Hongki Min

Intrinsic and Rashba spin-orbit interactions in graphene sheets

Starting from a microscopic tight-binding model and using second-order perturbation theory, we derive explicit expressions for the intrinsic and Rashba spin-orbit interaction induced gaps in the Dirac-like low-energy band structure of an isolated graphene sheet. The Rashba interaction parameter is first order in the atomic carbon spin-orbit coupling strength

Ab initio theory of gate induced gaps in graphene bilayers

\ensuremath{\xi}

Room-temperature superfluidity in graphene bilayers

and first order in the external electric field

Band structure of ABC-stacked graphene trilayers

E

Pseudospin Magnetism in Graphene

perpendicular to the graphene plane, whereas the intrinsic spin-orbit interaction which survives at

Energy gaps, magnetism, and electric-field effects in bilayer graphene nanoribbons

E=0

High-resolution tunnelling spectroscopy of a graphene quartet

is second order in

Chiral decomposition in the electronic structure of graphene multilayers

\ensuremath{\xi}

Charge and spin hall conductivity in metallic graphene

. The spin-orbit terms in the low-energy effective Hamiltonian have the form proposed recently by Kane and Mele. Ab initio electronic structure calculations were performed as a partial check on the validity of the tight-binding model.

Origin of Universal Optical Conductivity and Optical Stacking Sequence Identification in Multilayer Graphene

We study the gate-voltage induced gap that occurs in graphene bilayers using ab initio density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the ab initio calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.