Hongzhuo Wu

High performance thin film transistors based on bi-thieno[3,4-c]pyrrole-4,6-dione-containing copolymers: tuning the face-on and edge-on packing orientations

Bi-thieno[3,4-c]pyrrole-4,6-dione (bi-TPD) and oligothiophene copolymer semiconductors P1–P4, with different alkyl side chain densities and orientations, were synthesized. Their physicochemical properties were systematically characterized. With trimethoxy(octadecyl)silane (OTMS) modified SiO2 as substrates, the as-spun thin films of P1, P3 and P4 adopted the face-on packing structure while the P2 films displayed the edge-on packing arrangement. The packing differences of P1–P4 were ascribed to their different alkyl chain densities and orientations. The higher alkyl chain density is favorable to the face-on packing structure. After thermal annealing, the packing orientation of P2 remained and the packing structures of P1, P3 and P4 changed. P1 and P4 based films exhibited the coexistence of the edge-on and face-on packing structures in which the edge-on structure was predominant, and P3 based thin films were converted to the edge-on packing arrangement. The relationship between the aggregation structures and charge carrier transport properties of these films was explored through thin film transistors. All devices exhibited p-channel behavior with a maximum mobility larger than 1.0 cm2 V−1 s−1. Interestingly, the P3 films with face-on packing structures displayed a high mobility up to 1.18 cm2 V−1 s−1 (average mobility of 1.02 cm2 V−1 s−1), very close to the edge-on packed films which showed a maximum mobility of 1.4 cm2 V−1 s−1 (average mobility of 1.16 cm2 V−1 s−1). These results demonstrated, similar to edge-on packing structures, the face-on packing arrangement with π–π interactions facilitated charge carrier transport.

Modulating Surface Morphology and Thin-Film Transistor Performance of Bi-thieno[3,4-c]pyrrole-4,6-dione-Based Polymer Semiconductor by Altering Preaggregation in Solution

Due to their strong intermolecular interactions, polymer semiconductors aggregate in solution even at elevated temperature. With the aim to study the effect of this kind preaggregation on the order of thin films and further transistor performance, bi-thieno[3,4-c]pyrrole-4,6-dione and fluorinated oligothiophene copolymerized polymer semiconductor P1, which shows strong temperature-dependent aggregation behavior in solution, is synthesized. Its films are deposited through a temperature-controlled dip-coating technique. X-ray diffraction and atomic force microscopy results reveal that the aggregation behavior of P1 in solution affects the microstructures and order of P1 films. The charge transport properties of P1 films are investigated with bottom-gate top-contacted thin-film transistors. The variation of device performance (from 0.014 to 1.03 cm2 V–1 s–1) demonstrates the importance of optimizing preaggregation degree. The correlation between preaggregation degree and transistor performance of P1 films is explored.

Cu–Thienoquinone Charge-Transfer Complex: Synthesis, Characterization, and Application in Organic Transistors

A facile and unusual reaction between thienoquinone compound QDTBDT2C and copper is reported. The formation of Cu-QDTBDT2C complex is proved by absorption spectra, IR spectra, Raman spectra, and X-ray photoelectron spectroscopy data. This complex can serve as a doping layer at the interface of Cu/QDTBDT2C and greatly improve the performance of organic transistors in which the copper electrode is source/drain electrodes and QDTBDT2C is an active layer. The transistors display an electron mobility of 0.95 cm2 V-1 s-1, to our knowledge, the highest electron mobility reported for copper electrode-based n-type transistors and nearly two times higher than that of the Au electrode-based devices. These results demonstrate the potential applications of Cu-QDTBDT2C complex in organic electronics, and the unique properties of QDTBDT2C (spontaneously reacting with copper) provide a new insight into the design of n-type organic semiconductors for copper electrode-based organic transistors.