I. V. Gornyi

Electron transport in disordered graphene

We study the electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the concentration dependence of conductivity is linear in the case of strong scatterers, in line with recent experimental observations, and logarithmic for weak scatterers. At half filling the conductivity is of the order of

Interaction-induced criticality in Z(2) topological insulators.

{e}^{2}∕h

Electron-electron interaction in the magnetoresistance of graphene

if the randomness preserves one of the chiral symmetries of the clean Hamiltonian, whereas for generic disorder the conductivity is strongly affected by localization effects.

Magnetoresistance in two-component systems

We study interaction effects in topological insulators with strong spin-orbit coupling. We find that the interplay of nontrivial topology and Coulomb repulsion induces a novel critical state on the surface of a three-dimensional topological insulator. Remarkably, this interaction-induced criticality, characterized by a universal value of conductivity, emerges without any adjustable parameters. Further, we predict a direct quantum-spin-Hall transition in two dimensions that occurs via a similar critical state.

Transport of interacting electrons through a double barrier in quantum wires

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization, the observed temperature-dependent parabolic magnetoresistivity is a manifestation of the electron-electron interaction. We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field-dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of magnetoresistivity and the theory of electron-electron interaction in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to electron-electron interaction from 7 to 3 due to intervalley scattering. In addition, we find a temperature-independent ballistic contribution to the magnetoresistivity in classically strong magnetic fields.

Enhancement of the critical temperature of superconductors by Anderson localization.

Two-component systems with equal concentrations of electrons and holes exhibit nonsaturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality due to recombination. The phenomenon originates in the excess quasiparticle density developing near the edges of the sample due to the compensated Hall effect. The size of the boundary region is of the order of the electron-hole recombination length that is inversely proportional to the magnetic field. In narrow samples and at strong enough magnetic fields, the boundary region dominates over the bulk leading to linear magnetoresistance. Our results are relevant for two-and three-dimensional semimetals and narrow band semiconductors including most of the topological insulators.

Giant Magnetodrag in Graphene at Charge Neutrality

We generalize the fermionic renormalization group method to analytically describe transport through a double barrier structure in a one-dimensional system. Focusing on the case of weakly interacting electrons, we investigate thoroughly the dependence of the conductance on the strength and the shape of the double barrier for arbitrary temperature T. Our approach allows us to systematically analyze the contributions to renormalized scattering amplitudes from different characteristic scales absent in the case of a single impurity, without restricting the consideration to the model of a single resonant level. Both a sequential resonant tunneling for high T and a resonant transmission for T smaller than the resonance width are studied within the unified treatment of transport through strong barriers. For weak barriers, we show that two different regimes are possible. Moderately weak impurities may get strong due to a renormalization by interacting electrons, so that transport is described in terms of theory for initially strong barriers. The renormalization of very weak impurities does not yield any peak in the transmission probability; however, remarkably, the interaction gives rise to a sharp peak in the conductance, provided the asymmetry is not too high.

Coulomb interaction in graphene: Relaxation rates and transport

I.S. Burmistrov, I.V. Gornyi, 3, 4 and A.D. Mirlin 4, 5, 6 1 L.D. Landau Institute for Theoretical Physics, Kosygina street 2, 117940 Moscow, Russia 2 Institut für Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany 3 A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia. 4 DFG Center for Functional Nanostructures, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany 5 Inst. für Theorie der kondensierten Materie, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany 6 Petersburg Nuclear Physics Institute, 188300 St. Petersburg, Russia.

Charge transport in graphene with resonant scatterers

We report experimental data and theoretical analysis of Coulomb drag between two closely positioned graphene monolayers in a weak magnetic field. Close enough to the neutrality point, the coexistence of electrons and holes in each layer leads to a dramatic increase of the drag resistivity. Away from charge neutrality, we observe nonzero Hall drag. The observed phenomena are explained by decoupling of electric and quasiparticle currents which are orthogonal at charge neutrality. The sign of magnetodrag depends on the energy relaxation rate and geometry of the sample.

Collision-dominated nonlinear hydrodynamics in graphene

We analyze the inelastic electron-electron scattering in undoped graphene within the Keldysh diagrammatic approach. We demonstrate that finite temperature strongly affects the screening properties of graphene, which, in turn, influences the inelastic scattering rates as compared to the zero-temperature case. Focussing on the clean regime, we calculate the quantum scattering rate which is relevant for dephasing of interference processes. We identify an hierarchy of regimes arising due to the interplay of a plasmon enhancement of the scattering and finite-temperature screening of the interaction. We further address the energy relaxation and transport scattering rates in graphene. We find a non-monotonic energy dependence of the inelastic relaxation rates in clean graphene which is attributed to the resonant excitation of plasmons. Finally, we discuss the temperature dependence of the conductivity at the Dirac point in the presence of both interaction and disorder. Our results complement the kinetic-equation and hydrodynamic approaches for the collision-limited conductivity of clean graphene and can be generalized to the treatment of physics of inelastic processes in strongly non-equilibrium setups.