Hye-In Yeom

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

We report the electrical characteristics of backchannel etch (BCE) metal-oxide-semiconductor thin-film transistor (TFT) comprised of aluminum-doped tin-zinc-indium oxide (ATZIO). It has high etch selectivity in wet chemical etchants, which consist of H3PO4, CH3COOH, and HNO3. This is contrary to the conventional metal-oxide-semiconductors of indium-gallium-zinc oxides, which are highly soluble in the acidic chemicals. As a result, no etch stop layer is needed to protect the backchannel from the wet etchant damage during the source and drain patterning in the bottom-gate-staggered TFT structure. This provides the possibility of oxide TFT fabrication process made as simple as that of the current amorphous silicon TFT using three or four photomasks with short channel length and less parasitic capacitance. The electrical characteristics of our ATZIO BCE-TFTs have the mobility of 21.4 cm2/V · s, subthreshold swing (S.S) of 0.11 V/decade, and threshold voltage of 0.8 V. In spite of the BCE structure, they have excellent stability against bias temperature stress, which shows the threshold voltage shifts of +0.75 V and -0.51 V under the prolonged positive (+20 V) and negative (-20 V) gate bias stresses for 10 000 s at 60 °C, respectively.

Inorganic Polymer Micropillar‐Based Solution Shearing of Large‐Area Organic Semiconductor Thin Films with Pillar‐Size‐Dependent Crystal Size

It is demonstrated that the crystal size of small-molecule organic semiconductors can be controlled during solution shearing by tuning the shape and dimensions of the micropillars on the blade. Increasing the size and spacing of the rectangular pillars increases the crystal size, resulting in higher thin-film mobility. This phenomenon is attributed as the microstructure changing the degree and density of the meniscus line curvature, thereby controlling the nucleation process. The use of allylhybridpolycarbosilane (AHPCS), an inorganic polymer, is also demonstrated as the microstructured blade for solution shearing, which has high resistance to organic solvents, can easily be microstructured via molding, and is flexible and durable. Finally, it is shown that solution shearing can be performed on a curved surface using a curved blade. These demonstrations bring solution shearing closer to industrial applications and expand its applicability to various printed flexible electronics.