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Ikuo Niikura

Iwate University

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Publication

Featured researches published by Ikuo Niikura.

Journal of Crystal Growth | 2007

Homoepitaxial growth of non-polar ZnO (112¯0) films on off-angle ZnO substrates by MOCVD

T. Abe; Y. Kashiwaba; S. Onodera; F. Masuoka; Akira Nakagawa; Haruyuki Endo; Ikuo Niikura

Journal of Crystal Growth | 2007

Comparison of non-polar ZnO (112¯0) films deposited on single crystal ZnO (112¯0) and sapphire (011¯2) substrates

Y. Kashiwaba; T. Abe; S. Onodera; F. Masuoka; Akira Nakagawa; Haruyuki Endo; Ikuo Niikura

Physica Status Solidi (c) | 2006

Applicability of ZnO single crystals for ultraviolet sensors

F. Masuoka; K. Ooba; H. Sasaki; Haruyuki Endo; S. Chiba; K. Maeda; H. Yoneyama; Ikuo Niikura; Yasube Kashiwaba

Physica Status Solidi (a) | 2009

Homoepitaxial growth of high-quality nonpolar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes

Yasuhiro Kashiwaba; T. Abe; Akira Nakagawa; Haruyuki Endo; Ikuo Niikura; Yasube Kashiwaba

Applied Surface Science | 2007

Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method

Akira Nakagawa; F. Masuoka; S. Chiba; Haruyuki Endo; K. Megro; Yasuhiro Kashiwaba; T. Ojima; K. Aota; Ikuo Niikura

Archive | 2009

Package for light emitting element and method of manufacturing light emitting element

Ikuo Niikura; 郁生 新倉

Physica Status Solidi (c) | 2006

Photoluminescence properties of ZnO single crystals with polar and non-polar faces

H. Sasaki; H. Kato; F. Izumida; Haruyuki Endo; K. Maeda; M. Ikeda; Yasube Kashiwaba; Ikuo Niikura

Applied Surface Science | 2005

Homoepitaxial growth of ZnO films on ZnO (112¯0) substrates

Y. Kashiwaba; H. Kato; T. Kikuchi; Ikuo Niikura; K. Matsushita

Archive | 2007

Semiconductor light emitting element and method of manufacturing same

K. Aota; Yasube Kashiba; Rei Nakagawa; Ikuo Niikura; 玲 中川; 郁生 新倉; 安兵衛 柏葉; 克己 青田

Physica Status Solidi (c) | 2009

Characteristics of high‐quality homoepitaxial ZnO (0001) films grown by the plasma‐assisted reactive evaporation method

Akira Nakagawa; T. Abe; S. Chiba; Haruyuki Endo; Kazuyuki Meguro; Yasuhiro Kashiwaba; T. Ojima; K. Aota; Ikuo Niikura; Tamiya Fujiwara

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Akira Nakagawa

Iwate University

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T. Abe

Iwate University

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Hiroshi Osada

Iwate University

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Haruyuki Endo

Industrial Research Institute

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Masahiro Daibo

Iwate University

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S. Chiba

Iwate University

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Yasube Kashiwaba

Industrial Research Institute

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K. Aota

Iwate University

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T. Ojima

Iwate University

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Shuzo Takahashi

Iwate University

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