E. H. Hwang

Electronic transport in two-dimensional graphene

We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures. A salient feature of our review is a critical comparison between carrier transport in graphene and in two-dimensional semiconductor systems (e.g. heterostructures, quantum wells, inversion layers) so that the unique features of graphene electronic properties arising from its gap- less, massless, chiral Dirac spectrum are highlighted. Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. Although the emphasis of the review is on those aspects of graphene transport where reasonable consensus exists in the literature, open questions are discussed as well. Various physical mechanisms controlling transport are described in depth including long- range charged impurity scattering, screening, short-range defect scattering, phonon scattering, many-body effects, Klein tunneling, minimum conductivity at the Dirac point, electron-hole puddle formation, p-n junctions, localization, percolation, quantum-classical crossover, midgap states, quantum Hall effects, and other phenomena.

Dielectric function, screening, and plasmons in two-dimensional graphene

The dynamical dielectric function of two-dimensional graphene at arbitrary wave vector

Carrier Transport in Two-Dimensional Graphene Layers

q

A self-consistent theory for graphene transport

and frequency

Measurement of scattering rate and minimum conductivity in graphene.

ensuremath{omega}

Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

,

Temperature-dependent magnetization in diluted magnetic semiconductors

ϵ(q,ensuremath{omega})

Transport in chemically doped graphene in the presence of adsorbed molecules

, is calculated in the self-consistent-field approximation. The results are used to find the dispersion of the plasmon mode and the electrostatic screening of the Coulomb interaction in two-dimensional (2D) graphene layer within the random-phase approximation. At long wavelengths

Screening-induced temperature-dependent transport in two-dimensional graphene

(qensuremath{rightarrow}0)

CHARGED IMPURITY-SCATTERING-LIMITED LOW-TEMPERATURE RESISTIVITY OF LOW-DENSITY SILICON INVERSION LAYERS

, the plasmon dispersion shows the local classical behavior