J.M. Clamagirand

TiS3 Transistors with Tailored Morphology and Electrical Properties

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.

Titanium trisulfide (TiS3) : A 2D semiconductor with quasi-1D optical and electronic properties

We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in qualitative agreement with the observed experimental optical transmittance.

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

This work was supported by the Netherlands Organization for Scientific Research (NWO/FOM). AJM-M acknowledges the financial support of MINISTERIO DE CIENCIA E INNOVACION (MICINN) (Spain) through the scholarship BES2012–057346. R.D’A and RB acknowledge financial support by the DYN-XC-TRANS (Grant No. FIS2013-43130-P), NanoTHERM (Grant No. CSD2010- 00044), and SElecT-DFT (FIS2016-79464-P) of the Ministerio de Economia y Competitividad (MINECO), and Grupo Consolidado UPV/EHU del Gobierno Basco (Grant No. IT578-13). RB acknowledges the financial support of the Ministerio de Educacion, Cultura y Deporte (Grant No. FPU12/01576). AC-G acknowledges financial support from the European Commission under the Graphene Flagship, contract CNECTICT-604391, from the MINECO (Ramon y Cajal 2014 program, RYC-2014-01406) and from the MICINN (MAT2014-58399-JIN). MIRE Group thanks MINECO (MAT2015-65203R) for financial support. E Flores also acknowledges the Mexican National Council for Science and Technology (CONACyT).