Hyeong-Do Kim

Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors

We investigated the thermal and plasma-enhanced atomic layer deposition (PE-ALD) of tantalum and titanium oxides from representative alkylamide precursors, Ta(NMe 2 ) 5 (pentakis(dimethylamino)Ta, PDMAT) and Ti(NMe 2 ) 4 [tetrakis(dimethylamido)Ti, TDMAT]. ALD of Ta 2 O 5 by PDMAT with water or oxygen plasma produced pure Ta 2 O 5 films with good self-saturation growth characteristics. However, incomplete self-saturation was observed for TiO 2 ALD from TDMAT. The film properties including microstructure, chemical composition, and electrical properties are discussed focusing on the comparative studies between thermal and PE-ALD processes for both oxides. The results indicate that the PDMAT is a promising precursor for both thermal and PE-ALD of Ta 2 O 5 .

Three-dimensional fluid simulation of a plasma display panel cell

In order to understand the discharge characteristics in an alternating current plasma display panel (ac PDP) and optimize it further, a three-dimensional fluid code (FL3P) has been developed. Using this simulator, various three-dimensional features of discharges are investigated in the sustain mode of PDP. First, the striations of wall charge are observed at both the anode and cathode side. Second, the local efficiency is obtained as a function of position. It is mainly divided into the anode region and the cathode region and highest near the anode center. Finally, the effects of various three-dimensional parameters are studied. As one of the examples showing the effect of electrode shaping, the discharge characteristics of a T-shaped electrode cell are compared with those of a conventional cell. The phosphor on barrier ribs contributes to over 44% of the total luminance, but barrier ribs themselves do not play an important role in the overall discharge efficiency. Address electrode width is not always pr...

Core-Level X-Ray Photoemission Satellites in Ruthenates: A New Mechanism Revealing The Mott Transition

Core-level x-ray photoemission spectra for the Mott-Hubbard systems are calculated by the dynamical mean-field theory based on the exact diagonalization method. The spectra show a two-peak structure, screened and unscreened peaks. The screened peak is absent in a Mott insulator, but develops into the main peak when the correlation strength becomes weak and the system turns metallic. The calculated spectral behavior is consistent with the experimental Ru 3d core-level spectra of various ruthenates. This new mechanism of the core-level photoemission satellite can be utilized to reveal the Mott transition phenomenon in various strongly correlated electron systems, especially in nanoscale devices and phase-separated materials.

X-ray absorption spectroscopy study of diluted magnetic semiconductors: Zn 1 − x M x Se ( M = Mn , Fe, Co) and Zn 1 − x Mn x Y ( Y = Se , Te)

We have investigated

Direct Observation of Localized Spin Antiferromagnetic Transition in PdCrO2 by Angle-Resolved Photoemission Spectroscopy

3d

X-ray photoelectron spectroscopy study of HgBa2CuO4+δ

electronic states of doped transition metals in II-VI diluted magnetic semiconductors

Evidence for Anionic Excess Electrons in a Quasi-Two-Dimensional Ca2N Electride by Angle-Resolved Photoemission Spectroscopy.

{mathrm{Zn}}_{1ensuremath{-}x}{M}_{x}mathrm{Se}(M=mathrm{Mn},mathrm{F}mathrm{e},mathrm{C}mathrm{o})

Sputtering Effect on Amorphous Ga-In-Zn-O Thin-Film Surface: Occurrence of Subgap and Metallic States

and

Discharge asymmetry induced by the pulsed radio-frequency current

{mathrm{Zn}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}Y(Y=mathrm{Se},mathrm{Te}),

High-resolution Ce 3 d − edge resonant photoemission study of CeNi 2

using the transition-metal