J. A. Stern

Fabrication of Nb/Al-N/sub x//NbTiN junctions for SIS mixer applications

We discuss fabrication and characteristics of superconductor-insulator-superconductor (SIS) junctions which typically exhibit a 3.5 mV sum-gap voltage. Junctions have a sub-gap to normal state resistance ratio of R/sub SG//R/sub N/=27 for resistance-area products down to R/sub N/A=8 /spl Omega/ /spl mu/m/sup 2/ and high quality junctions have been produced with RNA products as low as 4 /spl Omega/ /spl mu/m/sup 2/. The device structure incorporates a Nb base electrode, a tunnel barrier formed by plasma nitridation of a thin Al proximity layer, and a NbTiN counter-electrode. Results for all Nb junctions with high current density aluminum-nitride barriers are also shown. Nitridation of the aluminum layer is investigated by control of the dc floating potential on a separate rf driven electrode in the vacuum process chamber. Devices are integrated to a mixer antenna structure incorporating NbTiN as a ground plane. The wire circuit layer can be either normal metal or NbTiN. Annealing results show improved I-V characteristics with increased RNA products. Recent receiver measurements employing these junctions exhibit low noise performance up to 900 GHz.

Low-noise slot antenna SIS mixers

We describe quasi-optical SIS mixers operating in the submillimeter band (500-750 GHz) which have very low noise, around 5 h/spl nu//k/sub B/ for the double-sideband receiver noise temperature. The mixers use a twin-slot antenna, Nb/Al-Oxide/Nb tunnel junctions fabricated with optical lithography, a two-junction tuning circuit, and a silicon hyperhemispherical lens with a novel antireflection coating to optimize the optical efficiency. We have flown a submillimeter receiver using these mixers on the Kuiper Airborne Observatory, and have detected a transition of H/sub 2//sup 18/O at 745 GHz. This directly confirms that SIS junctions are capable of low-noise mixing above the gap frequency.<<ETX>>

LOW-LOSS NbTiN FILMS FOR THz SIS MIXER TUNING CIRCUITS

Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices.

Low Noise 1 THz–1.4 THz Mixers Using Nb/Al-AlN/NbTiN SIS Junctions

We present the development of a low noise 1.2 THz and 1.4 THz SIS mixers for heterodyne spectrometry on the Stratospheric Observatory For Infrared Astronomy (SOFIA) and Herschel Space Observatory. This frequency range is above the limit for the commonly used Nb quasi particle SIS junctions, and a special type of hybrid Nb/AlN/NbTiN junctions has been developed for this project. We are using a quasi-optical mixer design with two Nb/AlN/NbTiN junctions with an area of 0.25. The SIS junction tuning circuit is made of Nb and gold wire layers. At 1.13 THz the minimum SIS receiver uncorrected noise temperature is 450 K. The SIS receiver noise corrected for the loss in the LO coupler and in the cryostat optics is 350-450 K across 1.1-1.25 THz band. The receiver has a uniform sensitivity in a full 4-8 GHz IF band. The 1.4 THz SIS receiver test at 1.33-1.35 THz gives promising results, although limited by the level of available LO power. Extrapolation of the data obtained with low LO power level shows a possibility to reach 500 K DSB receiver noise using already existing SIS mixer.

A Low Noise NbTiN-Based 850 GHz SIS Receiver for the Caltech Submillimeter Observatory

We have developed a niobium titanium nitride (NbTiN) based superconductor-insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.

Terahertz frequency receiver instrumentation for Herschel's heterodyne instrument for far infrared (HIFI)

The Heterodyne Instrument for Far Infrared (HIFI) on ESAs Herschel Space Observatory is comprised of five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. Two fixed tuned local oscillator sub-bands are derived from a common synthesizer to provide the front-end frequency coverage for each channel. The local oscillator unti will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, and novel material systems in the SIS mixtures. The National Aeronautics and Space Administrations Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the highest frequency (1650-1910 GHz) HEB mixers, local oscillators for the three highest frequency receivers as well as W-band power amplifiers, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. The current state of the art for each of these devices is presented along with a programmatic view of the development effort.

Development of SIS Mixers for 1 THz

SIS heterodyne mixer technology based on niobium tunnel junctions has now been pushed to frequencies over 1 THz, clearly demonstrating that the SIS junctions are capable of mixing at frequencies up to twice the energy gap frequency (4(Delta) /h). However, the performance degrades rapidly above the gap frequency of niobium (2(Delta) /h approximately equals 700 GHz) due to substantial ohmic losses in the on-chip tuning circuit. To solve this problem, the tuning circuit should be fabricated using a superconducting film with a larger energy gap, such as NbN; unfortunately, NbN films often have a substantial excess surface resistance in the submillimeter band. In contrast, the SIS mixer measurements we present in this paper indicate that the losses for NbTiN thin films can be quite low.

Development of 1.25 THz SIS mixer for Herschel Space Observatory

We summarize the development and the delivery of two SIS mixers for the 1.1-1.25 THz band of the heterodyne spectrometer of Herschel Observatory (HSO). The quasi-optical SIS mixer has two Nb/AlN/NbTiN junctions with the area of 0.25 um2. The Josephson critical current density in the junction is 30-50 kA/cm2. The tuning circuit integrated with SIS junction has the base electrode of Nb and a gold wire layer. With the new SIS mixers the test receiver maximum Y factor is 1.41. The minimum receiver uncorrected DSB noise temperature is 450 K. The SIS receiver noise corrected for the loss in the optics is 350-450 K across the 1100-1250 GHz band. The receiver has a uniform sensitivity in the full IF range of 4-8 GHz. The sub-micron sized SIS junction shape is optimized to ease the suppression of the Josephson current, and the receiver operation is stable. The measured mixer beam pattern is symmetrical and, in a good agreement with the requirements, has the f/d =4.25 at the central frequency of the operation band. The minimum DSB SIS receiver noise is close to 6 hv/k, the lowest value achieved thus far in the THz frequencies range.

Quasi-optical Josephson-junction oscillator arrays

Josephson junctions are natural voltage-controlled oscillators capable of generating submillimeter-wave-length radiation, but a single junction usually can produce only 100 nW of power and often has a broad spectral linewidth. The authors are investigating 2-D quasi-optical power combining arrays of 10/sup 3/ and 10/sup 4/ NbN/MgO/NbN and Nb/Al-AlO/sub x//Nb junctions to overcome these limitations. The junctions are DC biased in parallel and are distributed along interdigitated lines. The arrays couple to a resonant mode of a Fabry-Perot cavity to achieve mutual phase-locking. The array configuration has a relatively low impedance, which should allow the capacitance of the junctions to be tuned out at the oscillation frequency.<<ETX>>

Development of Low Noise THz SIS Mixer Using an Array of Nb/Al-AlN/NbTiN Junctions

We report the development of a low noise and broadband SIS mixer aimed for 1 THz channel of the Caltech Airborne Submillimeter Interstellar Medium Investigations Receiver (CASIMIR), designed for the Stratospheric Observatory for Infrared Astronomy, (SOFIA). The mixer uses an array of two 0.24 mum2 Nb/Al-AlN/NbTiN SIS junctions with the critical current density of 30-50 kA/cm2 . An on-chip double slot planar antenna couples the mixer circuit with the telescope beam. The mixer matching circuit is made with Nb and gold films. The mixer IF circuit is designed to cover 4-8 GHz band. A test receiver with the new mixer has a low noise operation in 0.87-1.12 THz band. The minimum receiver noise measured in our experiment is 353 K (Y = 1.50). The receiver noise corrected for the loss in the LO injection beam splitter is 250 K. The combination of a broad operation band of about 250 GHz with a low receiver noise makes the new mixer a useful element for application at SOFIA.