P. M. Ostrovsky

Electron transport in disordered graphene

We study the electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the concentration dependence of conductivity is linear in the case of strong scatterers, in line with recent experimental observations, and logarithmic for weak scatterers. At half filling the conductivity is of the order of

Interaction-induced criticality in Z(2) topological insulators.

{e}^{2}∕h

Quantum criticality and minimal conductivity in graphene with long-range disorder.

if the randomness preserves one of the chiral symmetries of the clean Hamiltonian, whereas for generic disorder the conductivity is strongly affected by localization effects.

Ultrafast lithium diffusion in bilayer graphene

We study interaction effects in topological insulators with strong spin-orbit coupling. We find that the interplay of nontrivial topology and Coulomb repulsion induces a novel critical state on the surface of a three-dimensional topological insulator. Remarkably, this interaction-induced criticality, characterized by a universal value of conductivity, emerges without any adjustable parameters. Further, we predict a direct quantum-spin-Hall transition in two dimensions that occurs via a similar critical state.

Giant Magnetodrag in Graphene at Charge Neutrality

We consider the conductivity sigma of graphene with negligible intervalley scattering at half filling. We derive the effective field theory, which, for the case of a potential disorder, is a symplectic-class sigma model including a topological term with theta=pi. As a consequence, the system is at a quantum critical point with a universal value of the conductivity of the order of e(2)/h. When the effective time-reversal symmetry is broken, the symmetry class becomes unitary, and sigma acquires the value characteristic for the quantum Hall transition.

Coulomb interaction in graphene: Relaxation rates and transport

Solids that simultaneously conduct electrons and ions are key elements for the mass transfer and storage required in battery electrodes. Single-phase materials with a high electronic and high ionic conductivity at room temperature are hard to come by, and therefore multiphase systems with separate ion and electron channels have been put forward instead. Here we report on bilayer graphene as a single-phase mixed conductor that demonstrates Li diffusion faster than in graphite and even surpassing the diffusion of sodium chloride in liquid water. To measure Li diffusion, we have developed an on-chip electrochemical cell architecture in which the redox reaction that forces Li intercalation is localized only at a protrusion of the device so that the graphene bilayer remains unperturbed from the electrolyte during operation. We performed time-dependent Hall measurements across spatially displaced Hall probes to monitor the in-plane Li diffusion kinetics within the graphene bilayer and measured a diffusion coefficient as high as 7 × 10-5 cm2 s-1.

Charge transport in graphene with resonant scatterers

We report experimental data and theoretical analysis of Coulomb drag between two closely positioned graphene monolayers in a weak magnetic field. Close enough to the neutrality point, the coexistence of electrons and holes in each layer leads to a dramatic increase of the drag resistivity. Away from charge neutrality, we observe nonzero Hall drag. The observed phenomena are explained by decoupling of electric and quasiparticle currents which are orthogonal at charge neutrality. The sign of magnetodrag depends on the energy relaxation rate and geometry of the sample.

Density of States below the Thouless Gap in a Mesoscopic SNS Junction

We analyze the inelastic electron-electron scattering in undoped graphene within the Keldysh diagrammatic approach. We demonstrate that finite temperature strongly affects the screening properties of graphene, which, in turn, influences the inelastic scattering rates as compared to the zero-temperature case. Focussing on the clean regime, we calculate the quantum scattering rate which is relevant for dephasing of interference processes. We identify an hierarchy of regimes arising due to the interplay of a plasmon enhancement of the scattering and finite-temperature screening of the interaction. We further address the energy relaxation and transport scattering rates in graphene. We find a non-monotonic energy dependence of the inelastic relaxation rates in clean graphene which is attributed to the resonant excitation of plasmons. Finally, we discuss the temperature dependence of the conductivity at the Dirac point in the presence of both interaction and disorder. Our results complement the kinetic-equation and hydrodynamic approaches for the collision-limited conductivity of clean graphene and can be generalized to the treatment of physics of inelastic processes in strongly non-equilibrium setups.

Theory of anomalous quantum Hall effects in graphene

The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e{2}/(pi{2}h) per resonant impurity.

Coulomb drag in graphene: Perturbation theory

Quasiclassical theory predicts an existence of a sharp energy gap E{sub g}{approx}{Dirac_h}D/L{sup 2} in the excitation spectrum of a long diffusive superconductor--normal metal--superconductor (SNS) junction. We show that mesoscopic fluctuations remove the sharp edge of the spectrum, leading to a nonzero density of states (DOS) for all energies. Physically, this effect originates from the quasilocalized states in the normal metal. Technically, we use an extension of Efetovs supermatrix {sigma} model for mixed NS systems. A nonzero DOS at energies E<E{sub g} is provided by the instanton solution with broken supersymmetry.