Iman Hassani Nia

Isolated electron injection detectors with high gain and record low dark current at telecom wavelength

We report on recent performance breakthroughs in a novel short-wave infrared linear-mode electron-injection-based detector. Detectors consist of InP material system with a type-II band alignment and provide high internal avalanche-free amplification mechanism. Measurements on devices with 10-μm injector diameter and 30-μm absorber diameter show internal dark current density of about 0.1 nA/cm2 at 160 K. Compared with our previous reported results, dark current is reduced by two orders of magnitude with no sign of surface leakage limitation down to the lowest measured temperature. Compared with the best-reported linear-mode avalanche photodetector, which is based on HgCdTe, the electron-injection detector shows over three orders of magnitude lower internal dark current density at all measured temperatures. Using a detailed simulation with experimentally measured parameters, dark count rate of 1 Hz at 90% photon detection efficiency at 210 K is anticipated. This is a significantly higher operating temperature compared with superconducting detectors with a similar performance.

Integrated all-optical infrared switchable plasmonic quantum cascade laser.

We report a type of infrared switchable plasmonic quantum cascade laser, in which far field light in the midwave infrared (MWIR, 6.1 μm) is modulated by a near field interaction of light in the telecommunications wavelength (1.55 μm). To achieve this all-optical switch, we used cross-polarized bowtie antennas and a centrally located germanium nanoslab. The bowtie antenna squeezes the short wavelength light into the gap region, where the germanium is placed. The perturbation of refractive index of the germanium due to the free carrier absorption produced by short wavelength light changes the optical response of the antenna and the entire laser intensity at 6.1 μm significantly. This device shows a viable method to modulate the far field of a laser through a near field interaction.

Impact of three-dimensional geometry on the performance of isolated electron-injection infrared detectors

We present a quantitative study of the influence of three-dimensional geometry of the isolated electron–injection detectors on their characteristics. Significant improvements in the device performance are obtained as a result of scaling the injector diameter with respect to the trapping/absorbing layer diameters. Devices with about ten times smaller injector area with respect to the trapping/absorbing layer areas show more than an order of magnitude lower dark current, as well as an order of magnitude higher optical gain compared with devices of same size injector and trapping/absorbing layer areas. Devices with 10 μm injector diameter and 30 μm trapping/absorbing layer diameter show an optical gain of ∼2000 at bias voltage of −3 V with a cutoff wavelength of 1700 nm. Analytical expressions are derived for the electron-injection detector optical gain to qualitatively explain the significance of scaling the injector with respect to the absorber.

On the Sensitivity of Electron-Injection Detectors at Low Light Level

We present the signal-to-noise performance of a short-wave infrared detector, which offers an internal avalanche-free gain. The detector is based on a similar mechanism as the heterojunction phototransistor and takes advantage of a type-II band alignment. Current devices demonstrate a noise-equivalent sensitivity of ~670 photons at 260 K and over a linear dynamic range of 20 dB. While this level of sensitivity is about an order of magnitude better than an ideal p-i-n detector attached to the same low-noise amplifier, it was still limited by the amplifier noise (~2600 electrons root mean square) due to the insufficient device gain. Performance comparison with other SWIR detector technologies demonstrates that the so-called electron-injection detectors offer more than three orders of magnitude better noise-equivalent sensitivity compared with state-of-the-art phototransistors operating at similar temperature.

A proposal for Coulomb assisted laser cooling of piezoelectric semiconductors

Anti-Stokes laser cooling of semiconductors as a compact and vibration-free method is very attractive. While it has achieved significant milestones, increasing its efficiency is highly desirable. The main limitation is the lack of the pristine material quality with high luminescence efficiency. Here, we theoretically demonstrate that the Coulomb interaction among electrons and holes in piezoelectric heterostructures could lead to coherent damping of acoustic phonons; rendering a significantly higher efficiency that leads to the possibility of cooling a broad range of semiconductors.

Open architecture time of flight 3D SWIR camera operating at 150 MHz modulation frequency

In the past two decades 3-D cameras have proven to be one of the next revolutions in machine vision. However, these devices are still an emerging technology with a particularly narrow set of commercially available devices. In this paper, the concept and execution of the first short wavelength infrared (SWIR) time-of-flight (ToF) 3-D camera system operating at a wavelength of 1550 nm is presented. By decoupling the optical and electrical components of the system in an open architecture we not only surpass many of the limitations of an on-chip integrated solution, but also can easily change the imaging device based on the requirements of the application. We achieve modulation frequencies up to 150 MHz, which exceeds the conventional values currently published for other large format modulators by about five times. This increase in the modulation frequency allows for a TOF camera with significantly higher depth resolution, while the open architecture design allows for a highly reconfigurable device that can be modified for specific working conditions.

Exploring Coulomb Interaction in Piezoelectric Materials for Assisting the Laser cooling of Solids

Realization of anti-Stokes cooling requires high enough photon extraction efficiency as well as quantum efficiency, making the implementation of this technique extremely difficult for semiconductors. Here, for the first time, we demonstrate that the Coulomb interaction between photogenerated electron-hole pairs in strong piezoelectric materials such as GaN/InGaN quantum wells could assist laser cooling. By comparing to the cavity back-action mechanism, we also explain how this process depends upon laser detuning with respect to bandgap. To demonstrate the advantage of this method even further, we present simulations by using experimentally reported parameters of GaN and In0.15Ga0.85N, in order to conclude that the net cooling is indeed possible even with current III-nitride growth technology.

Surface plasmon enhancement of photon extraction efficiency by silver nanoparticles: with applications in laser cooling of semiconductors

Laser cooling of materials has been one of the important topics of photonic research during recent years. This is due to the compactness, lack of vibration, and integratibility of this method. Although laser refrigeration has been achieved in rare earth doped glass, no net cooling of semiconductors has been observed yet. The main challenge in this regard is the photon trapping inside the semiconductors, due to its high refractive index, which prevents the extraction of the energy from the material. Various methods have been proposed to overcome photon trapping but they are either not feasible or introduce surface defects. Surface defects increase the surface recombination which absorbs some portion of the photoluminescence and converts it to heat. We exploit the surface plasmons produced in silver nanoparticles to scatter the PL and make the extraction efficiency significantly higher without increasing the surface recombination. This is also important in the semiconductor lighting industry and also for enhancing the performance of solar cells by coupling the sunlight into the higher index absorbing region. Finite difference time domain simulations were used to find the total power extraction efficiency of the silver nanoparticles. It is also proposed for the first time to use the silver nanoparticles as mask for dry etching. The results for both etched and unetched cases were compared with each other. We also refer to a method of silver nanoparticle fabrication which is easy to apply to all kinds of cooling targets and is relatively cheaper than deposition of complex anti-reflective coatings.

Observation of excitonic super-radiance in quantum well structures and its application for laser cooling of solids

Excitons, bound electron-hole pairs, possess distinct physical properties from free electrons and holes that can be employed to improve the performance of optoelectronic devices. In particular, the signatures of excitons are enhanced optical absorption and radiative emission. These characteristics could be of major benefit for the laser cooling of semiconductors, a process which has stringent requirements on the parasitic absorption of incident radiation and the internal quantum efficiency. Here we experimentally demonstrate the dominant ultrafast excitonic super-radiance of our quantum well structure from 78 K up to room temperature. The experimental results are followed by our detailed discussions about the advantages and limitations of this method.

Optomechanical nanoantenna: Far-field control of near-field through mechanical reconfiguration

We have introduce optomechanical nanoantennae, which showed dramatic changes in scattering properties by minuscule changes in geometry. These structures are very compact, with a volume 500 times smaller than free space optical wavelength volume. Through these optical elements, far-field can directly control the near-field of antenna by mechanical reconfiguration. Here we present the functionality of the optomechanical nanoantenna and challenges in fabricating and measuring these devices.