J. J. Henderson

Magnetic quantum tunneling: insights from simple molecule-based magnets

This perspectives article takes a broad view of the current understanding of magnetic bistability and magnetic quantum tunneling in single-molecule magnets (SMMs), focusing on three families of relatively simple, low-nuclearity transition metal clusters: spin S = 4 Ni(II)(4), Mn(III)(3) (S = 2 and 6) and Mn(III)(6) (S = 4 and 12). The Mn(III) complexes are related by the fact that they contain triangular Mn(III)(3) units in which the exchange may be switched from antiferromagnetic to ferromagnetic without significantly altering the coordination around the Mn(III) centers, thereby leaving the single-ion physics more-or-less unaltered. This allows for a detailed and systematic study of the way in which the individual-ion anisotropies project onto the molecular spin ground state in otherwise identical low- and high-spin molecules, thus providing unique insights into the key factors that control the quantum dynamics of SMMs, namely: (i) the height of the kinetic barrier to magnetization relaxation; and (ii) the transverse interactions that cause tunneling through this barrier. Numerical calculations are supported by an unprecedented experimental data set (17 different compounds), including very detailed spectroscopic information obtained from high-frequency electron paramagnetic resonance and low-temperature hysteresis measurements. Comparisons are made between the giant spin and multi-spin phenomenologies. The giant spin approach assumes the ground state spin, S, to be exact, enabling implementation of simple anisotropy projection techniques. This methodology provides a basic understanding of the concept of anisotropy dilution whereby the cluster anisotropy decreases as the total spin increases, resulting in a barrier that depends weakly on S. This partly explains why the record barrier for a SMM (86 K for Mn(6)) has barely increased in the 15 years since the first studies of Mn(12)-acetate, and why the tiny Mn(3) molecule can have a barrier approaching 60% of this record. Ultimately, the giant spin approach fails to capture all of the key physics, although it works remarkably well for the purely ferromagnetic cases. Nevertheless, diagonalization of the multi-spin Hamiltonian matrix is necessary in order to fully capture the interplay between exchange and local anisotropy, and the resultant spin-state mixing which ultimately gives rise to the tunneling matrix elements in the high symmetry SMMs (ferromagnetic Mn(3) and Ni(4)). The simplicity (low-nuclearity, high-symmetry, weak disorder, etc.) of the molecules highlighted in this study proves to be of crucial importance. Not only that, these simple molecules may be considered among the best SMMs: Mn(6) possesses the record anisotropy barrier, and Mn(3) is the first SMM to exhibit quantum tunneling selection rules that reflect the intrinsic symmetry of the molecule.

Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets

Three-terminal single-electron transistor devices utilizing Al∕Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets (SMMs). The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1–3nm gaps between which the SMM can be situated. Conductance through a single Mn12 (3-thiophenecarboxylate) displays the Coulomb blockade effect with several excitations within ±40meV.

Single-Molecule-Magnet Behavior and Spin Changes Affected by Crystal Packing Effects

Five Mn 3Zn 2 heterometallic complexes have been synthesized and structurally and magnetically characterized. Spin ground states up to S = 6 have been observed for these complexes and are shown to depend on the cocrystallizing cation and on the terminal ligand. Large axial zero-field interactions ( D = -1.16 K) are the result of near-parallel alignment of the Mn (III) Jahn-Teller axes. High-frequency electron paramagnetic resonance, single-crystal magnetization hysteresis, and alternating current susceptibility measurements are presented to characterize [NEt 4] 3[Mn 3Zn 2(salox) 3O(N 3) 6X 2] [X (-) = Cl (-) ( 1), Br (-) ( 2)] and [AsPh 4] 3[Mn 3Zn 2(salox) 3O(N 3) 6Cl 2] ( 3) and reveal that 1 and 2 are single-molecule magnets ( U eff = 44 K), while 3 is not.

Ferromagnetic ordering and simultaneous fast magnetization tunneling in a Ni4 single-molecule magnet.

Low-temperature heat capacity and oriented single-crystal field-cooled and zero-field-cooled magnetization data for the single-molecule magnet [Ni(hmp)(dmb)Cl](4) are presented that indicate the presence of ferromagnetic ordering at approximately 300 mK, which has little effect on the magnetization relaxation rates.

Propagation of high-frequency surface plasmons on gold

Propagation of surface plasmons on gold in the range 2.8-3.5 eV over 0.1-1.6 μm distances was characterized by cathodoluminescence spectroscopy. Surface plasmons were excited by an electron beam near a grating milled in the gold. The spectra of outcoupled radiation reveal increasingly strong propagation losses as surface plasmon energy increases above 2.8 eV, but little effect in the range 1.6-2.8 eV. These results are in partial agreement with theoretical expectations.

High-frequency microstrip cross resonators for circular polarization electron paramagnetic resonance spectroscopy

In this article we discuss the design and implementation of a novel microstrip resonator which allows absolute control of the microwaves polarization degree for frequencies up to 30 GHz. The sensor is composed of two half-wavelength microstrip line resonators, designed to match the 50 Omega impedance of the lines on a high dielectric constant GaAs substrate. The line resonators cross each other perpendicularly through their centers, forming a cross. Microstrip feed lines are coupled through small gaps to three arms of the cross to connect the resonator to the excitation ports. The control of the relative magnitude and phase between the two microwave stimuli at the input ports of each line allows for tuning the degree and type of polarization of the microwave excitation at the center of the cross resonator. The third (output) port is used to measure the transmitted signal, which is crucial to work at low temperatures, where reflections along lengthy coaxial lines mask the signal reflected by the resonator. Electron paramagnetic resonance spectra recorded at low temperature in an S=5/2 molecular magnet system show that 82% fidelity circular polarization of the microwaves is achieved over the central area of the resonator.

On-chip integration of high-frequency electron paramagnetic resonance spectroscopy and Hall-effect magnetometry

A sensor that integrates high-sensitivity micro-Hall effect magnetometry and high-frequency electron paramagnetic resonance spectroscopy capabilities on a single semiconductor chip is presented. The Hall-effect magnetometer (HEM) was fabricated from a two-dimensional electron gas GaAsAlGaAs heterostructure in the form of a cross, with a 50 x 50 microm2 sensing area. A high-frequency microstrip resonator is coupled with two small gaps to a transmission line with a 50 Omega impedance. Different resonator lengths are used to obtain quasi-TEM fundamental resonant modes in the frequency range 10-30 GHz. The resonator is positioned on top of the active area of the HEM, where the magnetic field of the fundamental mode is largest, thus optimizing the conversion of microwave power into magnetic field at the sample position. The two gaps coupling the resonator and transmission lines are engineered differently--the gap to the microwave source is designed to optimize the loaded quality factor of the resonator (Q<or=150) while the gap for the transmitted signal is larger. This latter gap minimizes losses and prevents distortion of the resonance while enabling measurement of the transmitted signal. The large filling factor of the resonator permits sensitivities comparable to that of high-quality factor resonant cavities. The integrated sensor enables measurement of the magnetization response of micron scale samples upon application of microwave fields. In particular, the combined measurement of the magnetization change and the microwave power under cw microwave irradiation of single crystal of molecular magnets is used to determine of the energy relaxation time of the molecular spin states. In addition, real-time measurements of the magnetization dynamics upon application of fast microwave pulses are demonstrated.

Geometrical control of the magnetization direction in high aspect-ratio PdNi ferromagnetic nanoelectrodes

We present a study of electron-beam evaporated

Nanomodulation of Molecular Nanomagnets

{\text{Pd}}_{0.4}{\text{Ni}}_{0.6}

Manifestation of Spin Selection Rules on the Quantum Tunneling of Magnetization in a Single-Molecule Magnet

alloy thin films by means of ferromagnetic resonance measurements on extended films of varying thickness and anisotropic magnetoresistance measurements of lithographically patterned high aspect-ratio ferromagnetic electrodes, respectively. The results reveal that the direction of the magnetization strongly depends on the electrode lateral dimensions, transitioning from in-plane magnetization for extended films to out-of-the-plane magnetization for electrode widths below 2--3 microns, reaching