J. M. Llorens

Silicon nanowires: where mechanics and optics meet at the nanoscale

Mechanical transducers based on nanowires promise revolutionary advances in biological sensing and force microscopy/spectroscopy. A crucial step is the development of simple and non-invasive techniques able to detect displacements with subpicometer sensitivity per unit bandwidth. Here, we design suspended tapered silicon nanowires supporting a range of optical resonances that confine and efficiently scatter light in the visible range. Then, we develop an optical method for efficiently coupling the evanescent field to the regular interference pattern generated by an incoming laser beam and the reflected beam from the substrate underneath the nanowire. This optomechanical coupling is here applied to measure the displacement of 50 nm wide nanowires with sensitivity on the verge of 1 fm/Hz1/2 at room temperature with a simple laser interferometry set-up. This method opens the door to the measurement of the Brownian motion of ultrashort nanowires for the detection of single biomolecular recognition events in liquids, and single molecule spectroscopy in vacuum.

Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots

The origin of the modified optical properties of InAs/GaAs quantum dots (QD) capped with a thin GaAs1−xSbx layer is analyzed in terms of the band structure. To do so, the size, shape, and composition of the QDs and capping layer are determined through cross-sectional scanning tunnelling microscopy and used as input parameters in an 8 × 8 k·p model. As the Sb content is increased, there are two competing effects determining carrier confinement and the oscillator strength: the increased QD height and reduced strain on one side and the reduced QD-capping layer valence band offset on the other. Nevertheless, the observed evolution of the photoluminescence (PL) intensity with Sb cannot be explained in terms of the oscillator strength between ground states, which decreases dramatically for Sb > 16%, where the band alignment becomes type II with the hole wavefunction localized outside the QD in the capping layer. Contrary to this behaviour, the PL intensity in the type II QDs is similar (at 15 K) or even larger ...

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

Strain Balanced Epitaxial Stacks of Quantum Dots and Quantum Posts

Tesis doctoral inedita. Universidad Autonoma de Madrid, Facultad de Ciencias. (Departamento de Fisica de la Materia Condensada). Fecha de lectura: 11-11-2011

Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology

External control over the electron and hole wavefunctions geometry and topology is investigated in a p-i-n diode embedding a dot-in-a-well InAs/GaAsSb quantum structure with type II band alignment. We find highly tunable exciton dipole moments and largely decoupled exciton recombination and ionization dynamics. We also predicted a bias regime where the hole wavefunction topology changes continuously from quantum dot-like to quantum ring-like as a function of the external bias. All these properties have great potential in advanced electro-optical applications and in the investigation of fundamental spin-orbit phenomena.

Optical back-action in silicon nanowire resonators: bolometric versus radiation pressure effects

We study optical back-action effects associated with confined electromagnetic modes in silicon nanowire resonators interacting with a laser beam used for interferometric read-out of the nanowire vibrations. Our analysis describes the resonance frequency shift produced in the nanowires by two different mechanisms: the temperature dependence of the nanowires Youngs modulus and the effect of radiation pressure. We find different regimes in which each effect dominates depending on the nanowire morphology and dimensions, resulting in either positive or negative frequency shifts. Our results also show that in some cases bolometric and radiation pressure effects can have opposite contributions so that their overall effect is greatly reduced. We conclude that Si nanowire resonators can be engineered for harnessing back-action effects for either optimizing frequency stability or exploiting dynamic phenomena such as parametric amplification.

Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires

The Purcell effect dependence on the excitation power is studied in photonic crystal microcavity lasers embedding InAs/InP quantum wires. In the case of non-lasing modes, the Purcell effect has low dependence on the optical pumping, attributable to an exciton dynamics combining free and localized excitons. In the case of lasing modes, the influence of the stimulated emission makes ambiguous the determination of the Purcell factor. We have found that this ambiguity can be avoided by measuring the dependence of the decay time on the excitation power. These results provide insights in the determination of the Purcell factor in microcavity lasers.

Absorption features of the zero frequency mode in an ultra-thin slab

The optical absorption in a homogeneous and non-dispersive slab is governed by the well-known Fabry-Perot resonances. We have found that below the lowest order Fabry-Perot resonance, there is another absorption maximum due to the zero frequency mode whose peak frequency is given not by the real part of the complex resonance frequency, as it is the case for all other resonances, but by the imaginary part. This result is of interest, among other applications, for ultra thin solar cells, as tuning the zero frequency mode peak with the maximum of solar irradiance results in an increased efficiency.

Broadband antireflective nano-cones for tandem solar cells

Broadband solar cell antireflection coatings made of nano-cones are studied in square lattices of ZnS, TiO(2) and Si(3)N(4). In the best case, the spectrally integrated transmittance (accounting for both reflection and dielectric absorption losses) for direct solar radiation is 99 %, which represents a four-fold decrease in transmission losses in comparison to a standard antireflective coating bilayer. The dependence of the transmission as a function of nanostructure dimensions is studied, showing a wide maximum, thus leading to a high tolerance for manufacturing errors. This high transmittance is also robust against deviations from normal incidence. Our analysis suggests that the high transmittance is due not only to an effective gradual index effect, but is also due to light coupling to quasiguided modes in the photonic crystal leaking mostly towards the substrate.

Light-trapping in photon enhanced thermionic emitters.

A series of photonic crystal structures are optimized for a photon enhanced thermionic emitter. With realistic parameter values to describe a p-type GaAs device we find an efficiency above 10%. The light-trapping structures increases the performance by 2% over an optimal bilayer anti-reflective coating. We find a device efficiency very close to the case of a Lambertian absorber, but below its maximum performance. To prevent an efficiency below 10% the vacuum gap must be dimensioned according to the concentration factor of the solar irradiance.