, 1550 and 2610cm−1, respectively. The EFE behavior of the composite films can be turned on at E0=2.2V/μm, attaining a current density of 0.065mA/cm2 at an applied field of 7.3V/μm.

Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing

Cu ion implantation and subsequent rapid annealing at 500°C in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V−1 S−1 for microcrystalline diamond (MCD) films. Its electrical field emission behavior can be turned on at E0 = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/μm. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron microscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.