J. F. Jurado
National University of Colombia
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Featured researches published by J. F. Jurado.
XXII INTERNATIONAL CONFERENCE ON RAMAN SPECTROSCOPY | 2010
J. F. Jurado; C. Vargas Hernández; J. E. Sánchez; F. Racedo Niebles
GaAs, GaAs:Si and GaAs:C films were deposited on GaAs substrates by Metal Organic Chemical Vapor Deposition( MOCVD) technique. The vibrational study of the heterostructures was performed by μ‐Raman technique, and measurements were made at different temperatures using a sample holder with a micro‐heater included within it. The spectral information was used to determine the strain caused in GaAs heterostructure because of the inclusion Si(a = 5.43095A) and C(a = 3.56683A) [1]. Raman spectra as a function of temperature show a shift towards lower energy values as temperature increases. The new normal modes of vibration that appears, and the corresponding shift is associated with the effort tensile in the lattice caused by the difference in thermal expansion coefficients between film and substrate [2], this tension has been bigger for the film doped with carbon.
Scientia et technica | 2008
G Francy Nelly Jimenez; Carlos Vargas Hernández; J. F. Jurado
It is presented a biographic revision of the photoreflectance technique (PR) since its theoretical foundation to some applications. The PR is a non destructive modulation technique and does not require previous sample preparation. It has been employed to study semiconductor electronic structure and to determine the critical points energy which gives information of strain in the sample, among other.
Scientia Et Technica | 2006
J. F. Jurado; Carlos Vargas Hernández; Alexander Ruden Muñoz
Presentamos resultados de medidas de conductividad utilizando la tecnica de espectroscopia de impedancias (IE) en el rango de frecuencia de 5 Hz a 100 kHz y por debajo de la temperatura ambiente para el compuesto policristalino Nd0.5Ca0.5MnO3. Este compuesto presenta usualmente una transicion de metalaislante cuando este es enfriado por debajo de la temperatura de Curie, fenomeno asociado al ordenamiento de carga (CO), siendo este un ordenamiento espacial real de los cationes Mn+3/Mn+4 en sub-redes alternadas. Medidas de la parte real de la conductividad en funcion con la frecuencia, σ`(ω), para diferentes temperatura, mostraron una dependencia de tipo potencial para la region de alta frecuencia, usualmente denominado ley universal de Jonscher`s, Aωn, siendo A y n parametros ligeramente dependientes de la temperatura. Este comportamiento evidencia que la conduccion en estos sistemas son termicamente activados. Es decir, la frecuencia de intento de salto de los portadores que intervienen en la conduccion es funcion de la temperatura, ωp(T). Por otro lado, en el formalismo de modulo dielectrico M*, revelo que la conductividad ac presenta un de tipo no -Debye para el rango de temperatura 230 – 290K.
Scientia Et Technica | 2005
Carlos Vargas Hernández; Profesor Asociado; Francy Nelly; G Jimenez; J. F. Jurado
It presents the results obtained of the optical characterization by means of Photoreflectance and Auger of CdTe/GaAs(001) heterostructures grown by molecular beam epitaxy (MBE). CdTe films were grown on GaAs substrates with thickness around 100 A. each one of these films was exposed to a Zn or Se flux separately. The changes in the lineshape of the photoreflectance, as well as the increase in the critical points E0 and E0+∆0 intensity in GaAs spectums are indicating the reactivity in the CdTe/GaAs- hetreroestructure surface.
Dyna | 2016
Fernando Jurado-Lasso; Nathaly Jurado-Lasso; Jaime Ortiz; J. F. Jurado
Dyna | 2012
J. F. Jurado; Carlos Vargas Hernández; Rubén Antonio Vargas
Revista Colombiana de Física | 2012
Alejandra Londoño Calderón; J. F. Jurado; Carlos Vargas Hernández
Archive | 2012
J. F. Jurado; Carlos Vargas Hernández; Rubén Antonio Vargas
Dyna | 2012
J. F. Jurado; Carlos Vargas Hernández; Rubén Antonio Vargas
Revista Colombiana de Física | 2011
C. A. Duque; A. Londoño Calderón; J. F. Jurado; C. Vargas-Hernández; E. Tangarife