J.L. Muñoz-Gamarra

Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology

We report experimental demonstrations of contact-mode nano-electromechanical switches obtained using a capacitor module based on metal-insulator-metal configuration of a standard commercial complementary metal oxide semiconductor technology. The developed 2 terminals Titanium Nitride switches operate at low voltages (∼10 V) thanks to its small gap (27 nm), showing an excellent ION/IOFF ratio (104) and abrupt behavior (5 mV/decade, one decade of current change is achieved with a 5 mV voltage variation). A switch configuration is also presented where using two electrodes three different contact mode states can be obtained, adding functionalities to mechanical switches configurations.

A fully integrated programmable dual-band RF filter based on electrically and mechanically coupled CMOS-MEMS resonators

In this paper, a novel fully integrated CMOS-MEMS filter implemented on a commercial CMOS technology is presented. The combination of mechanical and electrical coupling is used to enhance the response of the band pass filter. In particular, a 20 dB shape factor as low as 2 and a 35 dB stopband rejection are achieved. Moreover, the topology of the device allows obtaining a dual-bandpass filter behavior, presenting a tunable bandwidth and a deep notch between bands. Results show a dual-band filter with a 22 dB inner stopband rejection, center frequencies at 27.5 and 27.8 MHz, respectively, and a 0.6% relative bandwidth.

Analysis of a MEMS-based ring oscillator

This work introduces a MEMS oscillator composed exclusively of mechanical switches as logic components. The electromechanical model of the system is developed and the conditions for a periodic response are established.

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

Linear operation of a 11MHz CMOS-MEMS resonator

In this work, the characterization of the first lateral in-plane flexural mode DETF (Double Ended Tuning Fork) MEMS resonator integrated monolithically in a CMOS 0.35µm technology is done. This characterization is done with the same resonator stand-alone and with an integrated CMOS amplifier to obtain the handling dynamic range of the applied voltage (dc bias and ac signal) for a linear behavior of the resonator.

UHF CMOS-MEMS bulk acoustic wave resonator

This paper presents a UHF CMOS MEMS resonator working at 384MHz at its bulky mechanical mode. The novel topology proposed allows us to design the resonator taking into account the coupling area of the movable resonator as an important parameter in the design. The structure is fabricated using a commercial CMOS technology. This fact allows to integrate directly the microelectromechanical structure with the electronic. This work presents the measurement of both, the stand alone resonator and the resonator with an amplification circuitry.