Ryan M. Gelfand

Universality of non-ohmic shunt leakage in thin-film solar cells

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V<∼0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (Ish), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V=0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism.We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu(In,Ga)Se2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (V<∼0.4) and reverse bias, which cannot be explained by the classical solar cell diode model. This parasitic shunt current exhibits non-Ohmic behavior, as opposed to the traditional constant shunt resistance model for photovoltaics. We show here that this shunt leakage (Ish), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V=0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propo...

Opto-mechanical force mapping of deep subwavelength plasmonic modes.

We present spatial mapping of optical force generated near the hot spot of a metal-dielectric-metal bowtie nanoantenna at a wavelength of 1550 nm. Maxwells stress tensor method has been used to simulate the optical force and it agrees well with the experimental data. This method could potentially produce field intensity and optical force mapping simultaneously with a high spatial resolution. Detailed mapping of the optical force is crucial for understanding and designing plasmonic-based optical trapping for emerging applications such as chip-scale biosensing and optomechanical switching.

Quantum-cascade laser integrated with a metal–dielectric–metal-based plasmonic antenna

Optical nanoantennas are capable of enhancing the near-field intensity and confining optical energy within a small spot size. We report a novel metal-dielectric-metal coupled-nanorods antenna integrated on the facet of a quantum-cascade laser. Finite-difference time-domain simulations showed that, for dielectric thicknesses in the range from 10 to 30 nm, peak optical intensity at the top of the antenna gap is 4000 times greater than the incident field intensity. This is 4 times higher enhancement compared to a coupled metal antenna. The antenna is fabricated using focused ion-beam milling and measured using modified scanning probe microscopy. Such a device has potential applications in building mid-IR biosensors.

Nanocavity plasmonic device for ultrabroadband single molecule sensing

We present a new structure that combines a metal-dielectric-metal sandwich with a periodic structure to form a plasmon polariton photonic crystal. Three-dimensional finite-difference time-domain simulations show a clear bandgap in the terahertz regime. We exploited this property by adding a defect to the crystal, which produces a cavity with a quality factor of 23.3 at a wavelength of 3.45 microm. Despite the small Q factor, the ultrasmall sensing volume of 15 zeptoliters produces an extremely large Purcell constant of 4.8x10(6). Compared to photonic crystals with similar Purcell constant, the bandwidth is several orders of magnitude larger, or about 7 THz, ensuring high tolerances to manufacturing parameters, and environmental changes, as well as a high specificity owing to the possibility of broadband spectral fingerprint detection.

Composite Nano-Antenna Integrated With Quantum Cascade Laser

Exploiting optical nano-antennas to boost the near-field confinement within a small volume can increase the limit of molecular detection by an order of magnitude. We present a novel antenna design based on Au-SiO2-Au single nanorod integrated on the facet of a quantum cascade laser operating in the midinfrared region of the optical spectrum. Finite-difference time-domain simulations showed that for sandwiched dielectric thicknesses within the range of 20-30 nm, peak optical intensity at the top of the antenna ends is 500 times greater than the incident field intensity. The device was fabricated using focused ion beam milling. Apertureless midinfrared near-field scanning optical microscopy showed that the device can generate a spatially confined spot within a nanometric size about 12 times smaller than the operating wavelength. Such high intensity, hot spot locations can be used in increasing photon interaction with bio-molecules for sensing applications.

Integrated all-optical infrared switchable plasmonic quantum cascade laser.

We report a type of infrared switchable plasmonic quantum cascade laser, in which far field light in the midwave infrared (MWIR, 6.1 μm) is modulated by a near field interaction of light in the telecommunications wavelength (1.55 μm). To achieve this all-optical switch, we used cross-polarized bowtie antennas and a centrally located germanium nanoslab. The bowtie antenna squeezes the short wavelength light into the gap region, where the germanium is placed. The perturbation of refractive index of the germanium due to the free carrier absorption produced by short wavelength light changes the optical response of the antenna and the entire laser intensity at 6.1 μm significantly. This device shows a viable method to modulate the far field of a laser through a near field interaction.

Signal-to-noise performance of a short-wave infrared nanoinjection imager

We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250 A/W at 1550 nm, -75 degrees C, and 1.5V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e(-)) rms at a frame rate of 1950 frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.

Isolated nanoinjection photo detectors for high-speed and high-sensitivity single-photon detection

Our group has designed and developed a new SWIR single photon detector called the nano-injection detector that is conceptually designed with biological inspirations taken from the rod cells in human eye. The detector couples a nanoscale sensory region with a large absorption volume to provide avalanche free internal amplification while operating at linear regime with low bias voltages. The low voltage operation makes the detector to be fully compatible with available CMOS technologies. Because there is no photon reemission, detectors can be formed into high-density single-photon detector arrays. As such, the nano injection detectors are viable candidates for SPD and imaging at the short-wave infrared band. Our measurements in 2007 proved a high SNR and a stable excess noise factor of near unity. We are reporting on a high speed version of the detector with 4 orders of magnitude enhancement in speed as well as 2 orders of magnitude reduction in dark current (30nA vs. 10 uA at 1.5V).

A Short-Wave Infrared Nanoinjection Imager With 2500 A/W Responsivity and Low Excess Noise

We report on a novel nanoinjection-based short-wave infrared imager, which consists of InGaAs/GaAsSb/InAlAs/InP-based nanoinjection detectors with internal gain. The imager is 320×256 pixels with a 30-m pixel pitch. The test pixels show responsivity values in excess of 2500 A/W, indicating generation of more than 2000 electrons/photon with high quantum efficiency. This amplification is achieved at complementary metal-oxide semiconductor (CMOS) compatible, subvolt bias. The measured excess noise factor F of the hybridized imager pixels is around 1.5 at the responsivity range 1500 to 2000 A/W. The temperature behavior of the internal dark current of the imager pixels is also studied from 300 to 77 K. The presented results show, for the first time, that the nanoinjection mechanism can be implemented in imagers to provide detector-level internal amplification, while maintaining low noise levels and CMOS compatibility.

Towards an Integrated Chip-Scale Plasmonic Biosensor

Biosensing allows researchers to detect tiny amounts of harmful chemicals before they become major threats. These researchers are using advanced optical technologies to develop the biosensor of the future-a plasmonic-based chip-scale device that will allow for compact, inexpensive, ubiquitous and sensitive detection.