Hyeonseok Woo
Dongguk University
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Publication
Featured researches published by Hyeonseok Woo.
Scientific Reports | 2016
S.M. Pawar; Jong Min Kim; Akbar I. Inamdar; Hyeonseok Woo; Yongcheol Jo; Bharati S. Pawar; Sangeun Cho; Hyungsang Kim; Hyunsik Im
This work reports on the concurrent electrochemical energy storage and conversion characteristics of granular copper oxide electrode films prepared using reactive radio-frequency magnetron sputtering at room temperature under different oxygen environments. The obtained films are characterized in terms of their structural, morphological, and compositional properties. X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope studies reveal that granular, single-phase Cu2O and CuO can be obtained by controlling the oxygen flow rate. The electrochemical energy storage properties of the films are investigated by carrying out cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy tests. The electrochemical analysis reveals that the Cu2O and CuO electrodes have high specific capacitances of 215 and 272 F/g in 6 M KOH solution with a capacity retention of about 80% and 85% after 3000 cycles, respectively. Cyclic voltammetry and chronoamperometry are used to study the electrochemical energy conversion properties of the films via methanol electro-oxidation. The results show that the Cu2O and CuO electrodes are electro-catalytically active and highly stable.
Scientific Reports | 2015
Yongcheol Jo; Kyooho Jung; Jong Min Kim; Hyeonseok Woo; Jaeseok Han; Hyungsang Kim; JinPyo Hong; Jeon-Kook Lee; Hyunsik Im
This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I–V) characteristics are observed within the RS voltage window of −2.5 to +1.9 V, with good endurance and retention properties. As the bias voltage increases further beyond 4 V under a forward bias, a forming process occurs resulting in irreversible RS mode transformation from bipolar to unipolar mode. This switching mode transformation is a direct consequence of thermally activated Ti out-diffusion from a Ti adhesion layer. Transition metal Ti effectively out-diffuses through the loose Pt electrode layer at high substrate temperatures, leading to the unintended formation of a thin titanium oxide (TiOx where x < 2) layer between the Pt electrode and the SZO:Cr layer as well as additional Ti atoms in the SZO:Cr layer. Cross-sectional scanning electron microscopy, transmission electron microscopy and Auger electron spectroscopy depth-profile measurements provided apparent evidence of the Ti out-diffusion phenomenon. We propose that the out-diffusion-induced additional Ti atoms in the SZO:Cr layer contributes to the creation of the metallic filamentary channels.
ACS Applied Materials & Interfaces | 2016
Jong Min Kim; Akbar I. Inamdar; Yongcheol Jo; Hyeonseok Woo; Sangeun Cho; S.M. Pawar; Hyungsang Kim; Hyunsik Im
This study investigates the transport and switching time of nonvolatile tungsten oxide based resistive-switching (RS) memory devices. These devices consist of a highly resistive tungsten oxide film sandwiched between metal electrodes, and their RS characteristics are bipolar in the counterclockwise direction. The switching voltage, retention, endurance, and switching time are strongly dependent on the type of electrodes used, and we also find quantitative and qualitative evidence that the electronegativity (χ) of the electrodes plays a key role in determining the RS properties and switching time. We also propose an RS model based on the role of the electronegativity at the interface.
Scientific Reports | 2016
Jong Min Kim; Kyooho Jung; Yongmin Kim; Yongcheol Jo; Sangeun Cho; Hyeonseok Woo; Seongwoo Lee; Akbar I. Inamdar; JinPyo Hong; Jeon-Kook Lee; Hyungsang Kim; Hyunsik Im
We investigate the resistive switching power from unipolar resistive switching current-voltage characteristics in various binary metal oxide films sandwiched by different metal electrodes, and find a universal feature (the so-called universality) in the switching power among these devices. To experimentally derive the switching power universality, systematic measurements of the switching voltage and current are performed, and neither of these correlate with one another. As the switching resistance (R) increases, the switching power (P) decreases following a power law P ∝ R−β, regardless of the device configurations. The observed switching power universality is indicative of the existence of a commonly applicable switching mechanism. The origin of the power universality is discussed based on a metallic filament model and thermo-chemical reaction.
Journal of Applied Physics | 2014
Jongkyong Lee; Suhyun Gang; Yongcheol Jo; Jong Min Kim; Hyeonseok Woo; Jaeseok Han; Hyungsang Kim; Hyunsik Im
We have investigated the temperature dependence of ballistic mobility in a 100 nm-long InGaAs/InAlAs metamorphic high-electron-mobility transistor designed for millimeter-wavelength RF applications. To extract the temperature dependence of quasi-ballistic mobility, our experiment involves measurements of the effective mobility in the low-bias linear region of the transistor and of the collision-dominated Hall mobility using a gated Hall bar of the same epitaxial structure. The data measured from the experiment are consistent with that of modeled ballistic mobility based on ballistic transport theory. These results advance the understanding of ballistic transport in various transistors with a nano-scale channel length that is comparable to the carriers mean free path in the channel.
Data in Brief | 2017
Akbar I. Inamdar; Jongmin Kim; Yongcheol Jo; Hyeonseok Woo; Sangeun Cho; S.M. Pawar; Seongwoo Lee; Jayavant L. Gunjakar; Yuljae Cho; Bo Hou; SeungNam Cha; Jungwon Kwak; Youngsin Park; Hyungsang Kim; Hyunsik Im
The dataset presented here is related to the research article entitled “Highly Efficient Electro-optically Tunable Smart-supercapacitors Using an Oxygen-excess Nanograin Tungsten Oxide Thin Film” (Akbar et al., 2017) [9] where we have presented a nanograin WO3 film as a bifunctional electrode for smart supercapacitor devices. In this article we provide additional information concerning nanograin tungsten oxide thin films such as atomic force microscopy, Raman spectroscopy, and X-ray diffraction spectroscopy. Moreover, their electrochemical properties such as cyclic voltammetry, electrochemical supercapacitor properties, and electrochromic properties including coloration efficiency, optical modulation and electrochemical impedance spectroscopy are presented.
Thin Solid Films | 2015
Jongmin Kim; D.Y. Kim; Yongcheol Jo; Jaeseok Han; Hyeonseok Woo; Hyungsang Kim; K.K. Kim; Jung-Pyo Hong; Hyunsik Im
Materials Letters | 2016
Akbar I. Inamdar; Sangeun Cho; Yongcheol Jo; Jongmin Kim; Jaeseok Han; S.M. Pawar; Hyeonseok Woo; Ramchandra S. Kalubarme; Chan-Jin Park; Hyungsang Kim; Hyunsik Im
Journal of the Korean Physical Society | 2014
Jongmin Kim; Jae Sang Sohn; Yongcheol Jo; Hyeonseok Woo; Jaeseok Han; Sangeun Cho; Akbar I. Inamdar; Hyungsang Kim; Hyunsik Im
Current Applied Physics | 2014
Yongcheol Jo; Jongmin Kim; Hyeonseok Woo; Duwhan Kim; James W. Lee; Akbar I. Inamdar; Hyunsik Im; Hyungsang Kim