X. M. H. Huang

Ultrasensitive nanoelectromechanical mass detection

We describe the application of nanoelectromechanical systems (NEMS) to ultrasensitive mass detection. In these experiments, a modulated flux of atoms was adsorbed upon the surface of a 32.8 MHz NEMS resonator within an ultrahigh-vacuum environment. The mass-induced resonance frequency shifts by these adsorbates were then measured to ascertain a mass sensitivity of 2.53×10^–18 g. In these initial measurements, this sensitivity is limited by the noise in the NEMS displacement transducer; the ultimate limits of the technique are set by fundamental phase noise processes. Our results and analysis indicate that mass sensing of individual molecules will be realizable with optimized NEMS devices.

Nanoelectromechanical systems: Nanodevice motion at microwave frequencies

It has been almost forgotten that the first computers envisaged by Charles Babbage in the early 1800s were mechanical and not electronic, but the development of high-frequency nanoelectromechanical systems is now promising a range of new applications, including sensitive mechanical charge detectors and mechanical devices for high-frequency signal processing, biological imaging and quantum measurement. Here we describe the construction of nanodevices that will operate with fundamental frequencies in the previously inaccessible microwave range (greater than 1 gigahertz). This achievement represents a significant advance in the quest for extremely high-frequency nanoelectromechanical systems.

Nanowire-based very-high-frequency electromechanical resonator

Fabrication and readout of devices with progressively smaller size, ultimately down to the molecular scale, is critical for the development of very-high-frequency nanoelectromechanical systems (NEMS). Nanomaterials, such as carbon nanotubes or nanowires, offer immense prospects as active elements for these applications. We report the fabrication and measurement of a platinum nanowire resonator, 43 nm in diameter and 1.3 μm in length. This device, among the smallest NEMS reported, has a fundamental vibration frequency of 105.3 MHz, with a quality factor of 8500 at 4 K. Its resonant motion is transduced by a technique that is well suited to ultrasmall mechanical structures.

Monocrystalline silicon carbide nanoelectromechanical systems

SiC is an extremely promising material for nanoelectromechanical systems given its large Youngs modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators.

VHF, UHF and microwave frequency nanomechanical resonators

Nanomechanical resonators with fundamental mode resonance frequencies in the very-high frequency (VHF), ultra-high frequency (UHF) and microwave L-band ranges are fabricated from monocystalline silicon carbide (SiC) thin film material, and measured by magnetomotive transduction, combined with a balanced-bridge readout circuit. For resonators made from the same film, we measured the frequency dependence (thus geometry dependence) of the quality factor. We have seen a steady decrease of quality factor as the frequency goes up. This indicates the importance of clamping losses in this regime. To study this source of dissipation, a free-free beam SiC nanomechanical resonator has been co-fabricated on the same chip with a doubly clamped beam resonator operating at similar frequencies. Device testing has been performed to directly compare their characteristics and performance. It is observed that a significant improvement in quality factor is attained from the free-free beam design. In addition, from studies of resonators made from different chips with varying surface roughness, we found a strong correlation between surface roughness of the SiC thin film material and the quality factor of the resonators made from it. Furthermore, we experimentally studied the eddy current damping effect in the context of magnetomotive transduction. A high-aspect ratio SiC nanowire resonator is fabricated and tested for this study. Understanding the dissipation mechanisms, and thus improving the quality factor of these resonators, is important for implementing applications promised by these devices.

Balanced electronic detection of displacement in nanoelectromechanical systems

We describe a broadband radio frequency balanced bridge technique for electronic detection of displacement in nanoelectromechanical systems (NEMS). With its two-port actuation-detection configuration, this approach generates a background-nulled electromotive force in a dc magnetic field that is proportional to the displacement of the NEMS resonator. We demonstrate the effectiveness of the technique by detecting small impedance changes originating from NEMS electromechanical resonances that are accompanied by large static background impedances at very high frequencies. This technique allows the study of important experimental systems such as doped semiconductor NEMS and may provide benefits to other high frequency displacement transduction circuits.

Two-dimensional electron-gas actuation and transduction for GaAs nanoelectromechanical systems

We have fabricated doubly clamped beams from GaAs/AlGaAs quantum-well heterostructures containing a high-mobility two-dimensional electron gas (2DEG). Applying an rf drive to in-plane side gates excites the beams mechanical resonance through a dipole–dipole mechanism. Sensitive high-frequency displacement transduction is achieved by measuring the ac emf developed across the 2DEG in the presence of a constant dc sense current. The high mobility of the incorporated 2DEG provides low-noise, low-power, and high-gain electromechanical displacement sensing through combined piezoelectric and piezoresistive mechanisms.

Free-free beam silicon carbide nanomechanical resonators

A free-free beam silicon carbide nanomechanical resonator has been co-fabricated on the same chip with a doubly-clamped beam resonator operating at similar frequencies. Device testing has been performed to directly compare their properties. A significant improvement in quality factor is observed for the free-free beam design.

Fabrication of Suspended Nanomechanical Structures from Bulk 6H-SiC Substrates

In order to fabricate nanoscale mechanical devices from high-quality 6H-SiC wafers, a tilted ECR etching technique has been developed that eliminates the need for a buried sacrificial layer. The method applies an anisotropic ECR etch from three different angles relative to the wafer surface in order to pattern and release free-standing structures. Suspended nano-scale, doubly clamped beam resonators have been made as an initial demonstration of this new fabrication method. These beams are the first such structures to be surface nanomachined from 6H-SiC wafers. The availability of 3-dimensional suspended nanostructures from 6H-SiC has opened up the possibility to integrate microwave-frequency nanomechanical devices with SiC-based electronics, and thus significantly broaden the application scope of SiC nanoelectromechanical systems.

Quality factor issues in silicon carbide nanomechanical resonators

Nanomechanical resonators with fundamental mode resonance frequencies in the Very-High Frequency (VHF), Ultra-High Frequency (UHF) range and microwave L-band are fabricated from monocrystalline silicon carbide thin film material, and measured by magnetomotive transduction, combined with a balanced bridge read out circuit. For resonators made from the same film, we measured the frequency (i.e., geometry) dependence of the quality factor. It is found that the quality factor of these resonators decreases when the frequency increases. This indicates the importance of clamping loss in this regime. In addition, from studies of resonators made from different chips with varying surface roughness, we found a strong correlation between surface roughness of the silicon carbide thin film material and the quality factor of the resonators made from it. Understanding the dissipation mechanisms, and thus improving the quality factor of these resonators, is important for implementing applications promised by these devices.