Hung-Chieh Cheng

Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

Toward barrier free contact to molybdenum disulfide using graphene electrodes.

Two-dimensional layered semiconductors such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges in making reliable contacts to these atomically thin materials. Here we present a new strategy by using graphene as the back electrodes to achieve ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. We demonstrate for the first time a transparent contact to MoS2 with zero contact barrier and linear output behavior at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator transition can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm(2)/(V s) in MoS2 at low temperature.

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

Scalable growth of regular arrays of perovskite microplates opens a new platform for electronic and optoelectronic device arrays. Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

van der Waals Heterojunction Devices Based on Organohalide Perovskites and Two-Dimensional Materials

The recently emerged organohalide perovskites (e.g., CH3NH3PbI3) have drawn intense attention for high efficiency solar cells. However, with a considerable solubility in many solvents, these perovskites are not typically compatible with conventional lithography processes for more complicated device fabrications that are important for both fundamental studies and technological applications. Here, we report the creation of novel heterojunction devices based on perovskites and two-dimensional (2D) crystals by taking advantage of the layered characteristic of lead iodide (PbI2) and vapor-phase intercalation. We show that a graphene/perovskite/graphene vertical stack can deliver a highest photoresponsivity of ∼950 A/W and photoconductive gain of ∼2200, and a graphene/WSe2/perovskite/graphene heterojunction can display a high on/off ratio (∼10(6)) transistor behavior with distinct gate-tunable diode characteristics and open-circuit voltages. Such unique perovskite-2D heterostructures have significant potential for future optoelectronic research and can enable broad possibilities with compositional tunability of organohalide perovskites and the versatility offered by diverse 2D materials.

The Effect of Thermal Annealing on Charge Transport in Organolead Halide Perovskite Microplate Field-Effect Transistors

Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipolar p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low-concentration defects in perovskite materials.

Electronic and Ionic Transport Dynamics in Organolead Halide Perovskites

Ion migration has been postulated as the underlying mechanism responsible for the hysteresis in organolead halide perovskite devices. However, the electronic and ionic transport dynamics and how they impact each other in organolead halide perovskites remain elusive to date. Here we report a systematic investigation of the electronic and ionic transport dynamics in organolead halide perovskite microplate crystals and thin films using temperature-dependent transient response measurements. Our study reveals that thermally activated ionic and electronic conduction coexist in perovskite devices. The extracted activation energies suggest that the electronic transport is easier, but ions migrate harder in microplates than in thin films, demonstrating that the crystalline quality and grain boundaries can fundamentally modify electronic and ionic transport in perovskites. These findings offer valuable insight on the electronic and ionic transport dynamics in organolead halide perovskites, which is critical for optimizing perovskite devices with reduced hysteresis and improved stability and efficiency.

Chemical vapor deposition growth of single-crystalline cesium lead halide microplatelets and heterostructures for optoelectronic applications

Organic–inorganic hybrid halide perovskites, such as CH3NH3PbI3, have emerged as an exciting class of materials for solar photovoltaic applications; however, they are currently plagued by insufficient environmental stability. To solve this issue, all-inorganic halide perovskites have been developed and shown to exhibit significantly improved stability. Here, we report a single-step chemical vapor deposition growth of cesium lead halide (CsPbX3) microcrystals. Optical microscopy studies show that the resulting perovskite crystals predominantly adopt a square-platelet morphology. Powder X-ray diffraction (PXRD) studies of the resulting crystals demonstrate a highly crystalline nature, with CsPbCl3, CsPbBr3, and CsPbI3 showing tetragonal, monoclinic, and orthorhombic phases, respectively. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies show that the resulting platelets exhibit well-faceted structures with lateral dimensions of the order of 10–50 μm, thickness around 1 μm, and ultra-smooth surface, suggesting the absence of obvious grain boundaries and the single-crystalline nature of the individual microplatelets. Photoluminescence (PL) images and spectroscopic studies show a uniform and intense emission consistent with the expected band edge transition. Additionally, PL images show brighter emission around the edge of the platelets, demonstrating a wave-guiding effect in high-quality crystals. With a well-defined geometry and ultra-smooth surface, the square platelet structure can function as a whispering gallery mode cavity with a quality factor up to 2,863 to support laser emission at room temperature. Finally, we demonstrate that such microplatelets can be readily grown on a variety of substrates, including silicon, graphene, and other two-dimensional materials such as molybdenum disulfide, which can readily allow the construction of heterostructure optoelectronic devices, including a graphene/perovskite/graphene vertically-stacked photodetector with photoresponsivity > 105 A/W. The extraordinary optical properties of CsPbX3 platelets, combined with their ability to be grown on diverse materials to form functional heterostructures, can lead to exciting opportunities for broad optoelectronic applications.

Cosolvent Approach for Solution-Processable Electronic Thin Films

Low-temperature solution-processable electronic materials are of considerable interest for large-area, low-cost electronics, thermoelectrics, and photovoltaics. Using a soluble precursor and suitable solvent to formulate a semiconductor ink is essential for large-area fabrication of semiconductor thin films. To date, it has been shown that hydrazine can be used as a versatile solvent to process a wide range of inorganic semiconductors. However, hydrazine is highly toxic and not suitable for large-scale manufacturing. Here we report a binary mixed solvent of amine and thiol for effective dispersion and dissolution of a large number of inorganic semiconductors including Cu2S, Cu2Se, In2S3, In2Se3, CdS, SnSe, and others. The mixed solvent is significantly less toxic and safer than hydrazine, while at the same time offering the comparable capability of formulating diverse semiconductor ink with a concentration as high as >200 mg/mL. We further show that such ink material can be readily processed into high-performance semiconducting thin films (Cu2S and Cu2Se) with the highest room-temperature conductivity among solution-based materials. Furthermore, we show that complex semiconductor alloys with tunable band gaps, such as CuIn(S(x)Se(1-x))2 (0 ≤ x ≤ 1), can also be readily prepared by simply mixing Cu2S, Cu2Se, In2S3, and In2Se3 ink solutions in a proper ratio. Our study outlines a general strategy for the formulation of inorganic semiconductor ink for low-temperature processing of large-area electronic thin films on diverse substrates and can greatly impact diverse areas including flexible electronics, thermoelectrics, and photovoltaics.

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

This work is supported by National Science Foundation (DMR1508144), NSFC (Grant Nos. 61274123, 61474099, 61674127,and 61431014), and micro-fabrication/nano-fabrication platform of ZJU University, and the Fundamental Research Funds for the Central Universities (2016XZZX001-05). This work is also supported by ZJU Cyber Scholarship and Cyrus Tang Center for Sensor Materials and Applications, the Open Research Fund of State Key Laboratory of Bioelectronics, Southeast University, the Open Research Fund of State Key Laboratory of Nanodevices and Applications at Chinese Academy of Sciences (No.14ZS01), and Visiting-by-Fellowship of Churchill College at University of Cambridge.

High‐Current‐Density Vertical‐Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures.