Hyun Gu Kim
Incheon National University
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Featured researches published by Hyun Gu Kim.
RSC Advances | 2016
Jae Hee Shin; Hyun Gu Kim; Gwang Min Baek; Reehyang Kim; Suwan Jeon; Jeong Ho Mun; Han-Bo-Ram Lee; Yeon Sik Jung; Sang Ouk Kim; Kyoung Nam Kim; Geun Young Yeom
Surface-enhanced Raman scattering (SERS) represents an important phenomenon that can solve the low signal intensity of Raman spectroscopy, applied as a bio and chemical sensor and analyzer. The SERS effect can be varied with the substrate structure. In this study, we investigated the effect of various Pt nanostructures (e.g., Pt nanoholes, Pt nanorods, and Pt nanotubes) on the sensitivity of SERS. We fabricated 50 nm-scale Pt nanostructures with different heights with a self-aligned block copolymer (BCP) process composed of the self-assembly of BCP, Pt atomic layer deposition, and reactive ion etching of a silicon substrate and Pt. Our investigation of the SERS effect with rhodamine 6G showed a significant dependence on the shape (but not the height) of the nanostructure. Among the different Pt nanostructures investigated, Pt nanotubes (possessing the structural characteristics of nanoholes and nanorods) showed the highest SERS effect, while Pt nanoholes showed the lowest SERS effect.
Journal of the Korean institute of surface engineering | 2015
Hyun Gu Kim; Han-Bo-Ram Lee
Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are one of the important material components for electronic devices as a conductor. As the size of electronic devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on TiO2 substrate by using trimethyl-methyl-cyclopentadienyl-Platinum (MeCpPtMe3) precursor and O3 reactant. By using O3 instead of O2, initial nucleation rate of ALD Pt was increased on TiO2 surface, resulting in formation of continuous thin Pt films. Morphologies of ALD Pt on TiO2 were characterized by using Scanning Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on TiO2 correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).
Chemistry of Materials | 2017
Hyun Gu Kim; Han-Bo-Ram Lee
Advanced Functional Materials | 2017
Jinxing Li; Wenjuan Liu; Jiyuan Wang; Isaac Rozen; Sha He; Chuanrui Chen; Hyun Gu Kim; Ha-Jin Lee; Han-Bo-Ram Lee; Se-Hun Kwon; Tianlong Li; Longqiu Li; Joseph Wang; Yongfeng Mei
Npg Asia Materials | 2016
Jaehong Lee; Jaehong Yoon; Hyun Gu Kim; Subin Kang; Woo Suk Oh; Hassan Algadi; S.A. Al-Sayari; Bonggeun Shong; Soo-Hyun Kim; Hyungjun Kim; Taeyoon Lee; Han Bo Ram Lee
Advanced electronic materials | 2016
Woojin Park; Yonghun Kim; Ukjin Jung; Jin Ho Yang; Chunhum Cho; Yun Ji Kim; Syed Mohammad Najib Hasan; Hyun Gu Kim; Han Bo Ram Lee; Byoung Hun Lee
RSC Advances | 2017
Dong Seok Shin; Hyun Gu Kim; Ho Seon Ahn; Hu Young Jeong; Youn-Jung Kim; Dorj Odkhuu; Namsrai Tsogbadrakh; Han-Bo-Ram Lee; Byung Hoon Kim
Chemistry of Materials | 2018
Chang Mo Yoon; Il Kwon Oh; Y. C. Lee; Jeong Gyu Song; Su Jeong Lee; Jae Min Myoung; Hyun Gu Kim; Hyoung Seok Moon; Bonggeun Shong; Han Bo Ram Lee; Hyungjun Kim
Journal of Alloys and Compounds | 2018
Seung Wook Ryu; Jeong Gyu Song; Hyun Gu Kim; Hyungjun Kim; Han Bo Ram Lee
Advanced Materials Interfaces | 2018
Zhixin Wan; Ha Jin Lee; Hyun Gu Kim; Gyeong Cheon Jo; Woon Ik Park; Seung Wook Ryu; Han-Bo-Ram Lee; Se-Hun Kwon