Hongxing Tang

Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications

Scanning probe microscopies (SPM) and cantilever-based sensors generally use low-frequency mechanical devices of microscale dimensions or larger. Almost universally, off-chip methods are used to sense displacement in these devices, but this approach is not suitable for nanoscale devices. Nanoscale mechanical sensors offer a greatly enhanced performance that is unattainable with microscale devices. Here we describe the fabrication and operation of self-sensing nanocantilevers with fundamental mechanical resonances up to very high frequencies (VHF). These devices use integrated electronic displacement transducers based on piezoresistive thin metal films, permitting straightforward and optimal nanodevice readout. This non-optical transduction enables applications requiring previously inaccessible sensitivity and bandwidth, such as fast SPM and VHF force sensing. Detection of 127 MHz cantilever vibrations is demonstrated with a thermomechanical-noise-limited displacement sensitivity of 39 fm Hz(-1/2). Our smallest devices, with dimensions approaching the mean free path at atmospheric pressure, maintain high resonance quality factors in ambient conditions. This enables chemisorption measurements in air at room temperature, with unprecedented mass resolution less than 1 attogram (10(-18) g).

Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Nanomechanical Measurement of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

Electrical transport across an individual magnetic domain wall in (Ga,Mn)As microdevices

Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be measurably altered by the presence of this single entity. To elucidate these observations we develop a simple model for the electrical potential distribution along a multiterminal device in the presence of a single DW. This is employed to calculate the effect of a single DW upon the longitudinal and transverse resistance. The model provides very good agreement with experimental observations, and serves to highlight important deviations from simple theory. We show that measurements of transverse resistance along the channel permits establishing the position and the shape of the DW contained within it. An experimental scheme is developed that enables unambiguous extraction of the intrinsic DW resistivity. This permits the intrinsic contribution to be differentiated from resistivities originating from the bulk and from magnetic anisotropy—effects that are generally manifested as large backgrounds in the experiments.

Magnetotransport properties of strained Ga0.95Mn0.05As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory

The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinal resistance in compressively strained Ga0.95Mn0.05As epilayers were measured down to temperatures as low as 30 mK. Below temperatures of 3 K, the conductivity decreases [proportional]T^1/3 over 2 orders of magnitude in temperature. The conductivity can be well described within the framework of a three-dimensional scaling theory of Andersons transition in the presence of spin scattering in semiconductors. It is shown that the samples are on the metallic side but very close to the metal-insulator transition. At lowest temperatures, a decrease in the AMR effect is observed, which is assigned to changes in the coupling between the remaining itinerant carriers and the local Mn 5/2-spin moments.

Domain-wall dynamics at micropatterned constrictions in ferromagnetic (Ga,Mn)As epilayers

The influence of sub-µm geometric constrictions on 90° magnetic domain-wall nucleation and propagation in stripes of ferromagnetic (Ga0.95,Mn0.05)As was explored. Measurements of the magnetic switching behavior were performed during ramping of an external magnetic field at constant rate and at constant field in the time domain. Demagnetizing fields are found to play a crucial role in the switching behavior around the region of the constriction. Depending on the samples initial magnetization the constriction can either assist domain-wall nucleation or hinder its propagation.

Magnetotransport and magnetocrystalline anisotropy in Ga1−xMnxAs epilayers

We present an analysis of the magnetic anisotropy in epitaxial Ga1-xMnxAs thin films through electrical transport measurements on multiterminal microdevices. The film magnetization is manipulated in 3D space by a three-axis vector magnet. Anomalous switching patterns are observed in both longitudinal and transverse resistance data. In transverse geometry in particular we observe strong interplay between the anomalous Hall effect and the giant planar Hall effect. This allows direct electrical characterization of magnetic transitions in the 3D space. These transitions reflect a competition between cubic magnetic anisotropy and an effective out-of-plane uniaxial anisotropy, with a reversal mechanism that is distinct from the in-plane magnetization. The uniaxial anisotropy field is directly calculated with high precision and compared with theoretical predictions.