Hubert Maier
Infineon Technologies
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Publication
Featured researches published by Hubert Maier.
international symposium on power semiconductor devices and ic's | 2009
Christoph Kadow; Stefan Decker; Donald Dibra; Norbert Krischke; Sven Lanzerstorfer; Hubert Maier; Thorsten Meyer; Nicola Vannucci; Robert Zink
We report on using a single trench unit process for the trench isolation and for the trench power MOSFET of a common-drain smart power IC technology. The trench power MOSFET has a maximum specific on-resistance, (Ron⋅A), below 50mΩ-mm2 and a typical breakdown voltage, Vbr, of 95V. The trench isolation provides well isolation up to 90V. Using a single trench unit process for both devices results in low process costs. In addition both power and logic areas of a chip benefit from the trench process.
Archive | 2007
Nicola Vannucci; Hubert Maier
Archive | 2001
Sven Lanzerstorfer; Hubert Maier
Archive | 2005
Johann Rieger; Stefan Dr. Lipp; Hans Zeindl; Thomas Detzel; Hubert Maier
Archive | 2000
Sven Lanzerstorfer; Hubert Maier
Archive | 2015
Kurt Matoy; Hubert Maier; Christian Krenn; Elfriede Wellenzohn; Helmut Schoenherr; Juergen Steinbrenner; Markus Kahn; Silvana Fister; Christoph Brunner; Herbert Gietler; Uwe Hoeckele
Archive | 2006
Hubert Maier; Thomas Detzel
Archive | 2015
Manfred Engelhardt; Gudrun Stranzl; Markus Zundel; Hubert Maier
Archive | 2015
Hubert Maier
Archive | 2007
Thomas Detzel; Hubert Maier; Kai-Alexander Schreiber; Stefan Woehlert; Uwe Hoeckele
