Inder J. Bahl

Accurate design of multiport low-noise MMICs up to 20 GHz

This paper presents a novel noise parameter extraction technique for MESFETs. All measurements are done with a 50 ohm source and load which allow the FET to be characterized on wafer easily, accurately and quickly. The noise parameter values are extracted using an in-house model extraction CAD tool. This technique has been validated by comparison to noise parameters measured by using tuners. Additionally, LNAs, distributed and feedback amplifier MMICs have been tested and demonstrated excellent correlations between the measured and simulated noise performance up to 20 GHz.