Hyungsang Kim
Dongguk University
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Featured researches published by Hyungsang Kim.
Applied Physics Express | 2010
Jaehoon Song; Akbar I. Inamdar; B.U. Jang; Kiyoung Jeon; YoungSam Kim; Kyooho Jung; Yongmin Kim; Hyunsik Im; Woong Jung; Hyungsang Kim; Jung-Pyo Hong
We prepared resistive switching Al–AlOx multilayered junctions and observed considerably improved endurance properties. The mechanism of the observed resistance switching basically reflects the filament model. The temperature dependence of the transport in each resistance state revealed additional features, that is a well-defined thermal activation behavior in the high-resistance state is not observed in the layered device and the metallic conduction in the low-resistance state is not affected. The improved endurance properties are discussed in terms of the increased effective number of active regions, where the Reset and Set processes probably occur before a permanent dielectric breakdown.
Materials Letters | 2001
Hyungsang Kim; Jae-Eung Oh; T.W. Kang
Abstract In this study, 30×30 mm 2 free-standing GaN substrates were fabricated from 400–450 μm thick GaN films grown on (0001) sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the substrate by mechanical polishing liftoff method, using a diamond slurry. After liftoff, the bow is only slight or absent in the resulting free-standing GaN wafers.
Scientific Reports | 2016
S.M. Pawar; Jong Min Kim; Akbar I. Inamdar; Hyeonseok Woo; Yongcheol Jo; Bharati S. Pawar; Sangeun Cho; Hyungsang Kim; Hyunsik Im
This work reports on the concurrent electrochemical energy storage and conversion characteristics of granular copper oxide electrode films prepared using reactive radio-frequency magnetron sputtering at room temperature under different oxygen environments. The obtained films are characterized in terms of their structural, morphological, and compositional properties. X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope studies reveal that granular, single-phase Cu2O and CuO can be obtained by controlling the oxygen flow rate. The electrochemical energy storage properties of the films are investigated by carrying out cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy tests. The electrochemical analysis reveals that the Cu2O and CuO electrodes have high specific capacitances of 215 and 272 F/g in 6 M KOH solution with a capacity retention of about 80% and 85% after 3000 cycles, respectively. Cyclic voltammetry and chronoamperometry are used to study the electrochemical energy conversion properties of the films via methanol electro-oxidation. The results show that the Cu2O and CuO electrodes are electro-catalytically active and highly stable.
ACS Applied Materials & Interfaces | 2016
Vasudevan Kannan; Akbar I. Inamdar; Sambaji M. Pawar; Hyunseok Kim; Hyun-Chang Park; Hyungsang Kim; Hyunsik Im; Yeon Sik Chae
We report an efficient method for growing NiO nanostructures by oblique angle deposition (OAD) technique in an e-beam evaporator for supercapacitor applications. This facile physical vapor deposition technique combined with OAD presents a unique, direct, and economical route for obtaining high width-to-height ratio nanorods for supercapacitor electrodes. The NiO nanostructure essentially consists of nanorods with varying dimensions. The sample deposited at OAD 75° showed highest supercapacitance value of 344 F/g. NiO nanorod electrodes exhibits excellent electrochemical stability with no degradation in capacitance after 5000 charge-discharge cycles. The nanostructured film adhered well to the substrate and had 131% capacity retention. Peak energy density and power density of the NiO nanorods were 8.78 Wh/kg and 2.5 kW/kg, respectively. This technique has potential to be expanded for growing nanostructured films of other interesting metal/metal oxide candidates for supercapacitor applications.
Nanotechnology | 2009
Joonhyuk Choi; Jaehoon Song; Kyooho Jung; Yongmin Kim; Hyunsik Im; Woong Jung; Hyungsang Kim; Young Ho Do; June Sik Kwak; JinPyo Hong
Resistance switching phenomena in an amorphous Ni-Ti-O film were investigated. Very clear bipolar resistive switching characteristics were observed with good reproducibility. Stable retention and on/off pulse switching operation was demonstrated. An analysis of x-ray photoelectron spectroscopy of the Ni-Ti-O film provided a clue that the observed unusual bipolar resistance switching in the film is due to a microscopic change in the Ni-O and Ti-O binding states at the Ni-Ti-O film/electrode interface.
Journal of Biomaterials Science-polymer Edition | 2009
Gyoo Cheon Kim; Hyungsang Kim; Ik-Jung Kim; Jung Ran Kim; Jong Im Lee; M. Ree
We investigated bioadhesion (bacterial and cell adhesion) and biocompatibility of poly(tetrafluoroethylene-co-perfluoro-3,6-dioxa-4-methyl-7-octenesulfonic acid) (Nafion™) and compared the results with those obtained with poly(vinylidene fluoride-co-hexafluoropropylene) (PVFHFP). When incubated with bacteria for 4 h to 7 days, Nafion film exhibited scarce bacterial adhesion at 6 h, after which the adhesion gradually increasing to relatively low levels. In contrast, significant bacterial adhesion to PVFHFP film was observed at 4 h, and much higher adhesion levels were shown thereafter. Although HEp-2 human cells adhered normally to both films, reaching confluence in 7–8 days, the cells adhered to Nafion appeared more lively and stable than those to PVFHFP. Subcutaneous implantation in mice revealed that Nafion elicited a mild acute inflammatory reaction without chronic inflammation or tissue necrosis, indicating excellent biocompatibility in mice. PVFHFP, however, provoked a moderate and prolonged acute inflammatory response. These differences in the biological characteristics of Nafion and PVFHFP films may be attributable to the differences in the chemical and physical natures of these polymer films. Nafion film provided a sufficiently solid support, expressing a high surface charge density and good water-wettability. In summary, Nafion is suitable for use in biomedical applications that require biocompatibility with a reduced possibility of post-operative infections.
Journal of Applied Physics | 2011
Kyooho Jung; Yongmin Kim; Young S. Park; Woong Jung; Jungae Choi; Baeho Park; Hyungsang Kim; Wondong Kim; JinPyo Hong; Hyunsik Im
We have observed unipolar-type resistance switching in an ultrathin niobium oxide film. An analysis of the temperature dependence of the resistance switching transport revealed that low-resistance state showed a type of electrical conduction typically observed in metals. The modification in chemical binding states of the film in different resistance states was studied using x-ray photoelectron spectroscopy. The analysis of XPS showed that metallic suboxides NbOδ (δ ≪ 2), decomposed from some of Nb2O5 and NbO2 components of the film, were created after electroforming process, suggesting that the metallic suboxides are constituting elements of metallic channels in the low resistance state.
Journal of Materials Chemistry | 2017
S.M. Pawar; Bharati S. Pawar; Bo Hou; Jongmin Kim; Abu Talha Aqueel Ahmed; Harish S. Chavan; Yongcheol Jo; Sangeun Cho; Akbar I. Inamdar; Jayavant L. Gunjakar; Hyungsang Kim; SeungNam Cha; Hyunsik Im
A high activity of a two-dimensional (2D) copper oxide (CuO) electrocatalyst for the oxygen evolution reaction (OER) is presented. The CuO electrode self-assembles on a stainless steel substrate via chemical bath deposition at 80 °C in a mixed solution of CuSO4 and NH4OH, followed by air annealing treatment, and shows a 2D nanosheet bundle-type morphology. The OER performance is studied in a 1 M KOH solution. The OER starts to occur at about 1.48 V versus the RHE (η = 250 mV) with a Tafel slope of 59 mV dec−1 in a 1 M KOH solution. The overpotential (η) of 350 mV at 10 mA cm−2 is among the lowest compared with other copper-based materials. The catalyst can deliver a stable current density of >10 mA cm−2 for more than 10 hours. This superior OER activity is due to its adequately exposed OER-favorable 2D morphology and the optimized electronic properties resulting from the thermal treatment.
Journal of Materials Chemistry | 2016
Akbar I. Inamdar; Ramchandra S. Kalubarme; Jongmin Kim; Yongcheol Jo; Hyunseok Woo; Sangeun Cho; S.M. Pawar; Chan-Jin Park; Young-Woo Lee; Jung Inn Sohn; SeungNam Cha; Jungwon Kwak; Hyungsang Kim; Hyunsik Im
We demonstrate the impressive performance of sparsely studied nickel titanate anode materials for Li-ion batteries (LIBs). The nickel titanate anode delivers a high reversible discharge capacity of 435 mA h g−1 at a current density of 35 mA g−1, high-rate performance and excellent cycling retention of 96% with a long-term cycling stability at 1500 mA g−1 over 300 cycles. The coulombic efficiency is obtained as high as 98%. This superior nickel titanate electrode material could be used as a safe, low-cost, long cycle life anode material for next-generation LIBs with a high power capability.
Scientific Reports | 2015
Yongcheol Jo; Kyooho Jung; Jong Min Kim; Hyeonseok Woo; Jaeseok Han; Hyungsang Kim; JinPyo Hong; Jeon-Kook Lee; Hyunsik Im
This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I–V) characteristics are observed within the RS voltage window of −2.5 to +1.9 V, with good endurance and retention properties. As the bias voltage increases further beyond 4 V under a forward bias, a forming process occurs resulting in irreversible RS mode transformation from bipolar to unipolar mode. This switching mode transformation is a direct consequence of thermally activated Ti out-diffusion from a Ti adhesion layer. Transition metal Ti effectively out-diffuses through the loose Pt electrode layer at high substrate temperatures, leading to the unintended formation of a thin titanium oxide (TiOx where x < 2) layer between the Pt electrode and the SZO:Cr layer as well as additional Ti atoms in the SZO:Cr layer. Cross-sectional scanning electron microscopy, transmission electron microscopy and Auger electron spectroscopy depth-profile measurements provided apparent evidence of the Ti out-diffusion phenomenon. We propose that the out-diffusion-induced additional Ti atoms in the SZO:Cr layer contributes to the creation of the metallic filamentary channels.