Hyo Seok Kim

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism

A WSe2 -based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10(7) at 180 K (3 × 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.

Highly luminescent blue-emitting CdZnS/ZnS nanorods having electric-field-induced fluorescence switching properties

We demonstrate for the first time highly luminescent blue-emitting CdZnS/ZnS wurtzite core/shell nanorods (NRs) that show electric-field-induced fluorescence switching properties. Uniform CdZnS NRs were rapidly synthesized by injecting sulfur powder dissolved in 1-octadecene into a flask containing phosphonic acid ligands, and subsequently ZnS shells were coated using reagents consisting of sulfur powder, zinc sulfate heptahydrate, and oleylamine. The growth of high-quality ZnS shells resulted in a dramatically increased photoluminescence (PL) quantum yield (QY) of ∼40% with a minimal red-shift of the blue PL peak, which indicates that the combination of reagents successfully controlled a large number of defects appearing on the surface of the NR cores. By pre-annealing CdZnS cores before growing ZnS shells, we could achieve an additional increase in the maximum PL QY to 50%, decreases in both the full width at half maximum (FWHM) and the red-shift of the PL peak, and improved electric-field-induced fluorescence switching performance. Density functional theory calculations reveal that the effective relaxation of strain accumulating on the NR core during shell growth is the key to our successful synthesis of blue-emitting NRs, and that the additional improvement in performance obtained through the pre-annealing process results from the elimination of sulfur vacancies appearing at the surface of the NR core.

Anomalous transport properties in boron and phosphorus co-doped armchair graphene nanoribbons

Multi-element doping of graphene could potentially provide functionalities that are not available in the single-element doping approach, but it has not been actively studied so far. Carrying out first-principles calculations, we study the structural, electronic, and transport properties of B-P edge-co-doped armchair graphene nanoribbons (aGNRs). We find that the B, P-complex edge-doped aGNRs exhibit an n-type transport behavior, which is counterintuitive considering the p-type and bipolar characters of the corresponding B- and P-doped aGNRs, respectively. Moreover, we show that the n-type property of B, P co-doped aGNRs is superior to that of representative N-doped aGNRs in terms of preserving the valence band edge conductance spectrum. Analyzing the mechanisms, we demonstrate that the structural distortion rather than chemical valence induces the anomalous donor character of B, P co-doped aGNRs. We thus propose a systematic modification of GNR atomic structures via co-doping as a novel approach to control charge transport characteristics of GNRs.