J. De Bruyn

Mossbauer study of the amorphous layer in ion-implanted diamond

Abstract The structure of the amorphous layer in ion implanted diamond has been investigated by Mossbauer spectroscopy, using the nuclear probes 133 Cs, 125 Te and 129 I. A strong resemblance is found in the spectra of ion implanted diamond and graphite, which leads to the conclusion that the C coordination in amorphous diamond is predominantly sp 2 -like. Debye-Waller factor measurements of 133 Cs in diamond and graphite allow to us point out some characteristic differences between both lattice surroundings. It turns out that “amorphous” diamond is a more compact lattice than graphite in pyrolytic or polycrystalline form.

Observation of the amorphization process in diamond by Mössbauer spectroscopy

Abstract Mossbauer spectra of 133 Cs implanted in diamond show the growth of an amorphous layer with increasing ion dose. The annealing of this layer after heat treatment has also been observed.

Mössbauer study of the disorder in crystalline and amorphous Ge implanted with 125mTe ions

Abstract Crystalline and amorphous Ge and amorphous Ge 0.8 Te 0.2 were implanted with 125m Te. The Mossbauer spectra showed quadrupole split doublets. The isomer shift and quadrupole split values suggested that the atomic configuration around Te after implantation in Ge is similar to that of amorphous GeTe.

Laser and thermal annealing of Te-implanted silicon

Abstract Laser annealing of Te-implanted silicon results in a drastic change in the relative intensity of the two Mossbauer resonance lines. These results undoubtedly indicate that a reassignment of the lines has to be made.

Amorphization of tellurium by ion-implantation

A Mossbauer study was performed on 125Te after implantation into Te single crystals, held at different temperatures. It is shown that during implantation at liquid nitrogen temperature amorphization of the target occurs. The role of the target temperature in the Naguib and Kelly criterion for amorphization is discussed.

Mössbauer Spectroscopy on the Amorphous Layer in Ion Implanted Diamond

The structure of the amorphous layer in ion implanted diamond has been investigated with the Mossbauer probes 133Cs, 125Te and 129I. A strong resemblance is found between the nearest-neighbour coordination in amorphous diamond and ion implanted graphite.

Mossbauer Spectroscopy Study of the Amorphization of Tellurium by Ion Implantation

125 Te was implanted into Te single crystals, held at different temperatures, and studied by Mossbauer Spectroscopy. It is shown that amorphization of the target occurs during implantation at liquid nitrogen temperature. The role of the target temperature in the Naguib and Kelly criterion for amorphization is discussed.