Isak Engquist

An Organic Mixed Ion–Electron Conductor for Power Electronics

A mixed ionic–electronic conductor based on nanofibrillated cellulose composited with poly(3,4‐ethylene‐dioxythiophene):poly(styrene‐sulfonate) along with high boiling point solvents is demonstrated in bulky electrochemical devices. The high electronic and ionic conductivities of the resulting nanopaper are exploited in devices which exhibit record values for the charge storage capacitance (1F) in supercapacitors and transconductance (1S) in electrochemical transistors.

Spatial control of p-n junction in an organic light-emitting electrochemical transistor.

Low-voltage-operating organic electrochemical light-emitting cells (LECs) and transistors (OECTs) can be realized in robust device architectures, thus enabling easy manufacturing of light sources using printing tools. In an LEC, the p-n junction, located within the organic semiconductor channel, constitutes the active light-emitting element. It is established and fixated through electrochemical p- and n-doping, which are governed by charge injection from the anode and cathode, respectively. In an OECT, the electrochemical doping level along the organic semiconducting channel is controlled via the gate electrode. Here we report the merger of these two devices: the light-emitting electrochemical transistor, in which the location of the emitting p-n junction and the current level between the anode and cathode are modulated via a gate electrode. Light emission occurs at 4 V, and the emission zone can be repeatedly moved back and forth within an interelectrode gap of 500 μm by application of a 4 V gate bias. In transistor operation, the estimated on/off ratio ranges from 10 to 100 with a gate threshold voltage of -2.3 V and transconductance value between 1.4 and 3 μS. This device structure opens for new experiments tunable light sources and LECs with added electronic functionality.

Order/Disorder Gradients of n-Alkanethiols on Gold

This paper explores the interfacial properties of one-dimensional molecular gradients of alkanethiols (HS‐(CH2)n ‐ X) on gold. The kinetics and thermodynamics of monolayer formation are important issues for these types of mixed molecular assemblies. The influence of chain length difference on the contact angles with hexadecane (HD), ua and ur, and the hysteresis, has been studied by employing alkanethiols HS‐(CH2)n‐CH3, with n 9, 11, 13, 15 and 17, in the preparation of the self-assembled monolayers (SAM) gradients. The contact angles with hexadecane, at the very extreme ends of the gradients, show characteristic values of a highly ordered CH3-like assembly: ua 45‐50°. In the middle of the gradients ua drops noticeably and exhibits values representative for CH2-like polymethylenes, ua20‐30°, indicating a substantial disordering of the protruding chains of the longer component in the gradient assembly. As expected, the exposure of CH2-groups to the probing liquid increases with increasing differential chain length of the two n-alkanethiol used, in this case eight methylene units. However, the contact angles always display a non-zero value which means that even at a chain length difference of eight methylene units there is a substantial exposure of methyl (CH3) groups to the probing liquid. With infrared reflection-absorption spectroscopy (IRAS) we have monitored the structural behavior of the polymethylene chains along the gradient. We find complementary evidence for disordered chains in the gradient region, and the IRAS results correlate well with the contact angle measurements.

All-printed diode operating at 1.6 GHz.

Significance Printed electronic labels and stickers are expected to define future outposts of the communication web, as remote sensors, detectors, and as surveillance technology, within the Internet-of-things concept. It is crucial to couple such technology with standard communication systems that commonly operate at gigahertz frequencies. To accomplish this, ultra–high-frequency rectification components manufactured in a low-temperature printing process are necessary. Here, we report an all-printed diode operating above 1 GHz, achieved using a combination of Si and NbSi2 microparticles. The diode was integrated with a flexible antenna and a printed electrochromic display indicator to successfully demonstrate remote transfer of signal and power from a standard Global System for Mobile Communications phone to the resulting e-label. Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications.

Vertical polyelectrolyte-gated organic field-effect transistors

Short-channel, vertically structured organic transistors with a polyelectrolyte as gate insulator are demonstrated. The devices are fabricated using low-resolution, self-aligned, and mask-free photolithography. Owing to the use of a polyelectrolyte, our vertical electrolyte-gated organic field-effect transistors (VEGOFETs), with channel lengths of 2.2 and 0.7 μm, operate at voltages below one volt. The VEGOFETs show clear saturation and switch on and off in 200 μs. A vertical geometry to achieve short-transistor channels and the use of an electrolyte makes these transistors promising candidates for printed logics and drivers with low operating voltage.

Double-Gate Light-Emitting Electrochemical Transistor: Confining the Organic p–n Junction

In conventional light-emitting electrochemical cells (LECs), an off-centered p-n junction is one of the major drawbacks, as it leads to exciton quenching at one of the charge-injecting electrodes and results in performance instability. To combat this problem, we have developed a new device configuration, the double-gate light-emitting electrochemical transistor (DG-LECT), in which the location of the light-emitting p-n junction can be precisely defined via the position of the two gate terminals. Based on a planar LEC structure, two gate electrodes made from an electrochemically active conducting polymer are employed to predefine the p- and n-doped area of the light-emitting polymer. Thus, a p-n junction is formed in between the p-doped and n-doped regions. We demonstrate a homogeneous and centered p-n junction as well as other predefined junction patterns in these DG-LECT devices. Additionally, we report an electrical model that explains the operation of the DG-LECTs. The DG-LECT device provides a new tool to study the fundamental physics of LECs, as it dissects the key working process of LEC into decoupled p-doping, n-doping, and electroluminescence.

Electrochemical characterisation of mixed monolayer assemblies of thiol analogues of cholesterol and fatty acids on gold

Abstract A self-assembled monolayer (SAM) on gold prepared from a binary mixture of a thiol analogue of cholesterol (thiocholesterol, TC) and a functionalised alkanethiol (11-mercaptoundecanoic acid, MUA) has been investigated by voltammetry. The voltammetric results are in agreement with previously reported spectroscopic data and show that the geometric arrangement and composition of the molecules in the mixed monolayer controls the heterogeneous electron transfer process of Fe(CN)63− across the assembly. The quantitative description of the influence of TC on the electron transfer rate constant is given through Tafel plots. At the oure MUA SAM electrode, the electron transfer is governed by penetration through the monolayer. The introduction of TC into the SAMs creates defects giving rise to diffusion controlled electron transfer in addition to penetration. By raising the TC content the electron transfer rate constant increases due to diffusion. This behaviour can be explained by a model in which the assembly goes from a penetrative but defect-free film barrier (pure MUA SAM) via a structure with defects in the mixed composition regime to a defect-rich structure consisting of an array of ultramicroelectrodes (pure TC SAM).

Structural Characterization and Biocompatible Applications of Graphene Nanosheets for Miniaturization of Potentiometric Cholesterol Biosensor

The potentiometric cholesterol biosensor based on graphene nanosheets has been successfully miniaturized. Cholesterol oxidase (ChOx) has been immobilized onto graphene nanosheets exfoliated on copp ...

INFRARED CHARACTERIZATION OF AMORPHOUS AND POLYCRYSTALLINE D2O ICE ON CONTROLLED WETTABILITY SELF-ASSEMBLED ALKANETHIOLATE MONOLAYERS

Infrared reflection–absorption spectroscopy has been used to characterize thin overlayers (1–200 A) of D2O ice deposited in UHV onto a set of self-assembled alkanethiolate monolayers (SAMs) of controlled wettabilities on gold. The SAMs were prepared from a series of controlled composition, mixed solutions of HS(CH2)15CH3 and HS(CH2)16OH, making it possible to investigate the whole wettability range from θ≈0° to θ=112°, where θ is the static contact angle with water. Dosing of D2O and infrared measurements were carried out at selected sample temperatures between 82 and 150 K. Experimental spectra of ice overlayers recorded below 100 K on all SAM substrates are in good agreement with simulated reflection–absorption spectra, derived from the optical constants of amorphous ice. This agreement allows accurate film thickness determination. In contrast, lack of correspondence in spectral signature is noted between the spectra of annealed films and simulated polycrystalline (or amorphous) ice spectra. We interpre...

Bias stress effect in polyelectrolyte-gated organic field-effect transistors

A main factor contributing to bias stress instability in organic transistors is charge trapping of mobile carriers near the gate insulator-semiconductor interface into localized electronic states. In this paper, we study the bias stress behavior in low-voltage (p-type) polyelectrolyte-gated organic field effect transistors (EGOFETs) at various temperatures. Stressing and recovery in these EGOFETs are found to occur six orders of magntiude faster than typical bias stress/recovery reported for dielectric-gated OFETs. The mechanism proposed for EGOFETs involves an electron transfer reaction between water and the charged semiconductor channel that promotes the creation of extra protons diffusing into the polyelectrolyte.