Honore Djieutedjeu

Pb7Bi4Se13: A Lillianite Homologue with Promising Thermoelectric Properties

Pb(7)Bi(4)Se(13) crystallizes in the monoclinic space group C2/m (No. 12) with a = 13.991(3) Å, b = 4.262(2) Å, c = 23.432(5) Å, and β = 98.3(3)° at 300 K. In its three-dimensional structure, two NaCl-type layers A and B with respective thicknesses N(1) = 5 and N(2) = 4 [N = number of edge-sharing (Pb/Bi)Se6 octahedra along the central diagonal] are arranged along the c axis in such a way that the bridging monocapped trigonal prisms, PbSe7, are located on a pseudomirror plane parallel to (001). This complex atomic-scale structure results in a remarkably low thermal conductivity (∼0.33 W m(-1) K(-1) at 300 K). Electronic structure calculations and diffuse-reflectance measurements indicate that Pb(7)Bi(4)Se(13) is a narrow-gap semiconductor with an indirect band gap of 0.23 eV. Multiple peaks and valleys were observed near the band edges, suggesting that Pb(7)Bi(4)Se(13) is a promising compound for both n- and p-type doping. Electronic-transport data on the as-grown material reveal an n-type degenerate semiconducting behavior with a large thermopower (∼-160 μV K(-1) at 300 K) and a relatively low electrical resistivity. The inherently low thermal conductivity of Pb(7)Bi(4)Se(13) and its tunable electronic properties point to a high thermoelectric figure of merit for properly optimized samples.

Chemical Manipulation of Magnetic Ordering in Mn1–xSnxBi2Se4 Solid–Solutions

Several compositions of manganese-tin-bismuth selenide solid-solution series, Mn(1-x)Sn(x)Bi(2)Se(4) (x = 0, 0.3, 0.75), were synthesized by combining high purity elements in the desired ratio at moderate temperatures. X-ray single crystal studies of a Mn-rich composition (x = 0) and a Mn-poor phase (x = 0.75) at 100 and 300 K revealed that the compounds crystallize isostructurally in the monoclinic space group C2/m (no.12) and adopt the MnSb(2)Se(4) structure type. Direct current (DC) magnetic susceptibility measurements in the temperature range from 2 to 300 K indicated that the dominant magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solutions below 50 K switches from antiferromagnetic (AFM) for MnBi(2)Se(4) (x = 0), to ferromagnetic (FM) for Mn(0.7)Sn(0.3)Bi(2)Se(4) (x = 0.3), and finally to paramagnetic (PM) for Mn(0.25)Sn(0.75)Bi(2)Se(4) (x = 0.75). We show that this striking variation in the nature of magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solution series can be rationalized by taking into account: (1) changes in the distribution of magnetic centers within the structure arising from the Mn to Sn substitutions, (2) the contributions of spin-polarized free charge carriers resulting from the intermixing of Mn and Sn within the same crystallographic site, and (3) a possible long-range ordering of Mn and Sn atoms within individual {M}(n)Se(4n+2) single chain leading to quasi isolated {MnSe(6)} octahedra spaced by nonmagnetic {SnSe(6)} octahedra.

Coexistence of high-Tc ferromagnetism and n-type electrical conductivity in FeBi2Se4

The discovery of n-type ferromagnetic semiconductors (n-FMSs) exhibiting high electrical conductivity and Curie temperature (Tc) above 300 K would dramatically improve semiconductor spintronics and pave the way for the fabrication of spin-based semiconducting devices. However, the realization of high-Tc n-FMSs and p-FMSs in conventional high-symmetry semiconductors has proven extremely difficult due to the strongly coupled and interacting magnetic and semiconducting sublattices. Here we show that decoupling the two functional sublattices in the low-symmetry semiconductor FeBi2Se4 enables unprecedented coexistence of high n-type electrical conduction and ferromagnetism with Tc ≈ 450 K. The structure of FeBi2Se4 consists of well-ordered magnetic sublattices built of [FenSe4n+2]∞ single-chain edge-sharing octahedra, coherently embedded within the three-dimensional Bi-rich semiconducting framework. Magnetotransport data reveal a negative magnetoresistance, indicating spin-polarization of itinerant conducting electrons. These findings demonstrate that decoupling magnetic and semiconducting sublattices allows access to high-Tc n- and p-FMSs as well as helps unveil the mechanism of carrier-mediated ferromagnetism in spintronic materials.

Donor and acceptor impurity-driven switching of magnetic ordering in MnSb2−xSnxSe4

The ability to manipulate the electronic structure of the low-dimensional magnetic semiconductor MnSb2Se4via isomorphic Sn/Sb substitutions enables independent investigation of the interactions of free carriers with localized magnetic moments and their effects on the predominant magnetic ordering in the p-type MnSb2−xSnxSe4 (0 ≤ x ≤ 0.25) semiconductors. We find a large increase in the electrical resistivity and thermopower with increasing Sn content suggesting a surprising decrease in the overall hole density. X-ray photoelectron spectroscopy reveals that Sn atoms enter the structure in the 2+ oxidation state, whereas a fraction of the remaining Sb3+ partially oxidizes to Sb5+ to maintain the electroneutrality of the compound. Therefore, we attribute the drop in the hole density to electron–hole compensation processes. Interestingly, magnetic susceptibility data reveal a remarkable switching of the dominant magnetic interaction from antiferromagnetism (AFM) (x = 0) to ferromagnetism (FM) with Tc ∼ 56 K for 0.05 ≤ x ≤ 0.15 samples and a reversal to AFM ordering for x > 0.15. The Sn-dependent FM interaction in MnSb2−xSnxSe4 is rationalized within the context of the formation of overlapping bound magnetic polarons (BMPs) through the interactions between the added electrons/holes and localized moments of Mn2+ magnetic ions.

Crystal Structure and Thermoelectric Properties of the 7,7L Lillianite Homologue Pb6Bi2Se9

Pb6Bi2Se9, the selenium analogue of heyrovsyite, crystallizes in the orthorhombic space group Cmcm (#63) with a = 4.257(1) Å, b = 14.105(3) Å, and c = 32.412(7) Å at 300 K. Its crystal structure consists of two NaCl-type layers, A and B, with equal thickness, N1 = N2 = 7, where N is the number of edge-sharing [Pb/Bi]Se6 octahedra along the central diagonal. In the crystal structure, adjacent layers are arranged along the c-axis such that bridging bicapped trigonal prisms, PbSe8, are located on a pseudomirror plane parallel to (001). Therefore, Pb6Bi2Se9 corresponds to a 7,7L member of the lillianite homologous series. Electronic transport measurements indicate that the compound is a heavily doped narrow band gap n-type semiconductor, with electrical conductivity and thermopower values of 350 S/cm and -53 μV/K at 300 K. Interestingly, the compound exhibits a moderately low thermal conductivity, ∼1.1 W/mK, in the whole temperature range, owing to its complex crystal structure, which enables strong phonon scattering at the twin boundaries between adjacent NaCl-type layers A and B. The dimensionless figure of merit, ZT, increases with temperature to 0.25 at 673 K.

Geometrical spin frustration and ferromagnetic ordering in (MnxPb2-x)Pb2Sb4Se10.

Engineering the atomic structure of an inorganic semiconductor to create isolated one-dimensional (1D) magnetic subunits that are embedded within the semiconducting crystal lattice can enable chemical and electronic manipulation of magnetic ordering within the magnetic domains, paving the way for (1) the investigation of new physical phenomena such as the interactions between electron transport and localized magnetic moments at the atomic scale and (2) the design and fabrication of geometrically frustrated magnetic materials featuring cooperative long-range ordering with large magnetic moments. We report the design, synthesis, crystal structure and magnetic behavior of (MnxPb2-x)Pb2Sb4Se10, a family of three-dimensional manganese-bearing main-group metal selenides featuring quasi-isolated [(MnxPb2-x)3Se30]∞ hexanuclear magnetic ladders coherently embedded and uniformly distributed within a purely inorganic semiconducting framework, [Pb2Sb4Se10]. Careful structural analysis of the magnetic subunit, [(MnxPb2-x)3Se30]∞ and the temperature dependent magnetic susceptibility of (MnxPb2-x)Pb2Sb4Se10, indicate that the compounds are geometrically frustrated 1D ferromagnets. Interestingly, the degree of geometrical spin frustration (f) within the magnetic ladders and the strength of the intrachain antiferromagnetic (AFM) interactions strongly depend on the concentration (x value) and the distribution of the Mn atom within the magnetic substructure. The combination of strong intrachain AFM interactions and geometrical spin frustration in the [(MnxPb2-x)3Se30]∞ ladders results in a cooperative ferromagnetic order with exceptionally high magnetic moment at around 125 K. Magnetotransport study of the Mn2Pb2Sb4Se10 composition over the temperature range from 100 to 200 K revealed negative magnetoresistance (NMR) values and also suggested a strong contribution of magnetic polarons to the observed large effective magnetic moments.

High-Tc Ferromagnetism and Electron Transport in p-Type Fe1–xSnxSb2Se4 Semiconductors

Single-phase polycrystalline powders of Fe(1-x)Sn(x)Sb2Se4 (x = 0 and 0.13) were synthesized by a solid-state reaction of the elements at 773 K. X-ray diffraction on Fe0.87Sn0.13Sb2Se4 single-crystal and powder samples indicates that the compound is isostructural to FeSb2Se4 in the temperature range from 80 to 500 K, crystallizing in the monoclinic space group C2/m (No. 12). Electron-transport data reveal a marginal alteration in the resistivity, whereas the thermopower drops by ∼60%. This suggests a decrease in the activation energy upon isoelectronic substitution of 13% Fe by Sn. Magnetic susceptibility and magnetization measurements from 2 to 500 K reveal that the Fe(1-x)Sb2Sn(x)Se4 phases exhibit ferromagnetic behavior up to ∼450 K (x = 0) and 325 K (x = 0.13). Magnetotransport data for FeSb2Se4 reveal large negative magnetoresistance, suggesting spin polarization of free carriers in the sample. The high-Tc ferromagnetism in Fe(1-x)Sn(x)Sb2Se4 phases and the decrease in Tc of the Fe0.87Sn0.13Sb2Se4 sample are rationalized by taking into account (1) the separation between neighboring magnetic centers in the crystal structures and (2) the formation of bound magnetic polarons, which overlap to induce long-range ferromagnetic ordering.

1H and 13C NMR assignments for a series of Diels–Alder adducts of anthracene and 9-substituted anthracenes

Keywords: 1H NMR; 13C NMR; HSQC; HMBC; Diels-Alder reaction; Anthracene derivatives; Crystal structures

Correction to "Coexistence of high-Tc ferromagnetism and n-type electrical conductivity in FeBi2Se4".

■ ACKNOWLEDGMENTS The synthesis and structural characterization portion of this work was supported by the National Science Foundation (NSF) Career Award DMR-1237550. C.U. and P.F.P.P. gratefully acknowledge financial support for electrical conductivity, Hall effect, and magnetic measurements from the Department of Energy, Office of Basic Energy Sciences, under Award No. DE-SC-0008574. D.P.Y. acknowledges support for heat capacity and magnetoresistance measurements from the NSF under grant no. DMR-1306392. Magnetic data were recorded on a SQUID magnetometer at the University of Michigan purchased using an MRI grant from the NSF (CHE104008).

Correction to Pb7Bi4Se13: A Lillianite Homologue with Promising Thermoelectric Properties

■ ACKNOWLEDGMENTS The synthesis and structural characterization portion of this work was supported by the National Science Foundation Career Award DMR-1237550. P.F.P.P. and C.U. also gratefully acknowledge partial financial support for electronic and thermal transport measurements from the Department of Energy, Office of Basic Energy Sciences, under Award DE-SC-0008574. G.S. was supported as part of the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center, funded by the U.S. Department of Energy Office of Science, Office of Basic Energy Sciences, under Award DESC0000957 (computational studies). Computational resources were provided by the National Energy Research Scientific Computing Center, supported by the Office of Science of the U.S. Department of Energy under Contract DE-AC02-05CH11231.