Insun Jo

Two-Dimensional Phonon Transport in Supported Graphene

Heat Flow in Graphene Unsupported graphene sheets show exceptional thermal transport properties, but are these properties maintained when a graphene sheet is in contact with a substrate? Seol et al. (p. 213; see the Perspective by Prasher) measured the thermal conductivity of graphene supported on silicon dioxide and found that, while the conductivity was considerably lower than that of free-standing graphene, it was still greater than that of metals such as copper. A theoretical model suggested that the out-of-plane flexing vibrations of the graphene play a key role in thermal transport. Thus, graphene may help in applications such as conducting heat away from electronic circuits. The thermal conductivity of graphene supported on silicon dioxide remains high, despite phonon scattering by the substrate. The reported thermal conductivity (κ) of suspended graphene, 3000 to 5000 watts per meter per kelvin, exceeds that of diamond and graphite. Thus, graphene can be useful in solving heat dissipation problems such as those in nanoelectronics. However, contact with a substrate could affect the thermal transport properties of graphene. Here, we show experimentally that κ of monolayer graphene exfoliated on a silicon dioxide support is still as high as about 600 watts per meter per kelvin near room temperature, exceeding those of metals such as copper. It is lower than that of suspended graphene because of phonons leaking across the graphene-support interface and strong interface-scattering of flexural modes, which make a large contribution to κ in suspended graphene according to a theoretical calculation.

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm2/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.

Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

The thermal conductivity of suspended few-layer hexagonal boron nitride (h-BN) was measured using a microbridge device with built-in resistance thermometers. Based on the measured thermal resistance values of 11-12 atomic layer h-BN samples with suspended lengths ranging between 3 and 7.5 μm, the room-temperature thermal conductivity of a 11-layer sample was found to be about 360 W m(-1) K(-1), approaching the basal plane value reported for bulk h-BN. The presence of a polymer residue layer on the sample surface was found to decrease the thermal conductivity of a 5-layer h-BN sample to be about 250 W m(-1) K(-1) at 300 K. Thermal conductivities for both the 5-layer and the 11-layer samples are suppressed at low temperatures, suggesting increasing scattering of low frequency phonons in thin h-BN samples by polymer residue.

Influence of Polymeric Residue on the Thermal Conductivity of Suspended Bilayer Graphene

The thermal conductivity (κ) of two bilayer graphene samples each suspended between two microresistance thermometers was measured to be 620 ± 80 and 560 ± 70 W m(-1) K(-1) at room temperature and exhibits a κ ∝ T(1.5) behavior at temperatures (T) between 50 and 125 K. The lower κ than that calculated for suspended graphene along with the temperature dependence is attributed to scattering of phonons in the bilayer graphene by a residual polymeric layer that was clearly observed by transmission electron microscopy.

Coulomb drag of massless fermions in graphene

Two layers of carriers in close proximity can, in certain conditions favor correlated electron states with no counterpart in the single layer physics. The most notable is the formation of pairs of electrons and holes residing in opposing layers (indirect excitons), which can flow with no dissipation [1]. Such phenomena have been observed in electron-electron or hole-hole double quantum wells in high magnetic fields, when the lowest Landau level in each layer is half-full, and pairs of carriers and vacancies residing in opposite layers form as a result of inter-layer interaction [2], as well as in trapped microcavity polaritons [3]. Graphene, a monolayer of carbon atoms in a honeycomb lattice [4, 5], offers a unique system to investigate electron physics in interacting bilayers. The zero energy band-gap in graphene allows a seamless transition between electrons and holes in each layer, and obviates the large inter-layer electric field required to simultaneously induce electrons and holes in GaAs/AlGaAs bilayers [6]. Moreover, theoretical arguments suggest that a closely spaced electron-hole graphene bilayer favors dipolar superfluidity at elevated temperatures [7]. Here we demonstrate independently contacted graphene bilayers, and investigate the Coulomb drag in this system.

Phonon-interface scattering in multilayer graphene on an amorphous support

Significance The thermal conductivity of suspended graphene can be even higher than the basal-plane value of graphite, which is among the highest found in solids. However, when graphene is in contact with an amorphous material, the thermal conductivity is suppressed considerably. This paper reports that the thickness of multilayer graphene supported on an amorphous substrate needs to be more than 30 atomic layers to recover the graphite thermal conductivity. The finding is explained by long phonon mean free paths in graphite even along the cross-plane direction, and is used to clarify interface leakage of phonons as an important mechanism for the observed suppression. The result is relevant for the application of graphene for electronics, thermal management, and other applications. The recent studies of thermal transport in suspended, supported, and encased graphene just began to uncover the richness of two-dimensional phonon physics, which is relevant to the performance and reliability of graphene-based functional materials and devices. Among the outstanding questions are the exact causes of the suppressed basal-plane thermal conductivity measured in graphene in contact with an amorphous material, and the layer thickness needed for supported or embedded multilayer graphene (MLG) to recover the high thermal conductivity of graphite. Here we use sensitive in-plane thermal transport measurements of graphene samples on amorphous silicon dioxide to show that full recovery to the thermal conductivity of the natural graphite source has yet to occur even after the MLG thickness is increased to 34 layers, considerably thicker than previously thought. This seemingly surprising finding is explained by long intrinsic scattering mean free paths of phonons in graphite along both basal-plane and cross-plane directions, as well as partially diffuse scattering of MLG phonons by the MLG-amorphous support interface, which is treated by an interface scattering model developed for highly anisotropic materials. Based on the phonon transmission coefficient calculated from reported experimental thermal interface conductance results, phonons emerging from the interface consist of a large component that is scattered across the interface, making rational choice of the support materials a potential approach to increasing the thermal conductivity of supported MLG.

Effects of Surface Band Bending and Scattering on Thermoelectric Transport in Suspended Bismuth Telluride Nanoplates

A microdevice was used to measure the in-plane thermoelectric properties of suspended bismuth telluride nanoplates from 9 to 25 nm thick. The results reveal a suppressed Seebeck coefficient together with a general trend of decreasing electrical conductivity and thermal conductivity with decreasing thickness. While the electrical conductivity of the nanoplates is still within the range reported for bulk Bi2Te3, the total thermal conductivity for nanoplates less than 20 nm thick is well below the reported bulk range. These results are explained by the presence of surface band bending and diffuse surface scattering of electrons and phonons in the nanoplates, where pronounced n-type surface band bending can yield suppressed and even negative Seebeck coefficient in unintentionally p-type doped nanoplates.

Basal-plane thermal conductivity of few-layer molybdenum disulfide

We report the in-plane thermal conductivity of suspended exfoliated few-layer molybdenum disulfide (MoS2) samples that were measured by suspended micro-devices with integrated resistance thermometers. The obtained room-temperature thermal conductivity values are (44–50) and (48–52) W m−1 K−1 for two samples that are 4 and 7 layers thick, respectively. For both samples, the peak thermal conductivity occurs at a temperature close to 120 K, above which the thermal conductivity is dominated by intrinsic phonon-phonon scattering although phonon scattering by surface disorders can still play an important role in these samples especially at low temperatures.

Low-frequency acoustic phonon temperature distribution in electrically biased graphene.

On the basis of scanning thermal microscopy (SThM) measurements in contact and lift modes, the low-frequency acoustic phonon temperature in electrically biased, 6.7-9.7 μm long graphene channels is found to be in equilibrium with the anharmonic scattering temperature determined from the Raman 2D peak position. With ∼100 nm scale spatial resolution, the SThM reveals the shifting of local hot spots corresponding to low-carrier concentration regions with the bias and gate voltages in these much shorter samples than those exhibiting similar behaviors in the infrared emission maps.

Direct measurement of the fermi energy in graphene using a double-layer heterostructure

We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system by employing a double-layer heterostructure. We illustrate this method by using a graphene double layer to probe the Fermi energy as a function of carrier density in monolayer graphene, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.